Mode-hopping noise in index-guided semiconductor lasers and its reduction by saturable absorbers

Mode-hopping noise in index-guided semiconductor lasers is investigated. It is found that random switching between lasing modes and output power differences in those modes cause mode-hopping noise. An effective method to suppress such mode-hopping noise is proposed. High Te doping to an n-type GaAlAs cladding layer completely suppresses the noise. Te in GaAlAs forms a DX center that acts as a saturable absorber. This property stabilizes the laser mode and prevents mode competition. The minimum loss difference between lasing and nonlasing modes to suppress mode-hopping noise is also discussed.     

Comparative study on the bio-electrochemical denitrification equipped with a multi-electrode system.

Three biofilm-electrode reactors (BERs) with multiple cathodes were applied to investigate the effect of electrode configuration and flow direction on denitrification under laboratory-scale conditions. The distribution of nitrate, DO and pH varied among applied BERs, as a consequence of a different electrode position in the reactors, bringing about a difference in the performance. Flow-through configuration of electrodes with a downstream anode appears to be the most suitable configuration since nitrite did not accumulate in the effluent only in this experiment and the current-denitrification efficiency at low current densities was high. Thus, it is recommended for a low-loading operation.     

Numerical Modeling of an Earthquake-Induced Landslide Considering the Strain-Softening Characteristics at the Bedding Plane

The damage caused by an earthquake-induced landslide can generally be classified as either a limited deformation or a catastrophic failure. From an engineering point of view, the latter can be much more dangerous because the sliding mass may continue moving until it collides with another object. If a catastrophic failure occurs near a river, the debris may block the river, causing serious damage to the adjacent area. Therefore, examination of the mechanism of such catastrophic slope failures is important with respect to the mitigation of earthquake disasters in mountainous districts, although numerical modeling of such phenomena is rather difficult. In the present study, a new numerical model is developed to simulate an earthquake-induced catastrophic landslide that occured at a typical dip slope, namely, the Yokowatashi Landslide in Japan. In this case, the upper part of the bedrock on the planer tectonic dip surface slid more than 70 m. Only shear-strength degradation at the bedding plane could cause such a long-distance traveling failure. To investigate the strain-softening characteristics of the materials that filled the bedding plane, a series of laboratory tests involving undisturbed block samples was performed. The measured stress-displacement relationships under cyclic loading were numerically modeled as a newly proposed elasto-plastic constitutive model to be used in numerical simulations of landslide, based on the dynamic finite element method. The observed phenomena were appropriately simulated by the proposed method. The mechanism of catastrophic failure is discussed in detail in this paper in order to clarify the relationships between the strain-softening characteristics and the global slope stability. Our newly proposed method to evaluate the possibility of a catastrophic failure was applied to the landslide, and the moment when the slope becomes unstable was able to be predicted. The results confirm that the proposed method can predict the catastrophic failure of a slope.     

Nonpolar AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistors With a Normally Off Operation

Nonpolar AlGaN/GaN metal–insulator–semiconductor-heterojunction field-effect transistors (MIS-HFETs) with a complete normally off operation have been demonstrated for the first time. To realize the normally off operation of the MIS-HFETs, a 2-nm-thick SiN (as an insulator) and GaN-based nonpolar epitaxial layers that are free from polarization charges are employed. We have found that a thicker nonpolar AlN buffer layer achieves a GaN layer with a narrower full width at half maximum of the X-ray rocking curve and higher electron mobility. The fabricated MIS gate structure on the AlN buffer layer successfully decreases the gate leakage current and enables a more positive gate bias of up to $+$4 V, which is advantageous to achieve a higher drain current. Moreover, the n-GaN capping layer between gate and ohmic electrodes helps to reduce parasitic resistance and suppress current collapse. The fabricated $a$-plane MIS-HFET exhibits a threshold voltage of $+$ 1.3 V with a high drain current of 112 mA/mm. The presented MIS-HFETs will be desirable in next-generation radio-frequency and power switching application fields.      

Effects of hydroperoxide in breads on IgE antibody responses

The effect of hydroperoxide in breads on antigen-antibody reaction against IgE was examined. We compared the antigen-antibody reaction against IgE between dough including hydroperoxide and that not including hydroperoxide. Crude proteins extracted from the dough including hydroperoxide showed weak antigen-antibody reaction on allergic tests such as ring precipitin test with human-specific IgE, and the IgE binding activity on ELISA. In contrast, the dough without hydroperoxide showed antigen-antibody reaction. The crude proteins extracted from the dough with hydroperoxide or without hydroperoxide were applied by affinity chromatography of trypsin-immobilized chitin. Then proteins having affinity were recovered. The recovered proteins were separated by SDS-PAGE. Each protein was examined for the IgE binding activity on ELISA. The IgE binding activity of baked bread was studied as well. Crude proteins of baked bread made from dough including hydroperoxide showed weaker IgE binding activity on ELISA than proteins of baked bread made from dough without hydroperoxide. Those results suggested that addition of hydroperoxide into dough affects on antigen activation.     

Evaluation of phosphate removal from water by immobilized phosphate-binding protein PstS

The phosphate (P(i))-binding protein PstS is a member of a family of periplasmic proteins that act as high-affinity receptors for active transport systems in bacteria. PstS protein purified from Pseudomonas aeruginosa was immobilized to N-hydroxysuccinimide-activated Sepharose, packed into a plastic column (5 x 70 mm), and examined for its potential ability to remove P(i) from water. The PstS-Sepharose column completely removed P(i) from 32P-labeled pond water containing about 0.5 microM P(i) (0.015 mg P per liter). More than 90% of 32P-P(i) that was retained in the column could be eluted by washing with low-pH water.