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991.
992.
An analog front‐end circuit for ISO/IEC 14443‐compatible radio frequency identification (RFID) interrogators was designed and fabricated by using a 0.25 µm double‐poly CMOS process. The fabricated chip was operated using a 3.3 Volt single‐voltage supply. The results of this work could be provided as reusable IPs in the form of hard or firm IPs for designing single‐chip ISO/IEC 14443‐compatible RFID interrogators. 相似文献
993.
The notion of pseudorandomness is the theoretical foundation on which to consider the soundness of a basic structure used in some block ciphers. We examine the pseudorandomness of the block cipher KASUMI, which will be used in the next‐generation cellular phones. First, we prove that the four‐round unbalanced MISTY‐type transformation is pseudorandom in order to illustrate the pseudorandomness of the inside round function FI of KASUMI under an adaptive distinguisher model. Second, we show that the three‐round KASUMI‐like structure is not pseudorandom but the four‐round KASUMI‐like structure is pseudorandom under a non‐adaptive distinguisher model. 相似文献
994.
995.
996.
997.
T.‐S. Kang B.S. Harrison M. Bouguettaya T.J. Foley J.M. Boncella K.S. Schanze J.R. Reynolds 《Advanced functional materials》2003,13(3):205-210
Near‐infrared‐emitting electroluminescent (EL) devices using blue‐light‐emitting polymers blended with the Yb complexes Yb(DBM)3phen (DBM = dibenzoylmethane), Yb(DNM)3phen (DNM = dinaphthoylmethane), and Yb(TPP)L(OEt) (L(OEt) = [(C5H5)Co{P(O)Et2}3]–) have been studied. EL devices composed of Yb(DNM)3phen blended with PPP‐OR11 showed enhanced near‐IR output at 977 nm when compared to those fabricated with Yb(DBM)3phen/PPP‐OR11 blends. The maximum near‐IR external efficiencies of the devices with Yb(DBM)3phen and Yb(DNM)3phen are, respectively, 7 × 10–5 (at 6 V and at 0.81 mA mm–2) and 4 × 10–4 (at 7 V, and 0.74 mA mm–2). The optimal blend composition for EL device performance consisted of PPP‐OR11 blended with 10–20 mol‐% Yb(DNM)3phen. A device fabricated using Yb‐(TPP)L(OEt)/PPP‐OR11 showed significantly enhanced near‐IR output efficiency, and future efforts will focus on devices fabricated using porphyrin‐based materials. 相似文献
998.
999.
Pretreatment of high manganese hot metal is suggested to produce hot metal suitable for further processing to steel in conventional LD converter and rich manganese slags satisfy the requirements for the production of silicomanganese alloys. Manganese distribution between slag and iron represents the efficiency of manganese oxidation from hot metal. The present study has been done to investigate the effect of temperature, slag basicity and composition of oxidizer mixture on the distribution coefficient of manganese between slag and iron. Ferrous oxide activity was determined in molten synthetic slag mixtures of FeO‐MnO‐SiO2–CaO–MgO‐Al2O3. The investigated slags had chemical compositions similar to either oxidizer mixture or slags expected to result from the treatment of high manganese hot metal. The technique used to measure the ferrous oxide activity in the investigated slag systems was the well established one of gas‐slag‐metal equilibration in which molten slags contained in armco iron crucibles are exposed to a flowing gas mixture with a known oxygen potential until equilibrium has been attained. After equilibration, the final chemical analysis of the slags gave compositions having a particular ferrous oxide activity corresponding to the oxygen potential of the gas mixture. The determined values of ferrous oxide activity were used to calculate the equilibrium distribution of manganese between slag and iron. Higher manganese distribution between slag and iron was found to be obtained by using oxidizer containing high active iron oxide under acidic slag and relatively low temperature of about 1350°C. 相似文献
1000.
P. Kundu K.R. Justin Thomas J.T. Lin Y.‐T. Tao C.‐H. Chien 《Advanced functional materials》2003,13(6):445-452
A series of dicarbazolyl derivatives bridged by various aromatic spacers and decorated with peripheral diarylamines were synthesized using Ullmann and Pd‐catalyzed C–N coupling procedures. These derivatives emit blue light in solution. In general, they possess high glass‐transition temperatures (Tg > 125 °C) which vary with the bridging segment and methyl substitution on the peripheral amine. Double‐layer organic light‐emitting devices were successfully fabricated using these molecules as hole‐transporting and emitting materials. Devices of the configuration ITO/HTL/TPBI/Mg:Ag (ITO: indium tin oxide; HTL: hole‐transporting layer; TPBI: 1,3,5‐tris(N‐phenylbenzimidazol‐2‐yl)benzene) display blue emission from the HTL layer. The EL spectra of these devices appear slightly distorted due to the exciplex formation at the interfaces. However, for the devices of the configuration ITO/HTL/Alq3/Mg:Ag (Alq3 = tris(8‐hydroxyquinoline)aluminum) a bright green light from the Alq3 layer was observed. This clearly demonstrates the facile hole‐transporting property of the materials described here. 相似文献