Photoluminescent Arrays of Nanopatterned Monolayer MoS2

Monolayer 2D MoS₂ grown by chemical vapor deposition is nanopatterned into nanodots, nanorods, and hexagonal nanomesh using block copolymer (BCP) lithography. The detailed atomic structure and nanoscale geometry of the nanopatterned MoS₂ show features down to 4 nm with nonfaceted etching profiles defined by the BCP mask. Atomic resolution annular dark field scanning transmission electron microscopy reveals the nanopatterned MoS₂ has minimal large‐scale crystalline defects and enables the edge density to be measured for each nanoscale pattern geometry. Photoluminescence spectroscopy of nanodots, nanorods, and nanomesh areas shows strain‐dependent spectral shifts up to 15 nm, as well as reduction in the PL efficiency as the edge density increases. Raman spectroscopy shows mode stiffening, confirming the release of strain when it is nanopatterned by BCP lithography. These results show that small nanodots (≈19 nm) of MoS₂ 2D monolayers still exhibit strong direct band gap photoluminescence (PL), but have PL quenching compared to pristine material from the edge states. This information provides important insights into the structure–PL property correlations of sub‐20 nm MoS₂ structures that have potential in future applications of 2D electronics, optoelectronics, and photonics.     

应变硅结构的高分辨X射线衍射及其图谱分析

运用高分辨X射线双晶衍射(DCD)、三轴晶衍射(TAD)和TAD图谱对绝缘体上Si/SiGe/Si异质结构进行表征.利用TAD结合DCD(TAD-DCD)对称和非对称衍射测定了体Si衬底和外延层以及外延层之间的取向关系、SiGe外延层的Ge含量及其弛豫度等异质外延生长的重要参数.TAD倒易空间图谱能够给出全面的晶体结构信息.高分辨率TAD倒易空间图谱可实现对应变Si层应变量的测定.     

网络安全事件的关联分析方法的比较研究

随着当前攻击手段和技术的日益复杂化,一次入侵事件往往需要多个步骤才能完成,这些步骤都是彼此相关的。但是传统的入侵检测集中于检测底层的入侵或异常,所检测到的结果也仅仅是一次完整入侵的一部分,所以不能将不同的报警结合起来以发现入侵的逻辑步骤或者入侵背后的攻击策略。关联分析技术将不同分析器上产生的报警进行融合与关联分析,极大地减少了报警的数量,降低了入侵检测的误报率,并且适当的减少了入侵检测的漏报率。文中在对网络安全事件关联分析方法的系统结构进行分析后,着重介绍了当前比较流行的几种网络安全事件关联分析方法,最后对各种方法进行了比较研究。     

基于热敏电阻的数字体温计

利用MSP430系列单片机集成的段式液晶驱动模块和16位Σ-Δ模数转换器,结合高温度系数的NTC热敏电阻,设计了一种高精度低功耗便携式数字体温计。详细介绍了该系统原理框架,NTC热敏电阻特性,AD温度采样原理,16位Σ-Δ模数转换器和软件的实现。在实际应用中以高精度、低功耗、测量时间短、方便携带等优点替代传统的水银体温计。     

Electrical characteristics of low temperature-Al0.3Ga0.7As

In this work, we present electrical characterizations of n⁺ GaAs/low temperature (LT)-Al_0.3Ga_0.7As/n⁺ GaAs resistor structures in which the LT layers are grown at nominal substrate temperatures of 250 and 300°C. The resistivity and V_tfl parameters of these LT-Al_0.3Ga_0.7As layers are compared with those of LT-GaAs and Al_0.3Ga_0.7As grown at a normal growth temperature of 720°C. Low-temperature Al_0.3Ga_0.7As layers exhibit resistivities as high as 10¹² ohm-cm, nearly four orders of magnitude higher than that of LT-GaAs, and V_tfl values as high as 45 V, over twice that of LT-GaAs. We also find that the LT-Al_0.3Ga_0.7As materials grown at 250 and 300°C appear to show opposite and contradictory trends with respect to resistivity and V_tfl. We propose that this result can be explained by residual hopping conduction in the 250°C material. Temperature dependent conductivity measurements confirm the presence of a hopping mechanism in LT-Al_0.3Ga_0.7As grown at 250°C and yield activation energies of 0.77 and 0.95 eV for LT-GaAs and LT-Al_0.3Ga_0.7As, respectively.     

环形孔径对部分相干光光谱的影响

本文推导了部分相干光在经过环形孔径之后,远场轴上点的光谱S(ω)与环形孔径处光的光谱S~(0)(ω)之间的关系。数值计算结果表明,S(ω)不仅依赖于S~(0)(ω),而且还与环形孔径处光的相干性以及环形孔径的参数有关。     

人工神经网络处理光纤阵列传感信号的原理,结构及其仿真结果

人工神经网络技术作为机敏材料与结构的关键技术之一，在国外已受到人们的关注。本文探索将人工神经网络技术应用于光纤阵列传感信号处理中的原理、结构及应用于材料与结构损伤估计的方法。给出了适应于此，已用程序实现的两种神经网络模型的仿真处理结果。     

Recessed-gate AlGaAs-InGaAs-GaAs pseudomorphic HEMT withSi-planar-doped etch stop layer

An improved slot etch technique based on an Si planar doped layer has been applied to gate recessing in the fabrication of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (HEMTs). The devices exhibited comparable g_m with much better breakdown and leakage behaviour than conventional pseudomorphic HEMT devices     

Design optimization of ARROW-type diode lasers

Antiresonant reflecting optical wavelength (ARROW)-type diode lasers have been optimized for high-power, single-spatial-mode operation. Calculated modal behavior predicts strong intermodal discrimination with low loss for the fundamental ARROW mode. Single-lobe far-field operation is obtained only when the high-index reflecting (antiresonant) cladding layers correspond to an optical thickness of λ₁ (m+3/4), where λ is the lateral (projected) wavelength of the leaky wave in the high-index layers, and m is an integer (m=0, 1,. . .). Experimental results include stable, single-spatial mode operation to 500-mW peak pulsed power and 300-mW CW power at an emission wavelength of 0.98 μm     

光泵用大功率半导体激光器列阵

本文报导工作波长适合于泵浦掺Nd固体激光器的GaAIAs/G&As激光锁相列阵。采用氧化物掩蔽和Zn扩散条形结构工艺,获得了十单元列阵器件。其工作波长为809±5nm,输出功率大于200mW。已用于Nd∶YAG和Nd玻璃激光器的泵浦。