化学镀SiCp／Ni－P复合镀层与基体结合强度及其影响因素

论述了ＳｉＣｐ／Ｎｉ－Ｐ复合镀层与钢基体的结合强度及其影响因素。复合镀层中离界面５μｍ厚度以内区域的组成及应力状态对镀层／基体的界面结合有决定性作用，在该区域以外ＳｉＣ粒径变化不影响镀层的结合强度。适当的热处理可提高界面结合力。     

重油纳米化助燃效果研究与表征

将复配的分散剂加入重油中制备得到重油纳米颗粒，采用氧弹热值对比法对所研制的纳米化重油进行实验室评价。研究结果表明，纳米化后的重油燃烧性能得到了改善，在掺水量为3％～12％时，重油的燃烧效率提高了2．5％～6．1％。通过TEM观察，纳米化后的重油呈水包油（O／W）型乳液结构，油水界面清晰，界面膜较厚，乳化油粒径约为20～50nm，油水分散均匀，并且分散后的重油粘度增幅小，掺水量在15％以内，粘度增幅不超过20％，并且随着掺水量的增加，乳化重油的粘度逐渐减少。另外，乳化重油稳定性好，室温下至少可保存6个月，在80℃下存放3天未发生破乳现象。     

非化学计量LaNi5型储氢合金的性能

采用富La混合稀土与Ni、Co、Mg等元素组合，获得了一种非化学计量LaNi5型储氢合金、用金相、XRD和SEM-EDX等方法分析了该合金的组织结构，研究了合金的气相储氢特性以及电化学性能，结果表明：在1.6MPa氢压和温度29℃下，该合金的储氢量达到1.58%（质量分数），该合金的放电容量为380mAh/g。经300次循环后容量保持率为55%，该合金的基体是CaCu5型结构的LaNi5相，但有第二相（LaMg)Ni3析出，这种第二相的形成是导致该合金大容量的关键。     

In—situ Composite Based on Poly （ethylene terephthalate）,Polyamide and Polyethylene with Microfibres Formed through Extrusion and Hot Stretching

In-situ composites based on dispersed poly (ethylene terephthalate) (PET) or polyamide (PA),and continuous Polyethylene (PE) were prepared through a single screw extruder of Haake rheometer system with a rod-die relatively small in diameter.The extrudate was drawn at a drawing ratio of 3.1,and then quickly cooled in cold water.The specimens were obtained by injection molding at processing temperatures less than 190℃，far below the melting temperature of PET (265℃) and PA (230℃),which can maintain the solid state of PET and PA microfiber phase in the composites.Morphological observation with scanning electron microscopy (SEM) indicated that PET and PA can more or less form in-situ microfibers at compositions studied (0-20 wt pct PET or PA),and especially,PET and PA were almost deformed into fibers at the concentration of 15wt pct.Eensile strength and especially.PET and PA were almost deformed into fibers at the concentration of 15wt pct.Tensile strength and modulus of the blends reinforced by PET or PA microfibers showed to be increased from the tensile test results.The most noticeable improvement of the tensile properties occurred at 15wt pct of PET in PET/PE system,corresponding to the highest microfiber content,where the tensile strength reached 32.5 MPa,whereas only 19.5 MPa for the pure PE.     

应用底饲回燃循环流化床技术改造东锅DG35/3.82-7型流化床锅炉

采用飞灰循环底饲回燃技术改造西南合成制药总厂热电分厂、天府矿务局磨心坡发电厂2台东方DG35/3.82-7型低倍率循环流化床锅炉。改造后运行结果表明,锅炉可长期、稳定运行,尾部飞灰可燃物含量大幅度降低,锅炉蒸发量提高20％左右,节煤效果明显。为燃用贫煤、无烟煤和煤矸石等劣质燃料且锅炉炉膛高度较低的电站技改,提供了一种切实可行的方法。     

新一代银行大型机网络接入技术研究

银行大型机网络接入技术的转型是当前一个非常重要的研究与应用课题。文章在成功实现银行大型机网络接入技术转型的基础上,分析了相关新技术,解决了转型中的关键问题,提出并实现了一种稳定高效的银行大型机网络接入技术方案,对银行大型机网络接入技术的转型具有指导意义,对银行信息化技术研究具有重要参考价值。     

中国的主要水问题及水文学的机遇

从水资源开发利用与保护、水旱灾害防治等方面论述中国当前存在的主要水问题：水危机和水浪费同时存在、水污染日趋严重、防洪减灾任重道远、生态环境破坏严重、全球气候变暖产生不利影响；进而论述水文学研究面临的新课题：水文现象的不确定性、人类活动对水文的影响、水位频率计算、水资源开发利用的最佳效应、水资源供需分析、农业节水灌溉机理及水旱灾害的防治，并指出必须加强对这些新课题的研究     

均衡营养早餐的研制

根据膳食营养的要求,以燕麦、爆裂玉米、奶粉、鸡胸肉、胡萝卜和香菜为原料,采用微波技术和冷冻干燥技术生产均衡营养早餐,确定了最佳的配方为燕麦片15g、爆裂玉米8g、奶粉10g、鸡肉丁5g、胡萝卜丁0.5g、香菜干0.5g、盐或糖1g.     

基于S-CDMA的HFC上行信道接入协议性能仿真分析

讨论了基于S－CDMA的HFC网上行信道的高效接入协议－SAMA，提出了双信道接入机制的工作原理，并对系统性能进行了分析与计算机仿真，得到一些有意义的结论。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.