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991.
F.T.K. Au  Y.K. Cheung 《Thin》1996,24(1):53-82
The isoparametric spline finite strip method has been applied to the free vibration and stability analysis of shells. The convergence of the method is reviewed critically. Additional numerical examples on shells of different geometry are also employed to demonstrate the efficiency, accuracy and versatility of the method.  相似文献   
992.
993.
A bucket-type high-density (0.25-1.2-mA/cm2) low-energy (500-2000 V) ion source was utilized for high-speed phosphorus doping directly into a thin polysilicon layer without cap SiO2. Doping gas with He dilution was selected to reduce etching of polysilicon film. Excimer laser (XeCl, 8 mm×8 mm) pulse annealing was introduced to activate effectively the doped impurity. The combination of these techniques provided a practically low sheet resistance for the TFT source, drain, and gate with a short time doping. The low-temperature polysilicon TFT fabricated with a doping time of 10 s had characteristics comparable to those of that fabricated by a longer time doping or conventional ion implantation, showing the practicality of this technology and its promise for giant microelectronics  相似文献   
994.
We have recently developed an optical contactless method for testing the quality of solder joints during accelerated thermal cycling ageing processes.1 The method was based upon the measurement of the dynamic thermal behaviour of the joint to short bursts of Joule heating. It has proved to be efficient in revealing the formation of cracks at the lead-solder interface. We present a method to evaluate ageing at a much earlier stage in the cycling process. We have observed in earlier work,1 that before cracks appear, structural changes occur in the solder at the lead-solder interface. The thermal response of the solder joint is recorded over time to a Peltier heat perturbation produced by flowing a current pulse through the interface where structural changes occur. The key point in this method is to discriminate the Peltier effect from the Joule thermal response because both effects generate heat. The variation of the early Peltier response in the thermal cycling ageing tests is seen as a quantitative signature of the structural changes in the lead-solder interface.  相似文献   
995.
Relaxation phenomena due to equilibration of point defects in metals are reviewed. The relaxation effect in specific heat observed in tungsten and platinum confirms that in both cases the nonlinear increase in the high-temperature specific heat has to be attributed to point-defect formation. Relaxation phenomena observed by measurements of electrical resistivity and positron annihilation are also considered. The comparison of the data seems to be favorable for the conclusion that all the phenomena are of one origin.  相似文献   
996.
997.
An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated. Results show that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges, the thermal resistance of the laser diodes could be deduced easily. A higher thermal resistance of 640 K/W has been measured on a narrow ridge laser chip without soldering. Other thermal and spectral properties of the lasers have also been measured and discussed.  相似文献   
998.
In order to meet the quality-of-service (QOS) requirements of the VOD (video-on-demand) service, and, on the other hand, to maximize the system throughput (revenue), it is essential that the admission control algorithm be carefully designed. Two new types of admission control schemes for the VOD service are proposed. They are the enhanced strict admission control (ESAC) and the probabilistic admission control (PAC). In the ESAC schemes, we propose to use more statistics (of small amount and easily pre-calculated) than the peak frame size of the stored video information to strictly guarantee the QOS requirement and to achieve potentially much higher throughput. In the PAC schemes, we propose to use similar statistics as used in the ESAC schemes to achieve even higher throughput at the cost of some small and controllable likelihood of lost/overdue data. The admission control problems are formulated as feasibility problems where different systems of simultaneous equations are considered. For each admission control scheme, if the corresponding system of simultaneous equations has a feasible solution, then admit the call request; otherwise, reject the call. Special structures of the systems are identified so as to facilitate the development of optimal real-time admission control algorithms. Efficient optimal algorithms are also proposed to calculate the minimal buffer requirement for a given performance objective  相似文献   
999.
This paper presents a new concept for a travel aid for the blind. A prototype device, called the NavBelt, was developed to test this concept. The device can be used as a primary or secondary aid, and consists of a portable computer, ultrasonic sensors, and stereophonic headphone. The computer applies navigation and obstacle avoidance technologies that were developed originally for mobile robots. The computer then uses a stereophonic imaging technique to process the signals from the ultrasonic sensors and relays their information to the user via stereophonic headphones. The user can interpret the information as an acoustic “picture” of the surroundings, or, depending on the operational mode, as the recommended travel direction. The acoustic signals are transmitted as discrete beeps or continuous sounds. Experimental results with the NavBelt simulator and a portable prototype show that users can travel safely in an unfamiliar and cluttered environment at speeds of up to 0.8 m/s  相似文献   
1000.
We studied morphology of GaAs surfaces and the transport properties of two-dimensional electron gas (2DEG) on vicinal (111)B planes. Multi-atomic steps (MASs) are found on the vicinal (111)B facet grown by molecular beam epitaxy, which will affect electron transport on the facet. We also studied how the morphology of GaAs epilayers on vicinal (111)B substrates depends on growth conditions, especially on the As4 flux. The uniformity of MASs on the substrates have been improved and smooth surfaces were obtained when the GaAs was grown with high As4 flux, providing step periodicity of 20 nm. The channel resistance of the 2DEG perpendicular to the MASs is reduced drastically with this smooth morphology. These findings are valuable not only for fabricating quantum devices on the (111)B facets but also those on the vicinal (111)B substrates.  相似文献   
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