珠光体球化的分形研究

珠光体球化反映到金相上，是一种不规则图像的变化，并且具有分形的特征，可望用分形几何的方法来进行描述。以Cr-Mo钢的珠光体球化为例，用分形维数来描述珠光体球化程度；用小岛法对15CrMo钢的珠光体球化图谱进行了测量。实验表明，珠光体球化从1级到6级，其相应的分形维数范围为1.3156-1.9282。从电厂运行了10^5h的15CrMo钢管上取样，实测了该试样的珠光体球化等级，结果表明，以分形维数表示的球化程度与按图谱评定的球化等级完全吻合。     

基于多抽样率信号处理的无源雷达MTD方法

以数字电视信号为机会照射源的雷达系统研究为背景 ,提出用以多抽样率信号处理为基础的多级抽取信号处理算法解决运动目标检测中海量数据处理问题。文中叙述了数字电视广播信号回波的数学模型、多级抽取基本原理、目标检测算法 ,以数字电视信号为反射回波做了仿真 ,对运动目标进行检测 ,并对仿真结果做了分析。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

AlGaAs／GaAs HBT集成电路的CAD

介绍了一套用于ＡｌＧａＡｓ／ＧａＡｓＨＢＴ集成电路的ＣＡＤ软件，它可完成ＨＢＴ的器件模拟、模型参数提取及电路模拟。应用该软件对ＨＢＴ运算放大器进行了模拟，为电路的研制提供了依据。     

改性燕麦麸的保健营养功效初探

介绍了以燕麦麸为原料，经现代食品加工技术精制而成的新型保健食品－高纤麦维素。总膳食纤维含量高达30％，可溶性膳食纤维9．56％，其中主要成分为β－葡聚糖。在高脂饲料中添加本品10％，饲喂高脂模型大鼠4周，结果：大鼠血脂TC、TG、LDL－C值显著低于对照组，HDL－C值略有提高。利用核素^67Ga直结肠通过显像观察，可显著改善肠蠕动功能，迅速通便。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Evaluating the impact of CASE: an empirical comparison of retrospective and cross-sectional survey approaches

The purpose of this paper is to evaluate two methods of assessing the productivity and quality impact of Computer Aided Software Engineering (CASE) and Fourth Generation Language (4GL) technologies: (1) by the retrospective method; and (2) the cross-sectional method. Both methods involve the use of questionnaire surveys. Developers' perceptions depend on the context in which they are expressed and this includes expectations about the effectiveness of a given software product. Consequently, it is generally not reliable to base inferences about the relative merits of CASE and 4GLs on a cross-sectional comparison of two separate samples of users. The retrospective method that requires each respondent to directly compare different products is shown to be more reliable. However, there may be scope to employ cross-sectional comparisons of the findings from different samples where both sets of respondents use the same reference point for their judgements, and where numerical rather than verbal rating scales are used to measure perceptions.     

L－B膜修饰电极循环伏安行为模拟──（Ⅰ）电荷转移速度常数对循环伏安性能的影响

本文用计算机数字模拟方法研究了电活性分子多层Ｚ型Ｌ－Ｂ膜修饰电极的循环伏安行为。计算了电极与修饰Ｌ－Ｂ膜分子第一层之间的电荷转移速度常数Ｋ_ｏ，Ｌ－Ｂ膜分子层间的电荷转移速度常数ｋ_ｉ；对峰电位差△Ｅ_ｐ及阳极峰面积Ｑ的影响，以及在不同条件下各层分子的氧化态分数随扫描时间的变化。为研究和设计电活性分子修饰电极的实际体系提供了大量数据和信息。     

Presupposition failure — A comedy of errors

Presuppositions of utterances are the pieces of information you convey with an utterance no matter whether your utterance is true or not. We first study presupposition in a very simple framework of updating propositional information, with examples of how presuppositions of complex propositional updates can be calculated. Next we move on to presuppositions and quantification, in the context of a dynamic version of predicate logic, suitably modified to allow for presupposition failure. In both the propositional and the quantificational case, presupposition failure can be viewed as error abortion of procedures. Thus, a dynamic assertion logic which describes the preconditions for error abortion is the suitable tool for analysing presupposition.