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191.
This paper proposes a new computer algorithm to solve the fuzzy relation equation P/spl ogr/Q=R, where /spl ogr/ denotes max-min composition or max-product composition. This algorithm operates systematically and graphically on a matrix pattern to get all the solutions of P. Furthermore, by using MATLAB software 6.0, the algorithm is implemented in a computer program attached in the appendix of this paper. Two examples are given to illustrate the effectiveness of the proposed algorithm. 相似文献
192.
Rajoo R. Lim S.S. Wong E.H. Hnin W.Y. Seah S.K.W. Tay A.A.O. Iyer M. Tummala R.R. 《Advanced Packaging, IEEE Transactions on》2008,31(2):377-385
A wafer level packaging technique has been developed with an inherent advantage of good solder joint co-planarity suitable for wafer level testing. A suitable weak metallization scheme has also been established for the detachment process. During the fabrication process, the compliancy of the solder joint is enhanced through stretching to achieve a small shape factor. Thermal cycling reliability of these hourglass-shaped, stretch solder interconnections has been found to be considerably better than that of the conventional spherical-shaped solder bumps. 相似文献
193.
Zhiping Lin Xu L. Bose N.K. 《IEEE transactions on circuits and systems. I, Regular papers》2008,55(1):445-461
194.
Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs 总被引:1,自引:0,他引:1
Chung-Hsun Jang Sheu J.K. Tsai C.M. Shei S.C. Lai W.C. Chang S.J. 《Photonics Technology Letters, IEEE》2008,20(13):1142-1144
The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same. 相似文献
195.
In this paper, we analyze in some detail the manifold-mapping optimization technique introduced recently [Echeverría and Hemker in space mapping and defect correction. Comput Methods Appl Math 5(2): 107—136, 2005]. Manifold mapping aims at accelerating optimal design procedures that otherwise require many evaluations of time-expensive cost functions. We give a proof of convergence for the manifold-mapping iteration. By means of two simple optimization problems we illustrate the convergence results derived. Finally, the performances of several variants of the method are compared for some design problems from electromagnetics. 相似文献
196.
197.
Embedded computing moved beyond toasters quite some time ago, but there are still misconceptions about what embedded computers do. Some of those misconceptions come from an old-fashioned view of what a computer is. 相似文献
198.
199.
介绍液态软起动技术在济钢 15000 m3/h制氧机配套的 6000 kW同步电动机上的应用情况,阐述了系统的原理、特点、仿真计算及实际应用后达到的效果. 相似文献
200.