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101.
102.
概述了美国几种较成熟的热煤气脱硫吸附剂的配方、制备技术及吸附剂在若干试验条件下强度、活性、寿命等宏观特性的测试结果。 相似文献
103.
Q Wang S Zhong J Ouyang L Jiang Z Zhang Y Xie S Luo 《Canadian Metallurgical Quarterly》1998,(348):259-268
Culture selected and expanded osteoblastic cells may be able to be reintroduced into massive skeletal defects to accelerate cell mediated regeneration of skeletal tissues, especially in bone ingrowth in total joint replacement, fracture healing, and osteoporosis. In vitro osteogenic cell culture is a useful model in studying the mechanism of bone metabolism under direct current stimulation. In this study, an osteoblastlike cell line was isolated from newborn rat calvaria. The osteogenic processes of the in vitro cultured cell line were studied by cytochemical, electron microscopic, and energy dispersive x-ray analysis techniques that resembled those observed in membrane bone ossification centers in vivo. Direct current stimulation of 100 microA/cm2 accelerated greatly the proliferation and calcification of the in vitro cultured cells. Intracellular free calcium ion metabolism was measured with an Adherent Cell Analysis and Sorting Machine. Under direct current stimulation, intracellular free calcium ion concentration increased an average of 2.3 times of the original level, which may play a key role in regulating osteogenesis and bone metabolism. 相似文献
104.
In an assembly line of a just-in-time (JIT) production system, workers have the power and the responsibility to stop the line when they fail to complete their operations within their work zones. This paper deals with a sequencing problem for the mixed-model assembly conveyor line in the JIT production system. In some environment, the most important criterion is the line stoppage rather than the variation of production rates. The problem is to find an optimal sequence of units that minimizes the total line stoppage time. Lower and upper bounds of the total line stoppage time are derived and the branch-and-bound method is applied to the problem. A numerical example is given. 相似文献
105.
Coating of Silicon Nitride and its Colloidal Behavior 总被引:2,自引:0,他引:2
Qiang Tang Zhipeng Xie Jinglong Yang Yong Huang 《Journal of Materials Science Letters》1998,17(14):1239-1241
106.
107.
研究了温度及气体压力对漂移室(工作于正比区)气体放大倍数的影响,温度和气体压力的变化范围分别是5 ̄40℃及90 ̄105kPa。用实验数据拟合得到了函数关系并测量了几种饱和度下函数中的参数值。 相似文献
108.
109.
从SAN(存储区域网)的安全隐患出发,分析了SAN在应用环境中受到的三种典型威胁。结合现行的入侵检测技术给出一个可行的解决方案。 相似文献
110.
E. A. Fitzgerald Y. -H. Xie D. Brasen M. L. Green J. Michel P. E. Freeland B. E. Weir 《Journal of Electronic Materials》1990,19(9):949-955
We have grown Ge x Si1-x (0 <x < 0.20,1000–3000Å thick) on small growth areas etched in the Si substrate. Layers were grown using both molecular beam epitaxy (MBE) at 550° C and rapid thermal chemical vapor deposition (RTCVD) at 900° C. Electron beam induced current images (EBIC) (as well as defect etches and transmission electron microscopy) show that 2800Å-thick, MBE Ge0.19Si0.81 on 70-μm-wide mesas have zerothreading and nearly zero misfit dislocations. The Ge0.19Si{0.81} grown on unpatterned, large areas is heavily dislocated. It is also evident from the images that heterogeneous nucleation of misfit dislocations is dominant in this composition range. 1000Å-thick, RTCVD Ge0.14Si0.86 films deposited on 70 μm-wide mesas are also nearly dislocation-free as shown by EBIC, whereas unpatterned areas are more heavily dislocated. Thus, despite the high growth temperatures, only heterogeneous nucleation of misfit dislocations occurs and patterning is still effective. Photoluminescence spectra from arrays of GeSi on Si mesas show that even when the interface dislocation density on the mesas is high, growth on small areas results in a lower dislocation density than growth on large areas. 相似文献