Dirty RF: A New Paradigm

The implementation challenge for new low-cost low-power wireless modem transceivers has continuously been growing with increased modem performance, bandwidth, and carrier frequency. Up to now we have been designing transceivers in a way that we are able to keep the analog (RF) problem domain widely separated from the digital signal processing design. However, with today’s deep sub-micron technology, analog impairments – “dirt effects” – are reaching a new problem level which requires a paradigm shift in the design of transceivers. Examples of these impairments are phase noise, non-linearities, I/Q imbalance, ADC impairments, etc. In the world of “Dirty RF” we assume to design digital signal processing such that we can cope with a new level of impairments, allowing lee-way in the requirements set on future RF sub-systems. This paper gives an overview of the topic and presents analytical evaluations of the performance losses due to RF impairments as well as algorithms that allow to live with imperfect RF by compensating the resulting error effects using digital baseband processing.     

高音、微型及号筒扬声器单元的大信号性能

6．2号筒压缩式驱动器（单元） 这是一个用酚醛树脂含浸的织物为振膜的号筒压缩式单元,音圈直径51nm,卷线高度4．6mm,气隙厚4mm。连接的号筒和相位塞被移走,后腔体积仔细地密封好以避免任何额外的声学共振。     

Assessment of the Analytical Capabilities of Scanning Capacitance and Scanning Spreading Resistance Microscopy Applied to Semiconductor Devices

In this work we compare the performance of Scanning Capacitance Microscopy and Scanning Spreading Resistance Microscopy for the characterization of doping profiles in semiconductor devices. Particular attention is devoted to parameters of paramount importance for the failure analysis and the characterization of silicon devices, like the quantitative one-dimensional profiling accuracy, the electrical junction delineation and the two-dimensional sub-micron imaging capability.     

Evaluation of process parameter space of bulk FinFETs using 3D TCAD

Using full 3D TCAD, an evaluation of process parameter space of bulk FinFET is presented from the point of view of DRAM, SRAM and I/O applications. Process and device simulations are performed with varying uniform fin doping, anti-punch implant dose and energy, fin width, fin height and gate oxide thickness. Bulk FinFET architecture with anti-punch implant is introduced beneath the channel region to reduce the punch-through and junction leakage. For 30 nm bulk FinFET, anti-punch implant with low energy of 15 to 25 keV and dose of 5.0 × 10¹³ to 1.0 × 10¹⁴ cm⁻² is beneficial to effectively suppress the punch-through leakage with reduced GIDL and short channel effects. Our simulations show that bulk FinFETs are approximately independent of back bias effect. With identical fin geometry, bulk FinFETs with anti-punch implant show same I_ON-I_OFF behavior and approximately equal short channel effects like SOI FinFETs.     

Exploring the Origin of the Temperature‐Dependent Behavior of PbS Nanocrystal Thin Films and Solar Cells

Temperature‐dependent studies of the electrical and optical properties of cross‐linked PbS nanocrystal (NC) solar cells can provide deeper insight into their working mechanisms. It is demonstrated that the overall effect of temperature on the device efficiency originates from the temperature dependence of the open‐circuit voltage and the short‐circuit current, while the fill factor remains approximately constant. Extensive modeling provides signs of band‐like transport in the inhomogeneously coupled NC active layer and shows that the charge transport is dominated by diffusion. Moreover, via low temperature absorption and photoluminescence (PL) measurements, it is shown that the optical properties of PbS thin films before and after benzenedithiol (BDT) treatment exhibit very distinct behavior. After BDT treatment, both the optical density (OD) and PL are shifted to lower energies, indicating the occurrence of electronic wave function overlap between adjacent NCs. Decrease of the temperature leads to additional red‐shift of the OD and PL spectra, which is explained by the well‐known temperature dependence of the PbS NCs' bandgap. Moreover, BDT treated PbS NCs show unusual properties, such as decrease of the PL signal and broadening of the spectra at low temperatures. These features can be attributed to the partial relaxation of the quantum confinement and the opening of new radiative and nonradiative pathways for recombination at lower temperatures due to the presence of trap states.     

Interfacial charges and electric field distribution in organic hetero-layer light-emitting devices

The electric field distribution in organic hetero-layer light-emitting devices based on N,N^′-diphenyl-N,N^′-bis(1-naphtyl)-1,1^′-biphenyl-4,4^′-diamine (NPB) and 8-tris-hydroxyquinoline aluminium (Alq₃) has been investigated under different bias conditions using capacitance–voltage measurements. Although this method yields primarily information on the differential capacitance, the data give clear evidence for the presence of negative interfacial charges with a density of 6.8×10¹¹e cm⁻² at the NPB/Alq₃ interface at large reverse bias. This leads to a jump of the electric field at the interface and a non-uniform field distribution in the hetero-layer device.     

Hidden Markov Modeling of Error Patterns and Soft Outputs for Simulation of Wideband CDMA Transmission Systems

In this paper, a Hidden Markov Modeling (HMM) technique for a fast and accurate simulation of bit errors and soft outputs in wireless communication systems is presented. HMMs with continuous probability distributions are considered. Soft outputs and bit errors are combined to error patterns. We focus on binary phase–shift keying (BPSK) modulation for direct–sequence spread spectrum (code–division multiple access, CDMA) transmission as proposed e.g. for the third generation wireless communication system UMTS (uplink for the frequency division duplex mode (FDD)). Comparisons of simulated bit error rates for HMM models and Rake receivers are shown for AWGN, flat fading, and vehicular channel conditions. In order to assess the ability of the HMM to describe the dynamical behaviour of the channel a comparison for transmission with interleaving and convolutional coding is presented. Furthermore calculated autocorrelation functions of the error patterns and error gap distributions corresponding to the Rake receiver and to the HMM, respectively, are presented. Our investigations show a strong dependence of the required HMM order on E_b/N₀ and the channel conditions. The degree of accordance of the HMM outputs and the training data is examined based on calculated statistical scoring indicators.     

Single and multiple satellite visibility statistics of first-generation non-GEO constellations for personal communications

The first generation of global satellite systems for personal and mobile communications is preparing to start commercial services. Service quality and availability are paramount to the user's acceptance of the service. For satellite systems, service quality and availability build up from satellite visibility, propagation conditions and equipment availability. This paper discusses the impact of elevation angle on visibility and propagation, that of azimuth separation between visible satellites, and compares multiple visibility statistics of all first-generation non-geostationary communications systems, namely Iridium, Globalstar, ICO, Ellipso and ECCO. © 1998 John Wiley & Sons, Ltd.     

一体化的信号源分析仪

与美国同行争分夺秒抢占市场先机不同,欧洲测量仪器厂商Rohde&Schwarz公司的产品策略则相对稳健,他们的产品更专注于功能的多样化