全文获取类型
收费全文 | 115004篇 |
免费 | 3836篇 |
国内免费 | 1838篇 |
专业分类
电工技术 | 2664篇 |
技术理论 | 3篇 |
综合类 | 4302篇 |
化学工业 | 16717篇 |
金属工艺 | 6930篇 |
机械仪表 | 4977篇 |
建筑科学 | 4879篇 |
矿业工程 | 1406篇 |
能源动力 | 1901篇 |
轻工业 | 5883篇 |
水利工程 | 1860篇 |
石油天然气 | 2218篇 |
武器工业 | 253篇 |
无线电 | 12718篇 |
一般工业技术 | 20074篇 |
冶金工业 | 3897篇 |
原子能技术 | 557篇 |
自动化技术 | 29439篇 |
出版年
2024年 | 118篇 |
2023年 | 525篇 |
2022年 | 889篇 |
2021年 | 1374篇 |
2020年 | 1086篇 |
2019年 | 820篇 |
2018年 | 15235篇 |
2017年 | 14303篇 |
2016年 | 10764篇 |
2015年 | 1839篇 |
2014年 | 1722篇 |
2013年 | 2060篇 |
2012年 | 5185篇 |
2011年 | 11501篇 |
2010年 | 10223篇 |
2009年 | 7335篇 |
2008年 | 8454篇 |
2007年 | 9499篇 |
2006年 | 1802篇 |
2005年 | 2759篇 |
2004年 | 2189篇 |
2003年 | 2122篇 |
2002年 | 1490篇 |
2001年 | 861篇 |
2000年 | 1033篇 |
1999年 | 963篇 |
1998年 | 774篇 |
1997年 | 606篇 |
1996年 | 616篇 |
1995年 | 446篇 |
1994年 | 372篇 |
1993年 | 286篇 |
1992年 | 243篇 |
1991年 | 170篇 |
1990年 | 100篇 |
1989年 | 92篇 |
1988年 | 82篇 |
1987年 | 40篇 |
1986年 | 34篇 |
1968年 | 43篇 |
1967年 | 33篇 |
1966年 | 42篇 |
1965年 | 44篇 |
1960年 | 30篇 |
1959年 | 35篇 |
1958年 | 37篇 |
1957年 | 36篇 |
1956年 | 34篇 |
1955年 | 63篇 |
1954年 | 68篇 |
排序方式: 共有10000条查询结果,搜索用时 640 毫秒
71.
Shi-Jin Ding Hang Hu Lim H.F. Kim S.J. Yu X.F. Chunxiang Zhu Li M.F. Byung Jin Cho Chan D.S.H. Rustagi S.C. Yu M.B. Chin A. Dim-Lee Kwong 《Electron Device Letters, IEEE》2003,24(12):730-732
For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications. 相似文献
72.
73.
74.
A.L. Pan H.G. ZhengZ.P. Yang F.X. Liu Z.J. Ding Y.T. Qian 《Materials Research Bulletin》2003,38(5):789-796
Small Ag particles or clusters dispersed mesoporous SiO2 composite films were prepared by a new method: First the matrix SiO2 films were prepared by sol-gel process combined with the dip-coating technique, then they were soaked in AgNO3 solutions followed by irradiation of γ-ray at room temperature and in ambient pressure. The structures of these films were examined by X-ray diffraction (XRD), high-resolution transmission electron microscope (HRTEM), and optical absorption spectroscopy. It has been shown that the Ag particles grown within the porous SiO2 films are very small, and they are isolated and dispersed from each other with very narrow size distributions. With increasing the soaking concentration and an additional annealing, an opposite peakshift effect of the surface plasmon resonance (SPR) was observed in the optical absorption measurements. 相似文献
75.
多臂井径成像测井技术 总被引:2,自引:2,他引:0
多臂井径成像测井技术同以往的40臂、X—Y井径等非成像工程测井相比具有较为明显的优势,不但可以做定量解释提供最大、最小、平均井径值,而且可以提供更为直观的18条或36务独立的测井曲线、磁井径,磁重量、井温、井壁立体图、井壁成像图、井壁截面图,为检测井下套管的完好性及修复提供了更为可靠直观的资料,满足了地质学家及时监测套管状况的要求,也为油井作业、大修提供全面、准确的套管全貌。文章介绍了18臂、36臂两种井径成像测井技术。并通过对测试资料实例的解释、分析、研究,总结了多臂井径成像测井技术的特点及应用效果。 相似文献
76.
77.
Dong-Soo Yoon Jae Sung Roh Sung-Man Lee Hong Koo Baik 《Journal of Electronic Materials》2003,32(8):890-898
The effect of a thin RuOx layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuOx/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si
contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuOx/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no
formation of a thin RuOx layer at the RuOx surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film
by pre-annealing leads to the formation of a thin RuOx layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity
of diffusion paths. In particular, the RuOx layer in a nonstoichiometric state is changed to the RuO2-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer.
Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the
RuOx/TiN/poly-Si/Si contact system. 相似文献
78.
用保角变换法对共面波导金属厚度效应进行了理论分析,编制了相应的计算机程序,给出了数值解,并对此进行了多元曲线拟合,导出了考虑金属厚度后的形状比k、有效介电常数、特征阻抗、损耗的闭定表达式。用此修正表达式求得特征阻抗及损耗的数值解,并与K.C.格普塔的修正值及实验测量值进行了详细比较,结果表明此修正公式与实验值相符较好。 相似文献
79.
80.
Ting Gang Zhu Uttiya Chowdhury Michael M. Wong Jonathan C. Denyszyn Russell D. Dupuis 《Journal of Electronic Materials》2002,31(5):406-410
In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky
rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers
grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5
V at 100 A/cm2 are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage
in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm2, and a forward-voltage drop of 3.5 V at a current density of 100 A/cm2. It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC
substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge
terminations in mesageometry GaN Schottky rectifiers has also been studied. 相似文献