Ab<Emphasis Type="Italic"> initio</Emphasis> investigation of boron diffusion paths in germanium

Boron is observed to diffuse very slowly in germanium, as opposed to its behaviour in silicon where it exhibits Transient Enhanced Diffusion effects in implanted samples. As a result of this slow diffusion, boron is a very stable dopant, allowing devices to be created with very well-defined doping regions. To understand this superior performance, calculations were performed on a variety of boron diffusion paths, within vacancy and interstitial mediated methods. It was found that the vacancy mediated diffusion which is associated with the fast diffusion of many other species in germanium exhibits a total barrier of 5.8 eV. Interstitial-mediated diffusion had a total barrier for migration of 3.4 eV in the neutral and singly negative charge states, 3.2 eV for the positive charge state, but a formation barrier of 4.1 eV. Thus the barrier for interstitial-mediated diffusion is dominated by the formation energy of the self-interstitial.     

Trust on a Nationwide Scale

Singapore is a small island nation with roughly 4.5 million inhabitants, but it has a highly developed international economy based on trade, services, and knowledge management. Singapore launched its lofty goals by defining the nationpsilas e-security. Current research in the Singaporean telecommunications and IT security community attempts to model such peer-to-peer ad hoc transactions and leverage the existing standard infrastructure described in this article.     

The stiffness matrix in elastically articulated rigid-body systems

Discussed in this paper is the Cartesian stiffness matrix, which recently has received special attention within the robotics research community. Stiffness is a fundamental concept in mechanics; its representation in mechanical systems whose potential energy is describable by a finite set of generalized coordinates takes the form of a square matrix that is known to be, moreover, symmetric and positive-definite or, at least, semi-definite. We attempt to elucidate in this paper the notion of “asymmetric stiffness matrices”. In doing so, we show that to qualify for a stiffness matrix, the matrix should be symmetric and either positive semi-definite or positive-definite. We derive the conditions under which a matrix mapping small-amplitude displacement screws into elastic wrenches fails to be symmetric. From the discussion, it should be apparent that the asymmetric matrix thus derived cannot be, properly speaking, a stiffness matrix. The concept is illustrated with an example.     

Multiphysics modeling and optimization of mechatronic multibody systems

Modeling mechatronic multibody systems requires the same type of methodology as for designing and prototyping mechatronic devices: a unified and integrated engineering approach. Various formulations are currently proposed to deal with multiphysics modeling, e.g., graph theories, equational approaches, co-simulation techniques. Recent works have pointed out their relative advantages and drawbacks, depending on the application to deal with: model size, model complexity, degree of coupling, frequency range, etc. This paper is the result of a close collaboration between three laboratories, and aims at showing that for “non-academic” mechatronic applications (i.e., issuing from real industrial issues), multibody dynamics formulations can be generalized to mechatronic systems, for the model generation as well as for the numerical analysis phases. Model portability being also an important aspect of the work, they must be easily interfaced with control design and optimization programs. A global “demonstrator”, based on an industrial case, is discussed: multiphysics modeling and mathematical optimization are carried out to illustrate the consistency and the efficiency of the proposed approaches.     

Intermediate order in tetrahedrally coordinated silicon: evidence for chainlike objects

In this report, we describe the nature of intermediate order in silicon as determined by recent measurements on thin films using transmission electron microscopy (TEM) and Raman scattering. The TEM images show in addition to the expected continuous random network (CRN), the presence of highly ordered quasi-one-dimensional “chain-like objects” (CLO's) that are 1–2 nm wide and tens of nm long that meander and show some evidence of cross-linking with each other. The presence of these objects correlate to a Raman feature centered at 490 cm⁻¹ whose width is 35–40 cm⁻¹, and is used to quantify the heterogeneity in terms of the CLO and CRN (=475 cm⁻¹ scattering) concentrations. The 490 and 35 cm⁻¹ values are consistent with bond angle deviations approaching 0°, and thus reinforces an association with the CLOs. We find that in reference quality a-Si:H (made using pure SiH₄), the CLO concentration is about 5 vol%, while in state-of-the-art material using high H₂ levels of dilution during processing, it increases to about 15%. Increased stability of such material to light-soaking is thus not mediated by a direct volumetric replacement of poor with high-quality components. Rather, an important characteristic of intermediate order in silicon is the low-dimensional aspect of its order, which allows it to influence more total volume than which it is itself composed. Consistent with these and other recent findings, we propose a tensegrity model of amorphous silicon.     

Etching behavior of CVD zinc selenide in inorganic acid solutions

Chemical interaction between polished surfaces of polycrystalline zinc selenide and inorganic acid solutions of various concentrations has been studied.     

Electromagnetic wave reflection from Fe/Cr nanostructures

The reflection of electromagnetic waves in the millimeter wave band from Fe/Cr nanostructures has been studied. It is established that the giant magnetoresistance (GMR) in the nanostructure leads to an increase in the reflection and a decrease in the transmission of microwaves, while the magnetic resonance leads to a decrease in both the reflection and transmission coefficients.     

High-temperature oxidation of intermetallics formed by group IV transition metals with chromium

We have studied the oxidation resistance of chromium intermetallics: TiCr₂, HfCr₂, and ZrCr₂, in the temperature interval 873–1473 K with isothermal holding of the specimens for up to 20 h. We have shown that the intermetallics TiCr₂ and HfCr₂ are oxidized 2–3 times more slowly than pure titanium and hafnium, but more than 1–2 orders of magnitude faster than chromium at T≤1273 K and 4–6 times faster at 1473 K. In this temperature interval, the intermetallic ZrCr₂ is rapidly oxidized at an increasing rate as the heating temperature rises. The scaling resistance of intermetallics of Group IV d metals with chromium is determined by formation of scales in which the major role is played by the oxides TiO₂, HfO₂, and ZrO₂, with weak protective properties.     

Express Method for Estimation of Tensile Strength and Crack Resistance of Brittle Media

The procedure is proposed for estimating the crack resistance and tensile strength of rocks by the results of experiments on disk samples with holes. The gradient approach to the strength problem is employed in processing the experimental data.     

Simulation of the Accelerating Systems of Cyclotrons for Applications

The results of a comparative numerical investigation of three types of resonator systems of a cyclotron for acceleration of negative hydrogen and deuterium ions up to maximum energy 30 and 15 MeV, respectively, are presented. It is shown that a vertical system with two half-wave resonators excited in-phase has the smallest active losses and the smallest differential of the amplitude of the accelerating voltage along the edge of the dees and is effective for accelerating particles at dual working frequencies.