Effect of Additives on the Electromechanical Properties of Pb(Zr,Ti)O3–Pb(Y2/3W1/3)O3 Ceramics

Dielectric and piezoelectric properties of 0.02Pb(Y_2/3W_1/3)O₃ 0.98Pb(Zr0.52Ti0.48)O3 ceramics doped with additives (Nb₂O₅, La₂O₃, MnO₂, and Fe₂O₃) were investigated. The grain sizes of these ceramics decreased with increasing amounts of additives. For additions of MnO₂ and Fe₂O₃, dielectric losses decreased, while for Nb₂O₅ and La₂O₃, these values increased. The maximum values of the mechanical quality factor Q_m were found to be 956 and 975 for additions of 0.9 wt% Fe₂O₃ and 0.7 wt% MnO₂, respectively, but donor dopants (Nb₂O₅ and La₂O₃) did not change the values of Q_m . On the other hand, the piezoelectric constant d₃₃ and the electromechanical coupling factor k_p decreased with additions of MnO₂ and Fe₂O₃, but improved with additions of Nb₂O₅ and La₂O₃.     

Effects of chemical additives on high-field electromechanical properties of PMN–PT–BT ceramics

A chemical additive method using sol–gel reactions was used to modify the composition and resultant properties of a commercially available 0.96(0.91Pb(Mg_1/3Nb_2/3)O₃–0.09PbTiO₃)–0.04 BaTiO₃ (PMN–PT–BT) ceramic. Without an additional ball-mixing process, several combinations of minor additives such as Fe, Ba, Sr, Zn, and Ti were incorporated by the chemical method. Weak- and high-field characteristics including dielectric properties, induced strain and polarization, and associated hystereses were evaluated for the samples sintered at 1200 °C for 4 h. All properties were found to depend on the chemical additives and temperature. Especially, the temperature dependence of high-field characteristics revealed different behavior from that reported for conventionally prepared samples. For example, the samples containing 0.5 wt.% SrO, 0.5 wt.% ZnO, and 0.5 wt.% TiO₂ did not exhibit a transition to piezoelectric behavior at the temperature expected from the dielectric measurements. Overall, the coating process has been successfully used to modify, and in some cases, enhance the high-field characteristics of PMN-based ceramics for electromechanical uses.     

Interfacial adhesion reaction of polyethylene and starch blends using maleated polyethylene reactive compatibilizer

The interfacial reaction of the polyethylene (PE)/starch blend system containing the reactive compatibilizer maleated polyethylene (m‐PE) was directly characterized by Fourier transform infrared (FTIR) spectroscopy. A significant amount of anhydride groups on m‐PE existed as hydrolyzed forms, resulting in a large amount of carboxyl groups. Using a vacuum‐heating‐cell designed in the laboratory, the carboxyl groups were successfully transformed into the dehydrolyzed state (i.e., anhydride group). This result enabled the direct spectroscopic observation of chemical reaction occurring at the interface. For the PE/starch blend system containing m‐PE, the chemical reaction at the interface was verified by the evolution of ester and carboxyl groups in the FTIR spectra. The effect of the reactive compatibilizer on the interfacial morphology was also examined by scanning electron micrography (SEM). Enhanced interfacial adhesion was clearly observed for the blend system containing reactive compatibilizer. Tensile strengths of blend systems containing m‐PE also increased noticeably compared with the corresponding system without compatibilizer. A similar observation was made for the breaking elongation data. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 83: 767–776, 2002     

Investigation into etching mechanism of polyethylene terephthalate (PET) films treated in helium and oxygenated‐helium atmospheric plasmas

This research makes an investigation into the etching mechanism of atmospheric plasma conditions on the surface of polyethylene terephthalate (PET) films. Two types of untreated PET films (S/200 and S/500) were exposed to plasma for 0 to 5.0 min in 30‐s increments. The first set of each film type was treated in helium plasma, while the second was treated in oxygenated‐helium plasma. Differential Scanning Calorimetry (DSC) was used to characterize pre‐ and post‐exposure films. Weight changes and the degree of solubility were also determined. Based on peak area results, the percent crystallinity of PET S/200 increased by an average of 4.57% (helium treated) and 13.56% (oxygenated‐helium treated), while the S/500 showed only a small increase. There was no significant change in the melting or crystallization temperatures of either film type, indicating a decrease in amorphous content versus an increase in crystalline material. Weight loss analysis supports this theory. Solubility testing revealed a continual decrease in swelling as exposure time was increased. A model was developed to predict the change in the degree of solubility for polyphase surfaces considering the etching rate per phase. The model was applied to PET with good correlation between the model and experimental data. © 2004 Wiley Periodicals, Inc. J Appl Polym Sci 94: 2383–2389, 2004     

