Improving antibacterial,biocompatible, and reusable properties of polyvinyl chloride via the addition of aluminum alkoxides

Global bacterial infections associated with conventional polyvinyl chloride (PVC) medical devices place a heavy burden on healthcare systems and thus it will be desirable if medical devices are made from antimicrobial PVC. There are numerous studies focusing on polymer surface modifications to either leach antimicrobial agents or kill pathogenic microbes upon direct contact. In this work, mannitol fumarate ester-based aluminum metal alkoxide (MFE-Al) additive was developed to confer simultaneously improved antibacterial property and enhanced high temperature sterilization resistance of the resultant PVC. Data obtained confirm that the MFE-Al stabilized PVC sheets significantly inhibit 98% bacterial growth. They also show biocompatibility with cultured H9C2 cardiomyocytes and hemocompatibility in vitro. Dry heat sterilization is generally not suitable for PVC medical wares due to their poor thermal compatibility. Surprisingly, our antimicrobial-biocompatible PVC can maintain stability at 180°C for 90 min. Such a high thermal stability indicates the MFE-Al stabilized PVC can endure 90 cycles of dry-heat sterilization without significant damage. This study may provide a solution to reduce PVC medical waste for a maximum benefit without compromising human health or the environment.     

Ammonium Accumulation Caused by Reduced Tonoplast V-ATPase Activity in Arabidopsis thaliana

Plant vacuoles are unique compartments that play a critical role in plant growth and development. The vacuolar H⁺-ATPase (V-ATPase), together with the vacuolar H⁺-pyrophosphatase (V-PPase), generates the proton motive force that regulates multiple cell functions and impacts all aspects of plant life. We investigated the effect of V-ATPase activity in the vacuole on plant growth and development. We used an Arabidopsis thaliana (L.) Heynh. double mutant, vha-a2 vha-a3, which lacks two tonoplast-localized isoforms of the membrane-integral V-ATPase subunit VHA-a. The mutant is viable but exhibits impaired growth and leaf chlorosis. Nitrate assimilation led to excessive ammonium accumulation in the shoot and lower nitrogen uptake, which exacerbated growth retardation of vha-a2 vha-a3. Ion homeostasis was disturbed in plants with missing VHA-a2 and VHA-a3 genes, which might be related to limited growth. The reduced growth and excessive ammonium accumulation of the double mutant was alleviated by potassium supplementation. Our results demonstrate that plants lacking the two tonoplast-localized subunits of V-ATPase can be viable, although with defective growth caused by multiple factors, which can be alleviated by adding potassium. This study provided a new insight into the relationship between V-ATPase, growth, and ammonium accumulation, and revealed the role of potassium in mitigating ammonium toxicity.     

Synthesis and xylene isomers adsorption of silicalite-1 crystals with intracrystalline mesopores aided by 3-glycidoxypropyl-trimethoxysilane and polyethene glycol

Journal of Porous Materials - Well-defined silicalite-1 crystals with intracrystalline mesopores were successfully synthesized in the presence of 3-glycidoxypropyl-trimethoxysilane (GPTMS) and...     

配电网故障下的STATCOM运行分析

电网发生故障时,故障电流大,三相功率分配不相等,造成三相相间电压不均衡,影响系统稳定。应用静止同步补偿器（STATCOM）能发出或吸收满足系统要求的有功和无功电流,提高电网运行的安全水平。文章首先分析了故障时电压和电流的各序分量特点,探讨了对称和不对称故障时的系统工作特性。然后通过仿真,设置一个配电网络分别发生单相接地、两相相间短路和三相接地故障时,观察系统的运行情况,进而通过调节STATCOM控制正序基波电流,使STATCOM在故障期间提供一定的有功和无功支持,保持系统电压的稳定,维持系统的安全稳定运行。     

纳米Cr颗粒对Ni-Mo复合镀层性能的影响

为了研究纳米Cr颗粒对Ni-Mo复合镀层性能的影响,采用脉冲电沉积方法制备具有不同Cr含量的Ni-Mo复合镀层.利用扫描电子显微镜和X射线衍射仪分别观察和分析复合镀层的组织形貌及结构.采用电化学测试和X射线光电子能谱研究复合镀层的析氢性能和耐蚀性能.结果表明:随着镀液中纳米Cr颗粒含量的增加,镀层晶粒得到细化,析氢过电位增大,复合镀层析氢性能得到提高;当镀液中纳米Cr颗粒含量为20 g/L时,复合镀层表面钝化膜中MoO₃含量较高,且可与Cr产生协同效应,因而复合镀层具有较好的耐蚀性能;但随着镀液中纳米Cr颗粒含量的进一步增加,复合镀层中沉积的Cr元素含量降低,复合镀层的析氢性能和耐蚀性能均降低.因此,当镀液中纳米Cr颗粒含量为20 g/L时,复合镀层具有较好的析氢性能和耐蚀性能.     

