基于AMESim的新型数字控制液压冲击器的仿真

介绍了一种基于高速开关阀的新型数字控制液压冲击器,设计时采用了两级流量放大,在发挥高速开关阀控制优势的同时,避免了高速开关阀通量小的劣势,使得此种数字控制冲击器设计思路在大流量高功率冲击器上得以实现。用AMESim软件建模并仿真。     

环氧灌封料中无机填料的研究

简述了环氧灌封料中无机填料的使用种类和性能,分析了纳米TiO2、SiO2等粒子对材料性能的影响。同时利用双层模型和公式模型解释了颗粒含量、颗粒大小等影响材料性能的原因。     

Bis(Benzofuran–1,3-N,N-heterocycle)s as Symmetric and Synthetic Drug Leads against Yellow Fever Virus

The yellow fever virus (YFV) is an emerging RNA virus and has caused large outbreaks in Africa and Central and South America. The virus is often transmitted through infected mosquitoes and spreads from area to area because of international travel. Being an acute viral hemorrhagic disease, yellow fever can be prevented by an effective, safe, and reliable vaccine, but not be eliminated. Currently, there is no antiviral drug available for its cure. Thus, two series of novel bis(benzofuran–1,3-imidazolidin-4-one)s and bis(benzofuran–1,3-benzimidazole)s were designed and synthesized for the development of anti-YFV lead candidates. Among 23 new bis-conjugated compounds, 4 of them inhibited YFV strain 17D (Stamaril) on Huh-7 cells in the cytopathic effect reduction assays. These conjugates exhibited the most compelling efficacy and selectivity with an EC₅₀ of <3.54 μM and SI of >15.3. The results are valuable for the development of novel antiviral drug leads against emerging diseases.     

基于滑动窗口的关联规则增量式更新算法

现有的关联规则算法大多都致力于解决增量式更新问题,需要多次扫描数据集,无法对海量数据进行有效处理。针对此问题,提出了基于滑动窗口的关联规则增量式更新算法(SWIUA),利用滑动窗口进行数据更新,挖掘出用户感兴趣的关联规则。该算法只需要扫描原始数据集和更新的数据各一遍,降低了I/O时间;并采用优化策略对候选项集过滤和删除,提高了关联规则的挖掘性能,能有效处理大量新增数据。     

单载流子传输双异质结光敏晶体管频率特性分析(邀请论文)

为了缓解光敏晶体管探测器在响应度和响应速度优化时存在的矛盾并提高响应度和响应速度,分析了单载流子传输(uni—travelling—carrier,UTC)双异质结光敏晶体管(double hetero-junction phototransistor,DHPT)中光生载流子对发射结结电容和集电结结电容的影响,建立了UTC—DHPT的频率特性模型.基于所建模型,研究了UTC—DHPT在电学晶体管工作状态(double hetero-junction transistor,DHBT)、基极光偏置的二端工作模式(two terminal,2T)和基极光电混合偏置的三端工作模式(three terminal,3T)的光电流增益和光学特征频率.结果表明:UTC—DHPT比传统的单异质结光敏晶体管(single hetero-junction phototransistor,SHPT)有更好的频率特性,3T工作模式下的UTC—DHPT可以同时提供高响应度和高响应速度.     

3～6GHz SiGe HBT Cascode低噪声放大器的设计

基于Jazz 0.35μm SiGe工艺设计一款满足UWB和IEEE802.11a标准的低噪声放大器.采用并联电感峰化技术与Cascode结构来展宽带宽;完成了芯片版图的设计,芯片面积为1.16 mm×0.78 mm;在带宽为3~6 GHz范围内,最大增益为26.9 dB,增益平坦度为±0.9 dB.放大器的输入输出匹配良好,其回波损耗S₁₁和S₂₂均小于-10dB,输入与输出驻波比小于1.5,1 dB压缩点为-22.9 dBm.在整个频段内,放大器无条件稳定.     

改善放大器噪声性能的SiGe HBT几何参数优化设计

研究有源器件SiGe HBT的几何参数对单片低噪声放大器(LNA)噪声性能的影响.基于0.35μm SiGe BiCMOS工艺,研制了4款采用不同几何参数的SiGe HBT LNA.实验结果显示,在给定的偏置条件下,当发射极宽长比较小时,小范围改变发射极宽度对噪声系数(NF)改善微弱,但适当增长发射极条长和增加发射极条数明显降低了NF,且不牺牲增益.另外,与采用其他几何尺寸的SiGe HBT LNAs相比,选用器件发射极面积为A_E=4μm×40μm×4的LNA性能最优,在0.2~1.2 GHz内获得低至2.7 dB的噪声系数,高达26.7 dB的相关增益和最接近于50Ω的最佳噪声源阻抗.由于没有使用占片面积大的电感,放大器芯片面积仅为0.2 mm².     

一款适用于WCDMA标准的大动态范围SiGe HBT可变增益放大器设计

第三代移动通信标准WCDMA要求放大器增益可调,并且增益动态范围较大.根据这一要求给出了一种基于SiGe HBT具有高动态范围的可变增益放大器(VGA)设计.放大器为三级级联结构,第一级为输入缓冲级,第二级为增益控制级,最后为放大级.VGA的增益控制通过调整第二级的偏置实现.VGA在1.95 GHz频率下,在0～2.7 V增益控制电压变化下,具有44 dB增益变化范围,最大增益49 dB.在最大增益处最小噪声系数为2.584 dB,输入输出电压驻波比低于2,性能良好.     

Different dependence of band-to-band and Fowler-Nordheim tunnelingon source doping concentration of an n-MOSFET

As the value of the maximum source doping concentration in the gate/source overlap area of an n-channel MOSFET (N_dmax) varies, it has been observed that the edge Fowler-Nordheim (FN) tunneling through the gate oxide in the overlap area is changed significantly. In contrast, the N_dmax variation has little impact on band-to-band tunneling current (I_BB) induced in the same overlap area. We attribute the independence of I_BB on N _dmax to the inhibition of band-to-band tunneling at the N_dmax location where silicon band bending becomes less than 1.1 eV resulting from increase of source doping concentration N_d beyond ~1.6×10¹⁹ cm^-3 (this value depends on the device used and its bias condition)     

功率SiGe/Si HBT的温度特性

测量了Si/SiGe HBT在23~260℃温度范围内的Gummel图、理想因子n、不同基极电流下的发射结电压VBE、电流增益β、共发射极输出特性,以及Early电压VA的变化情况。结果表明,随电流和温度的增加,β减少,VBE随温度的变化率dVBE/dT小于同质结Si BJT。在高集电极-发射极电压和大电流下,在输出特性曲线上观察到了负微分电阻(NDR)特性。结果还显示,电流增益-Early电压积与温度的倒数(1/T)呈线性关系,这对模拟电路应用是很重要和有用的。