Threshold sensitivity of anti-Stokes frequency converter

Expressions describing the threshold sensitivity of a quantum converter of IR radiation into visible light are obtained for two schemes of energy levels in the active atoms. Based on these expressions, practical criteria for the creation of such devices are formulated.     

Fodor and Pylyshyn on connectionism

Fodor and Pylyshyn (1988) have argued that the cognitive architecture is not Connectionist. Their argument takes the following form: (1) the cognitive architecture is Classical; (2) Classicalism and Connectionism are incompatible; (3) therefore the cognitive architecture is not Connectionist. In this essay I argue that Fodor and Pylyshyn's defenses of (1) and (2) are inadequate. Their argument for (1), based on their claim that Classicalism best explains the systematicity of cognitive capacities, is an invalid instance of inference to the best explanation. And their argument for (2) turns out to be question-begging. The upshot is that, while Fodor and Pylyshyn have presented Connectionists with the important empirical challenge of explaining systematicity, they have failed to provide sufficient reason for inferring that the cognitive architecture is Classical and not Connectionist.     

The aligned Si nanowires growth using MW plasma enhanced CVD

New and simple modification of vapor-liquid-solid process for Si nanowires growth based on microwave plasma enhanced chemical vapor deposition that uses solid-state Si target as a source of Si atoms was developed. The method was temperature and pressure controlled evaporation of solid phase of Si source in hydrogen microwave plasma. Aligned growth of Si nanowires was performed in local electric field by applying of constant negative bias to substrate holder. Deposited Si nanowires were studied by scanning electron microscopy (SEM), Raman and photoluminescence spectroscopy. Correlation between photoluminescence spectra and Si nanowires properties were studied.     

Calculation of the standard heat capacities of crystalline oxides in the Fe-O-Ti system

Our earlier experimental studies of the solid-phase reduction of disseminated lump ores demonstrate that an oxide lattice transforms into a metal lattice via the saturation of the oxide crystal lattice by charged oxygen vacancies. Low-charge metal cations appear in the oxide crystal lattice, and they are related to oxygen vacancies by the condition of local electrical neutrality. As oxygen vacancies are accumulated (i.e., during reduction), the number of oxygen vacancy-low charge cation complexes in the initial oxide increases. The total composition of the oxide phase in the range of a crystal lattice of a certain type changes continuously from the initial oxide to the end product of reduction, i.e., to the lower oxide or a metal. Therefore, it is necessary to determine the thermal characteristics of not only all possible stoichiometric compounds in the M-O system but also MO_x oxides of variable compositions. Equations for calculating the standard heat capacities of complex stoichiometric oxides and oxides of variable compositions in the Fe-O-Ti system are derived using a mathematical model developed earlier, and these characteristics are calculated.     

Synthesis of minerals using alternative energy sources

A technology for the synthesis of synthetic minerals (using the example of spinels) using a low-temperature plasma flame is developed. The diagnostic properties of spinels are identified.     

Low temperature and strain rate dependence of fracture stress and fracture toughness on thin Fe40Ni40B20 amorphous ribbon

The fracture stress and the critical stress intensity factor of the Fe₄₀Ni₄₀B₂₀ amorphous metallic ribbons 20 μm thick were measured in the temperature range 4.2–300 K and at deformation rates from 3.3×10⁻⁶ to 1.25×10⁻³ m⁻¹ with the aim to obtain more information on the condition for the onset and development of the inhomogeneous plastic deformation and fracture.     

Simple approach to analysis of switched-capacitor circuits with nonideal op-amps

A possible method for the simulation of nonideal op-amps with a finite gain and bandwidth by means of an equivalent SC circuit, containing ideal components, is presented. The approach is extended by the case of an op-amp with non-switched input SC building blocks.