Explicit Self-Regulated Strategy Development Versus Reciprocal Questioning: Effects on Expository Reading Comprehension Among Struggling Readers.

The effects of 2 rigorous strategic approaches to reading comprehension for 32 5th-grade students who struggle with reading were investigated. The first approach, TWA (Think before reading, think While reading, think After reading), was taught following explicit self-regulated strategy development instructional procedures (K. R. Harris & S. Graham. 1999). The second approach, reciprocal questioning (RQ), was taught following Cooperative ReQuest procedures developed by A. V. Manzo. U. C. Manzo, and T. H. Estes (2001). Compared with RQ students, TWA students improved significantly (with medium to large effect sizes) on 5 oral reading comprehension measures. There were no significant differences, however, between groups on 3 written comprehension measures, self-efficacy, or motivation. Students were positive about each intervention. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

1.6 Tbit/s (40/spl times/40 Gbit/s) DPSK transmission over 3/spl times/100 km of TeraLight fibre with direct detection

By transmitting 40 channels over 300 km of TeraLight fibre, it is shown that optical differential phase shift keying can be used in 100 GHz-spaced 40 Gbit/s systems, with direct detection and a simple receiving filter. Chromatic dispersion tolerance around 300 ps/nm is also measured, compared to 70 ps/nm for NRZ.     

Nanoweb Formation: 2D Self‐Assembly of Semiconductor Gallium Oxide Nanowires/Nanotubes

This paper reports a method to produce networks of crystalline gallium oxide comprised of one‐dimensional (1D) nanostructures. Because of the unique arrangement of wires, these crystalline networks are termed as ‘nanowebs’. Nanowebs are of great technological interest since they contain wire densities of the order of 10⁹ cm^–2. A possible mechanism for the fast self‐assembly of crystalline metal oxide nanowires involves multiple nucleation and coalescence via oxidation–reduction reactions at the molecular level. The preferential growth of nanowires parallel to the substrate enabled them to coalesce into regular polygonal networks. The individual segments of the polygonal network consist of both nanowires and nanotubules of β‐gallium oxide. Individual wire properties contribute to a nanoweb’s overall capacity and the implications for devices based on nanowebs are expected to be enormous.     

QoS provisioning in cellular networks based on mobility prediction techniques

In cellular networks, QoS degradation or forced termination may occur when there are insufficient resources to accommodate handoff requests. One solution is to predict the trajectory of mobile terminals so as to perform resource reservations in advance. With the vision that future mobile devices are likely to be equipped with reasonably accurate positioning capability, we investigate how this new feature may be used for mobility predictions. We propose a mobility prediction technique that incorporates road topology information, and describe its use for dynamic resource reservation. Simulation results are presented to demonstrate the improvement in reservation efficiency compared with several other schemes.     

Formation of C49-TiSi2 in flash memories: a nucleation controlled phenomenon?

The formation of Ti silicides has been examined in flash memories with 0.25 μm linewidth by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. It has been observed that, after the first rapid thermal process and the selective metal etch, there is no silicide on the source and on a majority of drain contacts while C49-TiSi₂ is found on the gate. A pre-amorphisation implant increases drastically the formation of C49-TiSi₂ in the drain zone while modifications of annealing conditions have little impact. These results indicate that the formation of C49-TiSi₂ is most likely controlled by nucleation and that this nucleation is sensitive to both the width and the length of the reaction zone. The formation of a Ti rich silicide may play an important role in this nucleation by decreasing the driving force for the formation of C49-TiSi₂. Curiously enough, the formation of C49-TiSi₂ appears thus as a major concern for the salicide process in flash memories.     

High‐Performance,Monolithic Polyaniline Electrochemical Actuators

New polyaniline (PANI) asymmetric membranes were fabricated using a phase‐inversion technique with hexane as the coagulation bath. These membranes exhibit a dense structure with macrovoids distributed asymmetrically throughout the cross‐section. A stress–strain study demonstrated that the Young's modulus (1.421 GPa) and strain at break (7.6 %) of the new PANI asymmetric membranes prepared from hexane are approximately 12 and 4 times higher, respectively, than the values reported previously for the PANI integrally skinned asymmetric membranes (ISAMs) (123 MPa Young's modulus and 1.8 % strain at break). Furthermore, monolithic electrochemical actuators based on a single PANI asymmetric membrane were constructed, and a bending movement of up to 20 Hz was experimentally recorded in a hydrochloric acid aqueous solution. A lifetime of over 329 500 cycles was determined for these actuators at a ± 2° angular displacement (5 Hz). The lifetime is limited by a bending fatigue that creates a transversal crack on the PANI membrane at the air–water interface. Control over the actuator movement is also manifested by the linear dependences of the bending angle on the charge and of the angular velocity on the current. These relationships are independent of both the kind of applied electric signal and the frequency used.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.