Hot-carrier-induced degradation for partially depleted SOI 0.25-0.1 /spl mu/m CMOSFET with 2-nm thin gate oxide

Hot-carrier-induced degradation of partially depleted SOI CMOSFETs was investigated with respect to body-contact (BC-SOI) and floating-body (FB-SOI) for channel lengths ranging from 0.25 down to 0.1 /spl mu/m with 2 nm gate oxide. It is found that the valence-band electron tunneling is the main factor of device degradation for the SOI CMOSFET. In the FB-SOI nMOSFET, both the floating body effect (FBE) and the parasitic bipolar transistor effect (PBT) affect the hot-carrier-induced degradation of device characteristics. Without apparent FBE on pMOSFET, the worst hot-carrier stress condition of the 0.1 /spl mu/m FB-SOI pMOSFET is similar to that of the 0.1 /spl mu/m BC-SOI pMOSFET.     

Solution-processed vanadium oxide as an anode interlayer for inverted polymer solar cells hybridized with ZnO nanorods

Solution-processed vanadium oxide (V₂O₅) as an anode interlayer is introduced between the organic layer and the Ag electrode for improving the performance of the low-cost inverted polymer solar cells hybridized with ZnO nanorods. Our investigations indicate that the solution-processed V₂O₅ interlayer as an electron-blocking layer can effectively prevent the leakage current at the organic/Ag interface. The power conversion efficiency is improved from 2.5% to 3.56% by the introduction of the V₂O₅ interlayer. The V₂O₅ interlayer also serves as an optical spacer to enhance light absorption, and thereby increases the photocurrent. Compared to the vacuum-deposited techniques, the fabrication of the solution-processed V₂O₅ interlayer is simple and effective. The solution-based approach makes it attractive for applications to mass production and potentially printed organic electronics.     

Temperature dependence of hot-carrier-induced degradation in 0.1μm SOI nMOSFETs with thin oxide

This letter investigates hot-carrier-induced degradation on 0.1 μm partially depleted silicon-on-insulator (SOI) nMOSFETs at various ambient temperatures. The thermal impact on device degradation was investigated with respect to body-contact nMOSFETs (BC-SOI) and floating-body SOI nMOSFETs (FB-SOI). Experimental results show that hot-carrier-induced degradation on drive capacity of FB-SOI devices exhibits inverse temperature dependence compared to that of BC-SOI devices. This is attributed to the floating-body effect (FBE) and parasitic bipolar transistor (PBT) effect     

Released Si microstructures fabricated by deep etching and shallowdiffusion

A novel etch-diffusion process is developed for fabricating high-aspect-ratio Si structures for microsensors. This is accomplished by first dry etching narrow gap Si microstructures using an electron cyclotron resonance (ECR) source, followed by a shallow B diffusion to fully convert the etched microstructures to p⁺⁺ layer. Microstructures up to 40 μm deep with 2-μm-wide gaps were etched with a Cl₂ plasma generated using the ECR source. Vertical profile and smooth morphology were obtained at low pressure. A shallow B diffusion at 1175°C for 5.5 h. was then carried out to convert the 40-μm-thick resonant elements to p⁺⁺ layer. A second dry etching step was used to remove the thin p⁺⁺ layer around the bottom of the resonant elements, followed by bonding to glass and selective wet etch. Released high-aspect-ratio Si microsensors with thicknesses of 35 μm have been demonstrated. At atmospheric pressure, only 5 V_dc driving voltage is needed for 2.5 μm vibration amplitude, which is less than the 10 V_dc required to drive 12-μm-thick resonators fabricated by conventional dissolved wafer process     

Four-arc approximation to ellipses: The best in general

So far, the four-arc approximations to an ellipse E are made under the condition that the major and minor axes keep strictly unchanged. In general, however, this condition is unnecessary. Then the fitting can be further improved. Considering a representative quadrant of E, we first draw two auxiliary circular arcs tangent to E at the axes but having a gap ε at their boundary, such that the small arc S lies outside the large arc L. Meanwhile the extreme errors of S and L w.r.t. E are ε and −ε respectively. Giving the radii of S and L a decrement −ε/2 and an increment ε/2 brings them to join smoothly. Thus, reducing the overall error to minimum, an analytic solution in implicit form is derived.     

