南化大化肥硝铵库屋面施工防渗漏措施

南化大化肥硝铵库工程 ,于 2 0 0 0年 2月 15日开工 ,2 0 0 0年 10月 10日竣工 ,混凝土杯形基础 ,主体结构为单层、单跨、装配式的排架结构 ,30ｍ预应力折线形屋架 ,大型屋面板 ,氯化聚乙烯防水卷材 ,建筑面积为 162 0ｍ2 。氯化聚乙烯防水卷材是防水新型材料 ,由于防水性能好 ,施工方便 ,近几年得到了广泛的应用 ,在实际操作中往往由于施工人员对操作规程不甚了解 ,或虽有所了解 ,但没有认真对待 ,造成这样那样的质量问题 ,硝铵库作为一个储物库房 ,对防渗漏的要求高 ,那么施工中怎样避免出现渗漏现象 ,确保工程质量呢 ?1　做好施工准备检…     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

Reduction of laser chirp in 1.5 ?m DFB lasers by modulation pulse shaping

The dynamic linewidth of 1.5 ?m ridge waveguide DFB lasers is shown to be reduced by shaping the pulse of the laser modulating waveform. Pulse shaping is performed by a second-order network designed to cancel the small-signal laser resonance. Results demonstrate a dynamic linewidth reduction from 1.4 ? to 0.55 ? FWHM for a 500 ps pulse.     

Microprocessor-Based Control of an Ion Beam Deposition System

A microprocessor-based system with 32 A/D, 24 D/A, and 16 ac load controllers, has been designed and built to monitor and control an ion beam thin-film deposition system. The A/D and D/A channels have electrical isolation of 7.5 kV between channels and between input and output. The microprocessor system keeps the ion beam deposition parameters stable for extended periods of operation and it is proposed as a means to greatly simplify switching from one deposition species to another to grow thin multilayer or alloy films.     

A distribution function for double-bit upsets

It is suggested that the chord length distribution method could be useful for predicting double-bit upset rates in certain circumstances. A chord length distribution function for simultaneous path lengths in two parallelepipeds, applicable to a unidirectional flux, is derived. A proof of the system is outlined for the case under consideration     

Magnetic field dependence of shielding current density in Y-Ba-Cu-O rings at 77 K

A method for contactless measurement of the shielding critical current density and its dependence on the external magnetic field is described and analyzed. The obtained values are compared with those measured resistively on two different samples. It is shown that the shielding critical current densityJ _cs and the intergranular transport current densityJ _cr are identical if the measurement conditions are similar. A degradation ofJ _cs measured in the external field with AC ripple has been observed.     

Analysis of a stiffener intersection eccentricity in a steel containment

Containment structures have several regions in which the continuity of the cylindrical pressure boundary is interrupted, e.g., shell penetrations, discontinuous stiffeners, and changes in the shell thickness. Significant strain concentrations can occur in these areas of discontinuity. The Sandia National Laboratories 1:8-scale steel containment equipment hatch was analyzed as an example of an eccentricity at a stiffener intersection.A portion of the as-built 1:8-scale model was modeled with the ANSYS general purpose finite element program using triangular, thin shell finite elements. The overall size of the model was determined from Saint-Venant type considerations of the stress field around the hatch. Shell elements were used to model the ring and formed stiffeners. Geometric and material nonlinear behavior were included. The model was loaded using discrete load steps up to a pressure of 165 psig. At this pressure, the maximum strain was 19.7 percent in the formed stiffener near its intersection with the ring stiffener. The finite element solution demonstrated the very localized nature of the strain field near the ring/formed stiffener intersection.In an attempt to reduce analysis costs, a small portion of the 1:8-scale model immediately surrounding the ring/formed stiffener intersection was selected for further analysis. Two smaller models, a ring/formed stiffener intersection and a ring/circular stiffener intersection, were studied. The models were significantly smaller than the regions used previously. A comparison of the two intersection models showed that the circular stiffener is a more efficient configuration.     

Special numbers,still proceedings,other novelties

Modifications of solid water and their transitions are described as they relate to cryo electron microscopy. In particular, the various amorphous states (amorphous polymorphs) as they exist below 100 K are extensively investigated. The “high-density” midification exhibits a lower viscosity than the “low-density” form. Differences are also observed in the mechanism of void formation due to electron irradiation: in the high-density form, voids are formed — not, however, in the low-density form. Together with the reaction to radiation damage, the physical properties of amorphous solid water are discussed with respect to embedding of organic specimens. Finally, the conditions and pitfalls associated with preparation of thin and entirely vitrified ice layers by shock-freezing are described.