A Low-Supply-Voltage CMOS Sub-Bandgap Reference

A low-power (21 $muhbox{W}$ ) bandgap reference source that is operable from a nominal supply voltage of 1.4 V is described. The circuit provides an output voltage equal to the bandgap voltage having a low output resistance and allows resistive loading. It does not use resistors or operational amplifiers. Thus, the design is suitable for fabrication in any digital CMOS technology. The circuit uses a current conveyor and current mirrors to convert the proportional to absolute temperature voltage into a current using a MOSFET. The current is converted back to a voltage by using the functional inverse of the FET $v-i$ characteristics. This makes the voltage gain linear and temperature independent. The absence of back-gate bias is the reason for achieving the low supply voltage of operation. Simulation results using the transistor models for the 0.18-$mu$m TSMC process show that the voltage-variation over the temperature range 0 to 100 $^{circ} {hbox {C}}$ is $≪$1 mV.      

Noise–Power Optimization of Incremental Data Converters

Incremental data converters (IDCs) are useful in instrumentation and measurement applications, where low-frequency analog signals need to be converted into digital form with high accuracy and low power dissipation. They are particularly well suited for applications where a single analog-digital converter is multiplexed between many channels. This paper proposes an exact design methodology for IDCs, which optimizes the signal-to-noise ratio of the converter under practical design constraints. The process also allows the designer to apportion the noise budget in an arbitrary manner between thermal and quantization noise. The design process is illustrated by an example which describes the optimization of a third-order multiplexed IDC.     

Efficient digitization of compound analog signals

The problems related to digitization of sonar compound analog sounding signals reflected from a target are considered. With the use of mathematical simulation, it is shown that, in the case of the most efficient Kotel’nikov digitization, errors occur that impede correct correlation signal processing. This difficulty can be overcome via a reduction of the sampling interval by a factor of 2 to 4 relative to the interval proposed by Kotel’nikov.     

Bistable amphoteric centers in semiconductors

It is shown that, at thermodynamic equilibrium, the release of charge carriers from the localized states of bistable amphoteric centers into quasi-free states depends on the degree of compensation. This brings about different functional dependences of the concentration of free charge carriers on temperature. It is found that, in uncompensated semiconductors, the concentration of free charge carriers follows the same dependence in the case of bistable amphoteric centers and bistable amphoteric U ^? centers, although the distributions of charge carriers over the charge states and configurations are different for these types of centers. The results can be used for interpreting various experimental data insufficiently explained in the context of the traditional approach.     

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.     

Novel electro-optic properties of epitaxially grown (Pb, La)(Zr, Ti)O3 (PLZT) thin films derived by advanced sol–gel methods

Advanced sol–gel methods using a secondary solvent addition into (Pb, La)(Zr, Ti)O₃ (PLZT) sol–gel solution and a methanol pre-treatment of sapphire substrates are demonstrated. For the secondary solvent addition, the additive affected the crystallinity and electro-optic (EO) property of PLZT films and only methanol addition can improve them. In addition, the methanol pre-treatment is also appeared to be effective to improve film characteristics.

Through these optimizations, epitaxially grown PLZT thin films on r-cut sapphire are obtained and a high Pockels coefficient which is comparable to those of bulk PLZTs is achieved. It is believed that these PLZT thin films are applicable for integrated EO devices and open the door for the future data communication systems.     

Photo-Fenton removal of water-soluble polymers

This paper presents the results of experiments carried out in a laboratory-scale photochemical reactor on the photodegradation of different polymers in aqueous solutions by the photo-Fenton process. Solutions of three polymers, polyethyleneglicol (PEG), polyacrylamide (PAM), and polyvinylpyrrolidone (PVP), were tested under different conditions. The reaction progress was evaluated by sampling and analyzing the total organic carbon concentration in solution (TOC) along the reaction time. The behavior of the different polymers is discussed, based on the evolution of the TOC–time curves. Under specific reaction conditions, the formation and coalescence of solid particles was visually observed. Solids formation occurred simultaneously to a sharp decrease in the TOC of the liquid phase. This may be favorable for the treatment of industrial wastewater containing polymers, since the photodegradation process can be coupled with solid separation systems, which may reduce the treatment cost.     

Prices are macro-observables! Stylized facts from evolutionary finance

Prices are macro-observables of a financial market that result from the trading actions of a huge number of individual investors. Major stylized facts of empirical asset returns concern (i) non-Gaussian distribution of empirical asset returns and (ii) volatility clustering, i.e., the slow decay of auto- correlations of absolute returns. We propose a model for the aggregate dynamics of the market which is generated by the coupling of a ‘slow’ and a ‘fast’ dynamical component, where the ‘fast’ component can be seen as a perturbation of the ‘slow’ one. Statistical properties of price changes in this model are estimated by simulation; sample size is 4 × 10⁶. It is shown that increasing the decoupling of these two dynamical levels generates a crossover in the distribution of log returns from a concave Gaussian-like distribution to a convex, truncated Levy-like one. For a sufficiently large degree of dynamic decoupling, the return trails exhibit pronounced volatility clustering.     

Removal of As(V) Ions from Solution by Akaganeite bgr-FeO(OH) Nanocrystals

The original method is developed for producing the new inorganic sorption material of akaganeite bgr-FeO(OH). The material in question is characterized relative to arsenic contained in aqua. The possibility is established for removing arsenate ions from water by contemporary physicochemical methods.