高音、微型及号筒扬声器单元的大信号性能

6．2号筒压缩式驱动器（单元） 这是一个用酚醛树脂含浸的织物为振膜的号筒压缩式单元,音圈直径51nm,卷线高度4．6mm,气隙厚4mm。连接的号筒和相位塞被移走,后腔体积仔细地密封好以避免任何额外的声学共振。     

Fiber Bragg Gratings in Small-Core Ge-Doped Photonic Crystal Fibers

This paper reports fiber Bragg gratings （FBGs） inscribed in a small-core Ge-doped photonic crystal fibers with a UV laser and a Talbot interferometer. The responses of such FBGs to temper- ature, strain, bending, and transverse-loading were systematically investigated. The Bragg wavelength of the FBGs shifts toward longer wavelengths with increasing temperature, tensile strain, and transverse-loading. The bending and transverse- loading properties of the FBGs are sensitive to the fiber orientations.     

Dirty RF: A New Paradigm

The implementation challenge for new low-cost low-power wireless modem transceivers has continuously been growing with increased modem performance, bandwidth, and carrier frequency. Up to now we have been designing transceivers in a way that we are able to keep the analog (RF) problem domain widely separated from the digital signal processing design. However, with today’s deep sub-micron technology, analog impairments – “dirt effects” – are reaching a new problem level which requires a paradigm shift in the design of transceivers. Examples of these impairments are phase noise, non-linearities, I/Q imbalance, ADC impairments, etc. In the world of “Dirty RF” we assume to design digital signal processing such that we can cope with a new level of impairments, allowing lee-way in the requirements set on future RF sub-systems. This paper gives an overview of the topic and presents analytical evaluations of the performance losses due to RF impairments as well as algorithms that allow to live with imperfect RF by compensating the resulting error effects using digital baseband processing.     

Hidden Markov Modeling of Error Patterns and Soft Outputs for Simulation of Wideband CDMA Transmission Systems

In this paper, a Hidden Markov Modeling (HMM) technique for a fast and accurate simulation of bit errors and soft outputs in wireless communication systems is presented. HMMs with continuous probability distributions are considered. Soft outputs and bit errors are combined to error patterns. We focus on binary phase–shift keying (BPSK) modulation for direct–sequence spread spectrum (code–division multiple access, CDMA) transmission as proposed e.g. for the third generation wireless communication system UMTS (uplink for the frequency division duplex mode (FDD)). Comparisons of simulated bit error rates for HMM models and Rake receivers are shown for AWGN, flat fading, and vehicular channel conditions. In order to assess the ability of the HMM to describe the dynamical behaviour of the channel a comparison for transmission with interleaving and convolutional coding is presented. Furthermore calculated autocorrelation functions of the error patterns and error gap distributions corresponding to the Rake receiver and to the HMM, respectively, are presented. Our investigations show a strong dependence of the required HMM order on E_b/N₀ and the channel conditions. The degree of accordance of the HMM outputs and the training data is examined based on calculated statistical scoring indicators.     

Assessment of the Analytical Capabilities of Scanning Capacitance and Scanning Spreading Resistance Microscopy Applied to Semiconductor Devices

In this work we compare the performance of Scanning Capacitance Microscopy and Scanning Spreading Resistance Microscopy for the characterization of doping profiles in semiconductor devices. Particular attention is devoted to parameters of paramount importance for the failure analysis and the characterization of silicon devices, like the quantitative one-dimensional profiling accuracy, the electrical junction delineation and the two-dimensional sub-micron imaging capability.     

Exploring the Origin of the Temperature‐Dependent Behavior of PbS Nanocrystal Thin Films and Solar Cells

Temperature‐dependent studies of the electrical and optical properties of cross‐linked PbS nanocrystal (NC) solar cells can provide deeper insight into their working mechanisms. It is demonstrated that the overall effect of temperature on the device efficiency originates from the temperature dependence of the open‐circuit voltage and the short‐circuit current, while the fill factor remains approximately constant. Extensive modeling provides signs of band‐like transport in the inhomogeneously coupled NC active layer and shows that the charge transport is dominated by diffusion. Moreover, via low temperature absorption and photoluminescence (PL) measurements, it is shown that the optical properties of PbS thin films before and after benzenedithiol (BDT) treatment exhibit very distinct behavior. After BDT treatment, both the optical density (OD) and PL are shifted to lower energies, indicating the occurrence of electronic wave function overlap between adjacent NCs. Decrease of the temperature leads to additional red‐shift of the OD and PL spectra, which is explained by the well‐known temperature dependence of the PbS NCs' bandgap. Moreover, BDT treated PbS NCs show unusual properties, such as decrease of the PL signal and broadening of the spectra at low temperatures. These features can be attributed to the partial relaxation of the quantum confinement and the opening of new radiative and nonradiative pathways for recombination at lower temperatures due to the presence of trap states.     

