89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

Characterization of charge trapping in submicrometer NMOSFET's bygate capacitance measurements

Trapping of net positive charge at low gate stress voltage, and of net negative charge at high gate stress voltage, is observed through changes in the gate-to-drain capacitance of the stressed junction. These observations can be explained in terms of electron trapping, hole trapping, and generation of acceptor-like interface states located in the upper half of the bandgap. Channel shortening is also observed and found to exhibit a logarithmic time dependence     

A neural network compensator for uncertainties of roboticsmanipulators

A neural network controller for trajectory control of robotic manipulators that is used not to internalize the inverse dynamic model of the controlled object but to compensate only the uncertainties of the robotic manipulator is presented. Its performance is compared with that of the conventional adaptive scheme. The results show the ability of the neural network controller to adapt to unstructured effects. A learning method for the neural network compensator with true teaching signals is shown. The tracking error of the robotic manipulator was greatly reduced when this controller was used     

Morphology of thin anatase coatings prepared from alkoxide solutions containing organic polymer,affecting the photocatalytic decomposition of aqueous acetic acid

Porous anatase coatings were prepared from alkoxide solutions containing organic polymer by a dip-coating technique. The morphology of the coatings, such as pore size, pore distribution and thickness, was controlled. The effects of the morphology of the porous anatase coatings on the photocatalytic activity for the photocatalytic decomposition of aqueous acetic acid were examined.     

Dynamic Bending Strains in Planar Trusses with Pinned or Rigid Joints

The method of reverberation ray matrix is applied to analyze the dynamic behavior of structural members in trusses with pinned joints subjected to suddenly applied force. The results are compared with those in planar trusses with rigid joints. Detailed calculations are made with two types of trusses, a small laboratory model made of slender aluminum bars, and a hypothetical real size Pratt truss made of structural steel. It is found that the maximum dynamic bending strains in the members of both types of trusses are very large, comparable with the dynamic axial strains in the same member. The magnitudes of bending strains in the pinned truss differs little from those in the truss with rigid joints for both types of trusses. Such a large dynamic bending strain in a structure member, which is contradictory to the static behavior of the same truss, could be caused by the inertial force of the mass in structural members of the truss.     

Hydrogen absorption by Pd-coated ZrNi prepared by using Barrel-Sputtering System

To improve the durability of hydrogen storage materials against surface poisoning by impurity gases, effectiveness of Pd-coating layer prepared by using a Barrel-Sputtering System was examined for ZrNi powder. The effectiveness of Pd-coating was evaluated by activation temperature, at which Pd/ZrNi poisoned by air could be activated to absorb hydrogen. Characterization of Pd-coated ZrNi (denoted as Pd/ZrNi) by scanning electron microscopy, electron probe microanalysis and X-ray diffraction showed that a uniform Pd-coating layer was formed with the barrel-sputtering system. It was found that the poisoned Pd/ZrNi sample could be activated even at 423 K to absorb hydrogen at room temperature. This exhibits remarkable contrast to bare ZrNi, which could be only activated appreciably above 1073 K. It is concluded that the Pd-coating by barrel sputtering is quite effective to avoid the effect of surface poisoning of powdery hydrogen storage materials. However, the activation at excessively high temperature resulted in the loss of high activity to absorb hydrogen. It was concluded that this phenomenon was associated with reactions between Pd and ZrNi to form PdZr and other byproducts.     

The material properties of sulphonated phenolic resin reinforced cement mortars

The material properties of new sulphonated phenolic resin (SP) reinforced cement mortars have been investigated. SP was found to promote the dispersion of cement particles and to interact with Ca(OH)₂. As a result, the resulting mortars exhibit better workability, more compact structure and higher compressive strength than plain mortars. The mortar with 1 wt% SP present after 28 days curing exhibits a compressive strength of 66MPa, which is about 18% higher than that of plain mortar.     

Computer processing of artifact and arrhythmias in heart rate variability analysis.

Analysis of heart rate variability (HRV) with Holter monitoring is often difficult due to excessive artifacts and arrhythmias. While short sudden surges are treated successfully by most methods, slow heart rate (HR) variations, nocturnal trapezoidally-shaped HR increases and special types of arrhythmias which are similar to normal HRV fluctuations may distort further time domain and spectral analysis. This paper examines the advantages and disadvantages of different methods for preprocessing of HR data. We have developed the following approach to the analysis of HRV. (1) A combination method based on the absolute difference between HR values and both the last normal HR value and an updated mean is used for removal of artifacts and arrhythmias. This method can detect both sudden surges in HR values as well as longer periods of noise combined with slow normal variations. An additional stage of wild point removal is then optionally applied. (2) Certain special problems such as large T-waves, bigeminal rhythm, slow HR variations and nocturnal trapezoidally-shaped HR increases are also identified. Although none of the algorithms can be applied successfully to all cases, the final computer analysis for preprocessing described in the present study has proved to be superior to the simplified methods which are usually used and provides more suitable data for HRV analysis.     

A hybrid wafer-dicing process for GaAs MMIC production

A dicing process for GaAs MMIC (monolithic microwave integrated circuit) wafers using spin-on wax for wafer mounting and a hybrid process of wet chemical etching/mechanical sawing for chip dicing is described. This process minimizes ragged chip edges and reduces generation of microcracks in addition to the elimination of the plated gold burrs on the backside of the diced MMIC chips. This process gives a uniformity of -3 μm across a 2-in wafer following the completion of the whole backside process. This GaAs chip dicing technique is amenable to production because it exhibits both a very high chip yield (>90%) and nearly flawless edges     

Development of a distributed sensing technique using Brillouinscattering

This paper reviews the developments of a distributed strain and temperature sensing technique that uses Brillouin scattering in single-mode optical fibers. This technique is based on strain- and temperature-induced changes in the Brillouin frequency shift. Several approaches for measuring the weak Brillouin line are compared