Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

CPU芯片封装技术的发展演变

本文主要介绍了CPU芯片封装技术的发展演变,以及未来的芯片封装技术。同时,从中可以看出芯片技术与封装技术相互促进,协调发展密不可分的关系。     

Improvement of AlGaInP light emitting diode by sulfide passivation

The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated.     

Ripple: a wireless token-passing protocol for multi-hop wireless mesh networks

This work presents a wireless token-passing protocol, named Ripple, for wireless mesh networks (WMNs). In contrast to existing random-access approaches, Ripple uses a decentralized controlled-access approach to protect nodes from unintentional packet collisions and maximize the spatial reuse. The performance of Ripple under an error-free wireless channel was investigated and the accuracy of the analysis was verified by simulation. Simulation results also indicated that Ripple achieved throughput, stability, and QoS enhancement than that of 802.11 DCF under a highly loaded situation.     

一种制氢预转化催化剂还原的新方法

对上海高桥分公司2×10~4m~3/h(标准状态)制氢装置原设计的预转化催化剂还原流程进行了改进。先跳开预转化反应器,利用转化炉制取氢气,再用自产的高纯氢气代替重整氢,对预转化催化剂进行单独升温还原,避免了催化剂在还原初期因发生甲烷化反应而超温失活的问题,使催化剂具有更好的活性和稳定性。     

异步DS-CDMA系统中基于矩阵点除算法的DOA估计

针对异步DS-CDMA系统中的多用户环境,本文提出了一种低复杂度的DOA估计算法——矩阵点除算法。该算法通过对感兴趣信息的逐次分离,实现了DOA的逐路径估计。算法具有两方面显著优势:(1)克服了传统的DOA估计算法在路径总数大于天线阵元数时不能工作这一缺陷:(2)避免了计算复杂的特征值分解运算,大大降低了算法复杂度。仿真实验验证了算法的有效性。     

金属/Al2O3基纳米复合材料研究最新进展

金属／Al2O3纳米复合材料在保持原有金属的功能特性时，还可以获得 很好的力学性能，是有良好发展前景的一种纳米复合材料。本文回顾了近年来金属／Al2O3基纳米复合材料在制备工艺，微观结构和力学性能，增韧强化机理方面的最新进展，并指出了今后的研究方向。     

微球聚焦测井仪小极板的理论及实验研究

本文对微球聚焦测井仪小极板进行研究，利用有限元法计算了小极板的均质及非均质Ｋ值，并与实验结果进行了比较，结果表明理论值怀实验值吻合较好，说明了理论计算的正确性，给出了对应于小极板的泥饼校正图版及屏流比曲线，对小极板的推广应用有实用价值。     

小块气藏早期动态特征综合评价

应用试井方法，提出一套比较切合实际的小块气藏动态特征综合评价方法，推导出水驱气藏水侵量的计算公式，编制了天然气高压物性参数计算和气藏稳产年限预测等程序软件。