Crystallization kinetics of Sn40Se60 thin films for phase change memory applications

The crystallization kinetics of Sn₄₀Se₆₀ thin films has been successfully investigated using sheet resistance versus temperature measurements. Thermal evaporation was used to deposit the films on ordinary glass substrates. The crystallization temperature for Sn₄₀Se₆₀ thin film was found to be 156.6 ± 0.3 ℃. In the as-deposited state, the sheet resistance was found to be 195 MΩ, this value declined to 1560 Ω/口 upon annealing. The value of activation energy obtained from the Kissinger plot was 0.62 ± 0.07 eV. From the results obtained, Sn₄₀Se₆₀ is a promising alloy for PCM application because of its high electrical contrast, high crystallization temperature, and relatively high activation energy.     

Cell‐Tethered Ligands Modulate Bone Remodeling by Osteoblasts and Osteoclasts

The goals of the present study are to establish an in vitro co‐culture model of osteoblast and osteoclast function and to quantify the resulting bone remodeling. The bone is tissue engineered using well‐defined silk protein biomaterials in 2D and 3D formats in combination with human cells. Parathyroid hormone (PTH) and glucose‐dependent insulinotropic peptide (GIP) are selected because of their roles in bone remodeling for expression in tethered format on human mesenchymal stem cells (hMSCs). The cell‐modified biomaterial surfaces are reconstructed from scanning electron microscopy images into 3D models for quantitative measurement of surface characteristics. Increased calcium deposition and surface roughness are found in 3D surface models of silk protein films remodeled by co‐cultures containing tethered PTH, and decreased surface roughness is found for the films remodeled by tethered GIP co‐cultures. Increased surface roughness is not found in monocultures of hMSCs expressing tethered PTH, suggesting that osteoclast‐osteoblast interactions in the presence of PTH signaling are responsible for the increased mineralization. These data point towards the design of in vitro bone models in which osteoblast‐osteoclast interactions are mimicked for a better understanding of bone remodeling.     

A physical optics approach to near field RCS computations

The scattered field of a perfectly conducting body treated using a physical optics approach is obtained in near field in either the monostatic or bistatic case. This approach opens new prospects for a broad range of applications in the areas of radar cross section (rcs) and antennas. Numerical examples for simple shapes (circular and rectangular plates) are given. Remarkable phenomena are found and discussed.     

Exploring time series retrieved from cardiac implantable devices for optimizing patient follow-up

Current cardiac implantable devices (IDs) are equipped with a set of sensors that can provide useful information to improve patient follow-up and prevent health deterioration in the postoperative period. In this paper, data obtained from an ID with two such sensors (a transthoracic impedance sensor and an accelerometer) are analyzed in order to evaluate their potential application for the follow-up of patients treated with a cardiac resynchronization therapy (CRT). A methodology combining spatiotemporal fuzzy coding and multiple correspondence analysis (MCA) is applied in order to: 1) reduce the dimensionality of the data and provide new synthetic indexes based on the "factorial axes" obtained from MCA; 2) interpret these factorial axes in physiological terms; and 3) analyze the evolution of the patient's status by projecting the acquired data into the plane formed by the first two factorial axes named "factorial plane." In order to classify the different evolution patterns, a new similarity measure is proposed and validated on the simulated datasets, and then, used to cluster observed data from 41 CRT patients. The obtained clusters are compared with the annotations on each patient's medical record. Two areas on the factorial plane are identified, one being correlated with a health degradation of patients and the other with a stable clinical state.     

High performance GaAs MESFETs with molecular implanted and optimized lowly-doped drain structure for maximized speed, gain and breakdown performance

GaAs MESFETs with novel lowly-doped drain structures have been developed utilizing molecular implants of silicon trifluoride. Short-channel effects in the 1/4 μm enhancement- and depletion-mode transistors have been suppressed with drain-induced barrier height lowering of less than 70 mV/V and pinch-off voltage shifts of less than 220 mV as the gate length was scaled from 1.0 to 1/4 μm. The 3-terminal breakdown, the transconductance to output conductance ratio, and the unity current gain, cut-off frequency were simultaneously optimized. The E-mode device possessed breakdown of >10 V, G_m · R_ds > 9.5, F_t > 55 GHz, and nominal on-resistance of 2.1 Ω mm while the D-mode device had breakdown >10 V, G_m · R_ds > 6.0, F_t > 45 GHz, and nominal on-resistance of 1.9 Ω mm. These optimized transistors enabled the realization of a variety of low-power digital and high-power mixed signal circuits, using 3-level source-coupled transistor and common-mode logic, such as laser and electro-optic drivers, highly integrated transceivers, multiplexers, demultiplexers, and clock data recover circuits.     

Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing

A theoretical and experimental study of a particular transverse-electric (TE) mode lasing mechanism of a tunneling injection InP quantum-dot (QD) laser is reported. In the experiment, the TE mode lasing action takes place at the first excited state of InP biaxially compressively strained QDs. This QD state is coupled to the ground state of two tensile-strained InGaP quantum wells (QWs) although the tensile-strained QW structure favors the transverse-magnetic (TM) polarization light emission. The measured TE and TM modal gain spectra show a typical QW gain evolution behavior at low injection currents, which can be theoretically modeled by the quasi-equilibrium of carrier distribution. When the injection current is increased near threshold, a TE gain narrowing and a simultaneous TM gain pinning are observed in the measured modal gain spectra, which cannot be explained via the quasi-equilibrium model. We propose a polarization-dependent photon-mediated carrier redistribution in the QD-coupled-QW structure to explain this TE and TM gain evolution behavior. When the injection current is just below threshold, the strong carrier depletion via stimulated emission due to coupling between the InP QD and InGaP QW states plays an important role in carrier redistribution, which depends on the optical transition energy and polarization. This concept of the polarization-dependent photon-mediated carrier redistribution explains the TE gain narrowing and TM gain pinning behavior. In addition, a coupled rate equation model is established, and the calculated polarization power ratio based on the coupled rate equations explains the experimental observation.     

High quality LTCC resonator for voltage-controlled oscillator

Design and technology of microwave conductor lines embedded in low-temperature cofired ceramic (LTCC) multilayer substrates are summarized with a focus on achieving the highest possible quality (Q) factor for a given line inductance. The work was initiated to test the integrability of base station voltage-controlled oscillators (VCOs) in ceramic multilayer substrates. This approach leads to a miniaturization of current versions by a factor of 2 to 4. However, base station specifications for phase noise and hence resonator Q are extremely demanding. Therefore, both the design and the processing technology were optimized. By choosing a twin-line design with two parallel lines vertically separated by a single LTCC layer, Q factors of 90 and 180 have been achieved for integrated 5.5 nH inductors at frequencies of 640 MHz and 1650 MHz, respectively. Application of this result to VCO modules in standard LTCC technology already yields low phase noise levels, e.g., -136 dBc/Hz at 100 kHz offset, which is suitable for base station applications. However, further noise reduction is expected from a dedicated high Q fabrication process that uses conventional via punching and filling steps to replace the ceramic material between the two lines by conductive silver paste. This raises the Q to 120 and 200, respectively, at the two frequencies and adds extra degrees of freedom to LTCC design for low-loss wireless solutions.     

The influence of packaging materials on RF performance

At frequencies beyond 1 GHz, every component of the IC package contributes to the RF performance, whether required or not. In this work, we study the effects of packaging materials namely, the substrate and the globtop/underfill material on RF performance. We have measured interconnects on two area-array CSPs, the ball grid array and the polymer stud grid array using IMEC’s MCM-D technology. The measurements on the package interconnect show that the losses in the package substrate material account for about 50% of the total losses at 1.8 GHz and this drops to less than 20% at 5.2 GHz. The losses due to impedance mismatch dominate the losses especially below 10 GHz and considerable improvement in performance cannot be obtained by using an improved/expensive substrate. The other study is about the influence of globtop/underfill materials on wirebonds (through 3D EM simulations) as well as on standard 50 Ω MCM-D transmission lines (through experiments). While a higher value of dielectric constant of the globtop/underfill material is better on wirebonds, the influence of loss tangent is felt only above values of 0.1. The influence of seven different globtop/undefill materials on 50 Ω transmission lines has been used to extract their dielectric constant and loss tangent values at 30 GHz. These results are very valuable since one can hardly find the properties of globtop/underfill materials beyond 1 GHz.