电源对介质阻挡放电(DBD)激发准分子(XeCl*)辐射的影响

本文对电源参数如电压幅值、频率及正负电压对介质阻挡放电激发准分子XeCl 紫外 (30 8nm)辐射的影响进行了实验研究。结果表明 ,UV辐射随电压幅度的增加而增强 ,但效率下降 ;提高频率 ,增加了放电次数 ,导致UV辐射的增强 ;此外 ,在较高的频率下 ,电压上升沿变陡 ,使得电子获得的能量主要用于原子的激发和电离。正、负电压放电的不对称源于电极结构的不对称而引起的放电过程的差异 ,负电压内电极可向放电管中馈入更多的能量 ;比较发光光谱可判断生成准分子的等离子体化学过程没有明显的差别     

钒钛渣对刚玉莫来石耐火材料的侵蚀研究

通过不同温度下钒钛渣对刚玉莫来石耐火材料的侵蚀实验，分析了炉渣、温度对材料的影响，认为致密结构、低气孔率是提高炉衬寿命的关键，板条状莫来石的存在利于减缓渣的侵蚀过程。     

电炉钢外来夹杂控制的研究

介绍了夹杂物的来源,包括内生夹杂和外来夹杂,着重于二次氧化产物、卷渣、内衬侵蚀.同时介绍了鄂钢电炉厂在冶炼和连铸过程中控制夹杂物的操作实践.     

The Silicon Backplane Design for an LCOS Polarization-Insensitive Phase Hologram SLM

Polarization-insensitivity is achieved in a reflective spatial light modulator by laying a quarter-wave plate (QWP) at the incident wavelength directly over the mirror pixels of a silicon backplane, and forming a nematic Freedrickcz cell over the QWP to modulate the reflected phase. To achieve the highest drive voltage from the available silicon process, a switched voltage common front electrode design is described, with variable amplitude square wave drive to the pixels to maintain constant root-mean-square drive and minimize phase fluctuations during the dc balance refresh cycle. The silicon has been fabricated and liquid-crystal-on-silicon cells both with and without the QWP assembled; applications include optically transparent switches for optical networks, beam steering for add-drop multiplexers for wavelength-division-multiplexing telecommunications, television multicast, and holographic projection.     

High-yield synthesis of single-crystalline 3C-SiC nanowires by a facile autoclave route

Single-crystalline 3C-SiC nanowires have been synthesized in large scale through a one-step autoclave route by the reaction of SiCl₄, (C₅H₅)₂Fe and metallic Na at 500 °C. Electron microscopy investigations show that the nanowires have typical diameters of 15-50 nm, lengths up to several tens of micrometers and grow along the [111] direction. The possible growth mechanism of the nanowires is discussed.     

钕电解阳极过电位的测定

用慢扫描示波法测定了钕电解的阳极过电位 .考察了温度、阳极电流密度、Nd2 O3添加量、电解质组成等因素对阳极过电位的影响 ,探讨了降低阳极过电位的可能途径 .结果表明 ,阳极过电位随阳极电流密度的增加而增大 ,随温度的升高而减小 ,一定范围内 ,阳极过电位与阳极电流密度的对数呈线性关系 ,满足塔菲尔方程 ;电解质中LiF和Nd2 O3浓度增加 ,阳极过电位降低 ;适当控制阳极电流密度、升高温度、增加电解质中LiF和Nd2 O3的浓度并尽可能减小极间距 ,均有利于降低阳极过电位