Interfacial charges and electric field distribution in organic hetero-layer light-emitting devices

The electric field distribution in organic hetero-layer light-emitting devices based on N,N^′-diphenyl-N,N^′-bis(1-naphtyl)-1,1^′-biphenyl-4,4^′-diamine (NPB) and 8-tris-hydroxyquinoline aluminium (Alq₃) has been investigated under different bias conditions using capacitance–voltage measurements. Although this method yields primarily information on the differential capacitance, the data give clear evidence for the presence of negative interfacial charges with a density of 6.8×10¹¹e cm⁻² at the NPB/Alq₃ interface at large reverse bias. This leads to a jump of the electric field at the interface and a non-uniform field distribution in the hetero-layer device.     

Merocyanine/C60 Planar Heterojunction Solar Cells: Effect of Dye Orientation on Exciton Dissociation and Solar Cell Performance

In this study the charge dissociation at the donor/acceptor heterointerface of thermally evaporated planar heterojunction merocyanine/C₆₀ organic solar cells is investigated. Deposition of the donor material on a heated substrate as well as post‐annealing of the complete devices at temperatures above the glass transition temperature of the donor material results in a twofold increase of the fill factor. An analytical model employing an electric‐field‐dependent exciton dissociation mechanism reveals that geminate recombination is limiting the performance of as‐deposited cells. Fourier‐transform infrared ellipsometry shows that, at temperatures above the glass transition temperature of the donor material, the orientation of the dye molecules in the donor films undergoes changes upon annealing. Based on this finding, the influence of the dye molecules’ orientations on the charge‐transfer state energies is calculated by quantum mechanical/molecular mechanics methods. The results of these detailed studies provide new insight into the exciton dissociation process in organic photovoltaic devices, and thus valuable guidelines for designing new donor materials.     

Molecular Origin of the Charge Carrier Mobility in Small Molecule Organic Semiconductors

Small‐molecule organic semiconductors are used in a wide spectrum of applications, ranging from organic light emitting diodes to organic photovoltaics. However, the low carrier mobility severely limits their potential, e.g., for large area devices. A number of factors determine mobility, such as molecular packing, electronic structure, dipole moment, and polarizability. Presently, quantitative ab initio models to assess the influence of these molecule‐dependent properties are lacking. Here, a multiscale model is presented, which provides an accurate prediction of experimental data over ten orders of magnitude in mobility, and allows for the decomposition of the carrier mobility into molecule‐specific quantities. Molecule‐specific quantitative measures are provided how two single molecule properties, the dependence of the orbital energy on conformation, and the dipole‐induced polarization determine mobility for hole‐transport materials. The availability of first‐principles based models to compute key performance characteristics of organic semiconductors may enable in silico screening of numerous chemical compounds for the development of highly efficient optoelectronic devices.     

An integrated 8-12 GHz fractional-N frequency synthesizer in SiGe BiCMOS for satellite communications

We present an integrated fractional-N low-noise frequency synthesizer for satellite applications. By using two integrated VCOs and combining digital and analog tuning techniques, a PLL lock range from 8 to 12 GHz is achieved. Due to a small VCO fine tuning gain and optimized charge pump output biasing, the phase noise is low and almost constant over the tuning range. All 16 sub-bands show a tuning range above 900 MHz each, allowing temperature compensation without sub-band switching. This makes the synthesizer robust against variations of the device parameters with process, supply voltage, temperature and aging. The measured phase noise is ?87 dBc/Hz and ?106 dBc/Hz at 10 kHz and 1 MHz offset, respectively. In integer-N mode, phase noise values down to ?98 dBc/Hz at 10 kHz and ?111 dBc/Hz at 1 MHz offset, respectively, were measured.