Design of a low temperature coefficient bandgap reference with a wide temperature range

In order to meet the requirements of different applications and markets for the accuracy and reliability of IoT chips,a low temperature coefficient bandgap reference with a wide temperature range is proposed.On the basis of the traditional Banba bandgap reference structure,the circuit utilizes high-order temperature compensation technology and piecewise temperature compensation technology to improve the curvature of the output reference voltage.The temperature coefficient of the circuit is reduced.At the same time,the operating temperature range of the circuit is extended.The circuit performances are verified in the TSMC 180 nm CMOS process.Test results show that the temperature coefficient of the circuit is as low as 7.2×10^-6/℃ in the range of-40 ℃ to 160 ℃.The power supply rejection ratio at a low frequency is -48.52 dB.The static current under the 1.8 V power supply voltage is 68.38 μA,and the core area of the chip is 0.025 mm².     

稀有金属伟晶岩过度冷却与侵位之关系——基于野外地质观察及年代学的思考

稀有金属伟晶岩的结晶过程是认识其成矿作用的重要方面。前人利用冷却模型所推测出的侵入变质围岩的伟晶岩冷却时间为几天至几千年,但对侵位于花岗岩中伟晶岩的结晶过程缺乏相关研究。基于此,对新疆大喀拉苏及镜儿泉地区稀有金属伟晶岩的野外地质观察及年代学研究显示,两处伟晶岩的侵位模式不同,侵位时花岗岩围岩的温度有别。大喀拉苏1号伟晶岩(年龄为(248.4±2.1)～(228.4±0.3)Ma)主要侵位于较冷花岗岩围岩(年龄为(261.4±2.1)Ma)的席理面,边缘可能出现过度冷却。最新铌钽铁矿U-Pb年代学显示,镜儿泉1号锂辉石伟晶岩形成时代为(250.8±1.0)Ma,熔体侵位于温度较高的花岗岩(年龄为(252.9±1.9)Ma)内部断层,其冷却结晶受花岗岩温度及区域地热梯度制约,冷却时间可能超过3 Ma。综上所述,过度冷却模型的适用性、铌钽铁矿U-Pb同位素体系的封闭温度都需要进一步研究,以解释同位素年龄与冷却模型所得结晶时间的显著差异。     

T型三撑杆索穹顶预应力计算方法与参数分析

针对传统索穹顶构造形式单一及环向刚度弱的缺陷,提出一种T型三撑杆索穹顶.采用节点平衡法与求解超静定结构的位移法相结合的方法,推导出T型三撑杆索穹在考虑自重情况下结构初始预应力分布的计算公式;对索穹顶结构进行参数分析,讨论了矢跨比和撑杆高度对结构初始预应力分布的影响,给出了结构在忽略自重的情况下初始预应力计算表,得出了适用于T型三撑杆索穹顶结构的参数合理取值范围.研究表明,T型三撑杆索穹顶结构初始预应力与矢跨比、撑杆高度均成反比,撑杆高度的影响程度更大,该结构适宜矢跨比为1/20～3/20,适宜撑杆高度为斜索角度tan10°～tan20°时的取值.     

基于实验方法的硅胶圆管柔性关节静力学研究

采用两种不同材料的硅胶管和弹性骨架制作了柔性关节,对其进行静力学实验,得出了在相同气压下的弯曲角度和夹持力,并建立了柔性关节形变模型,获得了其气压下的形变特性。研究结果表明: 硅胶胶管邵氏硬度越小,其剪切弹性模量和弹性模量越小,其硅胶管制的柔性关节柔性和力学特性越好。该研究为弹性硅胶管在气动人工驱动器的应用进一步研究奠定了基础。