Temperature dependence of hydrogenated amorphous silicon thin-film transistors

The temperature dependence characteristics of hydrogenated amorphous silicon thin-film transistors were investigated. The results indicate that as the temperature was increased, the threshold voltage and the field-effect mobility were first increased, and then decreased, which may be controlled by different mechanisms at low and high temperatures. In addition, if the temperature was higher than 420 K, the Fermi level was promoted to the degenerate-like states, the current channel always existed due to the temperature effect, and the threshold voltage became negative.     

An empirical formula for the prediction of rain attenuation infrequency range 0.6 - 100 GHz

An empirical formula for calculating the extinction cross section (ECS) by raindrops over a broad frequency range is first derived based on extensive calculations made on a widely varying in mean radius of modified Pruppacher and Pitter (MPP) raindrop models ranging from 0.25 to 3.5 mm. The expansion coefficients in the empirical formula are determined by least-squares curve fitting of numerical data obtained by the volume integral equation formulation (VIEF). The formula satisfies the frequency and raindrop size dependence. Numerical results obtained from the empirical formula for calculating the ECS are generally in good agreement with those calculated by the VIEF for raindrops with mean radius varying from 0.25 to 3.5 mm in the frequency range from 0.6 to 100 GHz. The average error in the ECS is less than 10%. The formula thus provides a simple and inexpensive method for calculating the ECS of raindrops, which otherwise requires complicated and expensive methods of calculation. By implementing this empirical formula of ECS into the rain attenuation equation, a new numerically empirical formula for calculating the specific rain attenuation is also proposed. The validity of the empirical formula for calculating the specific rain attenuation is also checked by comparing the obtained results of specific rain attenuation with those obtained from Li et al.'s (1995) solution, Yeo et al.'s (1993) measurement, and Olsen et al.'s (1978) power-law equation     

我国建筑涂料技术进步简评

从以下诸方面简述我国建筑涂料的技术进步:⑴新品种涂料的研制开发;⑵加强对配套材料及施工技术的研究;⑶超细填料在涂料中的应用;⑷计算机自动配色技术;⑸产品标准的修订;⑹建筑涂料的实用范围扩大。     

Efficient design/simulation algorithms for simultaneous switching noise in leadframe packages

 Two new modeling and simulation approaches for Simultaneous Switching Noise (SSN) are described and compared to “brute force” simulation by SPICE. Both simulation accuracy and simulation run-time are considered. The two new approaches are: 1) the “effective inductance” method, in which an approximate, very efficient method of extracting an SSN L _eff  is utilized; and 2) the “macromodel” method, in which the complex inductance network responsible for SSN is represented by only a few dominant poles in the frequency domain and the time domain response is obtained by an efficient convolution algorithm. Both approaches are shown to be accurate and fast, but only the effective inductance algorithm is robust in numerical convergence. Received: 19 March 1997 / Accepted: 25 March 1997     

A simple method for extracting average doping concentration in thepolysilicon and silicon surface layer near the oxide in polysilicon-gateMOS structures

The author demonstrates a simple technique that extracts average doping concentration in the polysilicon and silicon near the oxide in a metal/polysilicon/oxide/silicon system. The technique is based on the maximum-minimum capacitance method on two large area structures-one MOSFET and one MOSC (MOS capacitor). The technique is simple and reliable since only three data points in the C-V data are required-two points in MOSC C-V and one point in MOSFET C-V. The technique avoids inaccuracy caused by interface traps at the polysilicon/oxide and the oxide/silicon interface. The technique can be implemented into fab routine electric-test procedures for simultaneously monitoring change of doping concentration in polysilicon and silicon during process development     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device