氨精制装置运行问题分析及改造措施

通过分析中国石油兰州石化分公司炼油厂氨精制装置存在的运行问题,提出了相应的改造措施,包括在分凝器脱液管线上新增隔离阀门、更换三级冷凝冷却器、更换氨压缩机及采用低温结晶脱硫工艺等。改造后装置运行结果表明:三级分凝器出口温度由70℃降至小于35℃,压缩机吸气量由5 m3/m in提高至74 m3/m in,原料酸性水中硫化氢质量分数下降45.5%,氨质量分数下降55.5%,净化水合格率达100%,氨精制塔塔顶温度下降5~20℃,液氨中氨质量分数由97.05%上升至99.60%,液氨产量达0.125 t/h,实现了装置的长周期运行。     

石油沥青60℃动力粘度测定影响因素的探讨

粘度是表征沥青稠度的一个重要指标。通过论述石油沥青粘度测定法(真空毛细管法)中毛细管的选择、温度、真空度、取样量等对试验结果的影响及试验过程中的其它注意事项,表明了在测定石油沥青的60℃动力粘度时,必须严格按照试验方法的要求进行测定,以保证试验结果的准确性。     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

线性调频的脉冲压缩雷达视频信号仿真

利用数字方法实现线性调频的脉冲压缩雷达视频目标模拟信号具有诸多优点：信号模拟的精度高，灵活性好，幅度、相位补偿方便，可以模拟复杂情况，系统结构简单，可靠性高，可扩展性强。详细介绍了基于FPGA设计线性调频的脉冲压缩雷达视频目标模拟信号的原理、结构、具体实现以及简要的性能分析。结果表明该方案性能良好，具有现实可实现性。     

溶剂对环氧乙烷催化水合制乙二醇的影响

研究了NY催化剂催化环氧乙烷水合制乙二醇(EG)过程中,溶剂、催化剂添加量和水与环氧乙烷的摩尔比(简称水比)对EG选择性的影响。实验结果表明,以丙三醇作为溶剂使催化剂进行循环,能提高EG的选择性,效果好于以生成的EG作为溶剂循环催化剂。催化剂添加量、水比和溶剂添加量对EG选择性具有较大影响,其中溶剂添加量对EG选择性的影响最显著。在低水比(1.0~4.0)条件下,EG质量分数小于30%、催化剂质量分数大于7.2%时,EG选择性稳定在95.63%~97.92%,平均值为96.80%,此结果对于进一步降低EG合成工艺的能耗具有指导意义。     

硝基NPK复合肥的生产技术与市场前景

论述了硝基NPK复合肥生产的基本原理、生产特点、工艺设计、消耗定额以及市场与效益分析。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

热作模具钢表面激光堆焊耐磨合金层的研究

本文主要通过在H13钢上用大功率CO_2激光束进行堆焊,阐述了激光堆焊工艺变化对堆焊组织和性能的影响,在本试验条件下,得到了高密度弥散金属化合物组织的激光堆焊层,平均硬度为HV800,与基体呈冶金结合,耐磨性比H13模具钢提高149%。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.