Value of Micro-CT for Monitoring Spinal Microvascular Changes after Chronic Spinal Cord Compression

Neurological degeneration can occur after compression of the spinal cord. It is widely accepted that spinal cord compression leads to ischemic lesions and ultimately neurological dysfunction due to a narrowed spinal canal. Therefore, an in-depth understanding of the pathogenesis of spinal cord compression injury is required to help develop effective clinical interventions. In the present study, we propose a new method of quantitative 3D micro-CT to observe microvascular events in a chronic spinal cord compression rat model. A total of 36 rats were divided into two groups: sham control group (n = 12) and compressive spinal cord injury group (n = 24). Rats were scarified at four weeks after surgery. In each group, CD34 micro-vessel immunohistochemical staining was performed in half of the animals, while micro-CT scanning was performed in the other half. Microvessel density (MVD) was measured after immunohistochemical staining, while the vascular index (VI) was measured in 3D micro-CT. In comparison with sham control, abnormal somatosensory evoked potentials (SEP) can be seen in all 24 cases of the compression group, and VI shows the amount of microvessels reduced consistently and significantly (p < 0.01). A significant correlation is also found between MVD and VI (r = 0.95, p < 0.01). These data suggest that quantitative 3D micro-CT is a sensitive and promising tool for investigating microvascular changes during chronic compressive spinal cord injury.     

Comparative Efficacy and Safety of P2Y12 Inhibitor Monotherapy and Dual Antiplatelet Therapy in Patients with and without Diabetes Mellitus Undergoing Percutaneous Coronary Intervention

Increasing evidence has shown P2Y12 inhibitor monotherapy is a feasible alternative treatment for patients after percutaneous coronary intervention (PCI) with stent implantation in the modern era. However, patients with diabetes mellitus (DM) have a higher risk of ischemic events and more complex coronary artery disease. The purpose of this study is to evaluate the efficacy and safety of this novel approach among patients with DM and those without DM. We conducted a systematic review and meta-analysis of randomized controlled trials that compared P2Y12 inhibitor monotherapy with 12 months of dual antiplatelet therapy (DAPT) in patients who underwent PCI with stent implantation. PubMed, Embase, Cochrane library database, ClinicalTrials.gov, and three other websites were searched for our data from the earliest report to January 2022. The primary efficacy outcome was major adverse cardiovascular and cerebrovascular events (MACCE): a composite of all-cause mortality, myocardial infarction, stent thrombosis, and stroke. The primary safety outcome was major or minor bleeding events. The secondary endpoint was net adverse clinical events (NACE) which are defined as a composite of major bleeding and adverse cardiac and cerebrovascular events. A total of four randomized controlled trials with 29,136 patients were included in our meta-analysis. The quantitative analysis showed a significant reduction in major or minor bleeding events in patients treated with P2Y12 inhibitor monotherapy compared to standard DAPT (OR: 0.68, 95% CI: 0.46–0.99, p = 0.04) without increasing the risk of MACCE (OR: 0.96, 95% CI: 0.85–1.09, p = 0.50). The number of NACE was significantly lower in the patients treated with P2Y12 inhibitor monotherapy (OR: 0.84, 95% CI: 0.72–0.97, p = 0.019). In DM patients, P2Y12 inhibitor monotherapy was associated with a lower risk of MACCE compared to standard DAPT (OR: 0.85, 95% CI: 0.74–0.98, p = 0.02). Furthermore, P2Y12 inhibitor monotherapy was accompanied by a favorable reduction in major or minor bleeding events (OR: 0.80, 95% CI: 0.64–1.05, p = 0.107). In non-DM patients, P2Y12 inhibitor monotherapy showed a significant reduction in major or minor bleeding events (OR: 0.58, 95% CI: 0.38–0.88, p = 0.01), but without increasing the risk of MACCE (OR: 0.99, 95% CI: 0.82–1.19, p = 0.89). Based on these findings, P2Y12 inhibitor monotherapy could significantly decrease bleeding events without increasing the risk of stent thrombosis or myocardial infarction in the general population. The benefit of reducing bleeding events was much more significant in non-DM patients than in DM patients. Surprisingly, P2Y12 inhibitor monotherapy could lower the risk of MACCE in DM patients. Our study supports that P2Y12 inhibitor monotherapy is a promising alternative choice of medical treatment for patients with DM undergoing PCI with stent implantation in the modern era.     

A general dynamic force distribution algorithm for multifingeredgrasping

A general dynamic force distribution (DFD) algorithm for multifingered grasping is presented. Based on the convexity and cone property of contact constraints, the optimal internal force is defined. Determination of the contact force is divided into two phases: (1) determine the direction of the optimal internal force during grasp planning and (2) determine the manipulation force and compensation factor during task manipulation. The total computation cost consists of off-line numerical iterations and on-line analytical computations. Only the latter is related to the real-time control. The algorithm can directly deal with the nonlinear and/or coupled constraints and well overcome the temporal discontinuity.     

自行式移动模架施工技术应用探讨——以重庆庙村大桥上部结构施工为例

地基软弱、墩柱高、支架搭设困难长期捆扰着山地丘林地区的桥梁上部结构施工,无支架施工是解决这一施工难题的方法之一。本文以重庆庙村大桥上部结构施工为例,简要介绍了自行式移动模架施工技术,并在不同墩高、不同跨径的情况下与满堂支架法进行了效益对比,对自行式移动模架施工技术的应用前景进行了一些初步探讨。