Boron distribution in a low-alloy steel

Boron distribution in a low-alloy steel (15B26:0.25C-0.29Cr-0.03Ti-0.028Al-0.0016B) has been characterized employing Fission Track Etching (FTE) method. The characteristics of boron distribution with variation of cooling rate after austenitization and through case-hardened depth after carburization were analyzed. Hardenability of 15B26 steel was also evaluated through Jominy-end-quench test and the results are as follows: It was observed that, in austenitized 15B26 steel, boron was distributed uniformly over the whole area of specimen with a little segregation along the austenite grain boundaries at higher cooling rates and boron precipitates were formed in the intergranular as well as transgranular regions at lower cooling rates. Jominy equivalents (HRC 35) of 15B26 steel were fairly increased between the Jominy temperatures of 820°C and 850°C, which might result from the increase of the amount of soluble boron in austenite due to the dissolution of borocarbides between 820°C and 850°C. In carburized 15B26 steel, the different through thickness features of boron distribution from the carburized surface were found; coarse nodular boron precipitates up to the depth of 150 μm; uniform distribution of dissolved boron between 150~650 μm; and segregation of boron atoms along grain boundaries in the regions deeper than 650 μm.     

Characteristics of ZnO thin film deposited on various metal bottom electrodes

ZnO films for electronic applications were deposited by radio-frequency (rf) sputtering onto various metal bottom electrodes (Pt/Ti, W, Ni) to investigate such structural properties as crystallinity and surface morphology. The crystallinity, surface morphology and composition of the as-deposited films were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) and Rutherford back-scattering spectrometry (RBS), respectively. The preferred orientation and surface morphologies were strongly influenced by the type of bottom electrodes. The ZnO films with (200) texturing deposited on Pt/Ti/SiO₂/Si showed a smoother and smaller grain size than those deposited on W and Ni. The ZnO films on Pt and W electrodes exhibited compressive residual stress. This article is based on a presentation made in the 2002 Korea-US symposium on the “Phase Transformations of Nano-Materials”, organized as a special program of the 2002 Annual Meeting of the Korean Institute of Metals and Materials, held at Yonsei University, Seoul, Korea on October 25–26, 2002.     

Corrosion resistance of austenitic stainless steel separator for molten carbonate fuel cell

STS310S and SC-STS310S (simultaneously co-deposited chromium and aluminum onto 310S austenitic stainless steel substrate by pack-cementation process) were used as separator materials on the cathode side of a molten carbonate fuel cell. With the STS310S, corrosion proceeded via three steps; a formation step of unstable corrosion product, a protection step against corrosion until breakaway, and an advance step of corrosion after breakaway. The final corrosion product was LiFeO₂ and the loss of mass was 6.5 mg/cm² after a corrosion test of 480 hr at 650°C. The SC-STS310S showed more effective corrosion resistance, however, than did common STS310S. There was especially no corrosion loss on the SC-STS310S after the 480 hr corrosion test. It is anticipated that it will be very useful as an alternative separator on the cathode side off the MCFC in the future.     

The preparation of tantalum powder using a MR-EMR combination process

In the conventional metallothermic reduction (MR) process used to obtain tantalum powder in batch-type operation, it is difficult to control the morphology and location of the tantalum deposits. In contrast, an electronically mediated reaction (EMR) process is capable of overcoming this difficulty. It has the advantage of being a continuous process, but has the disadvantage of a poor reduction yield. A process known as the MR-EMR combination process is able to overcome the shortcomings of the MR and EMR processes. In this study, an MR-EMR combination process is applied to the production of tantalum powder via sodium reduction of K₂TaF₇. In the MR-EMR combination process, the total charge passed through an external circuit and the average particle size (FSSS) increase as the reduction temperature increases. In addition, the proportion of fine particles (−325 mesh) decreases as the reduction temperature increasess. The tantalum yield improved from 65 to 74% as the reduction temperature increased. Taking into account the charge, impurities, morphology, particle size and yield, a reduction temperature of 1123 K was found to be optimum for the MR-EMR combination process.     

Low-energy ion beam treatment of α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript>(0001) and improvement of photoluminescence of ZnO thin films

A low energy N₂ ^? ion beam impinged on a α-Al₂O₃(0001) single crystal surface in the range of fluence 5×10¹⁵/cm²?1×10¹⁸/cm² at room temperature. After ion bombardment, chemical bonding on the modified sapphire surface was investigated by x-ray photoelectron spectroscopy. Below a fluence of 1×10¹⁵/cm², only a non-bonded N1s peak at the binding energy 398.7 eV was found, but further irradiation up to 2×10¹⁷/cm² induced Al?O?N bonding at around 403 eV. The occurrence of Al?N bonding was identified at ion fluence higher than 5×10¹⁷/cm² at 396.6 eV. II–VI ZnO thin films were grown on an untreated/ion-beam-induced sapphire surface by pulsed laser deposition (PLD) for the investigation of the modified-substrate effect on photoluminescence. The ZnO films grown on modified sapphire containing Al?O?N bonding only, and both Al?O?N and Al?N bonding showed a significant reduction of the peak related to deep-level defects in photoluminescence. These results are explained in terms of the formation of Al?N?O and Al?O?N layers and relaxation of the interfacial strain between Al₂O₃ and ZnO.