Constructing Internet coordinate system based on delay measurement

In this paper, we consider the problem of how to represent the locations of Internet hosts in a Cartesian coordinate system to facilitate estimation of network distances among arbitrary Internet hosts. We envision an infrastructure that consists of beacon nodes and provides the service of estimating network distance between pairs of hosts without direct delay measurement. We show that the principal component analysis (PCA) technique can effectively extract topological information from delay measurements between beacon hosts. Based on PCA, we devise a transformation method that projects the raw distance space into a new coordinate system of (much) smaller dimensions. The transformation retains as much topological information as possible and yet enables end hosts to determine their coordinates in the coordinate system. The resulting new coordinate system is termed as the Internet Coordinate System (ICS). As compared to existing work (e.g., IDMaps and GNP), ICS incurs smaller computation overhead in calculating the coordinates of hosts and smaller measurement overhead (required for end hosts to measure their distances to beacon hosts). Finally, we show via experiments with both real-life and synthetic data sets that ICS makes robust and accurate estimates of network distances, incurs little computational overhead, and its performance is not susceptible to the number of beacon nodes (as long as it exceeds a certain threshold) and the network topology.     

Optimal CSMA scheduling with dual access probability for wireless networks

Wireless Networks - Recently optimal Carrier Sense Multiple Access (CSMA) scheduling schemes have attracted much attention in wireless networks due to their low complexity and provably optimal...     

An Efficient Paging Strategy Based on Paging Agents of Base Stations in Cellular Mobile Networks

We propose a new paging strategy to reduce paging cost by adding paging agents at base stations. When a mobile‐terminated call occurs, the base stations look up the paging agents to determine if terminal paging is actually to be made. An analytical model based on a Markov chain is used to evaluate the performance of the proposed strategy. The numerical results show that the proposed strategy significantly reduces the paging cost compared with the simultaneous paging strategy.     

CMOS Outphasing Class-D Amplifier With Chireix Combiner

This letter presents a CMOS outphasing class-D power amplifier (PA) with a Chireix combiner. Two voltage-mode class-D amplifiers used in the outphasing system were designed and implemented with a 0.18-mum CMOS process. By applying the Chireix combiner technique, drain efficiency of the outphasing PA for CDMA signals was improved from 38.6% to 48% while output power was increased from 14.5 to 15.4 dBm with an adjacent channel power ratio of -45 dBc.     

Opportunistic Space-Division Multiple Access With Beam Selection

In this paper, a novel transmission technique for the multiple-input multiple-output (MIMO) broadcast channel is proposed that allows simultaneous transmission to multiple users with limited feedback from each user. During a training phase, the base station modulates a training sequence on multiple sets of randomly chosen orthogonal beamforming vectors. Each user sends the index of the best beamforming vector and the corresponding signal-to-interference-plus-noise ratio for that set of orthogonal vectors back to the base station. The base station opportunistically determines the users and corresponding orthogonal vectors that maximize the sum capacity. Based on the capacity expressions, the optimal amount of training to maximize the sum capacity is derived as a function of the system parameters. The main advantage of the proposed system is that it provides throughput gains for the MIMO broadcast channel with a small feedback overhead, and provides these gains even with a small number of active users. Numerical simulations show that a 20% gain in sum capacity is achieved (for a small number of users) over conventional opportunistic space division multiple access, and a 100% gain (for a large number of users) over conventional opportunistic beamforming when the number of transmit antennas is four.     

Achieving time-of-flight mobilities for amorphous organic semiconductors in a thin film transistor configuration

We observe bulk-like hole transport in amorphous organic semiconductors in a thin film transistor (TFT) configuration. Five different organic hole transporters (HTs) commonly used in organic light-emitting diodes are investigated. When these HTs are deposited on SiO₂ gate dielectric layer, the TFT mobilities are 1–2 orders of magnitude smaller than those obtained from bulk films (3–8 μm) using time-of-flight (TOF) technique. The reduction of hole mobilities can be attributed to the interactions between the organic HTs and the polar SiO bonds on the gate dielectric layer. Detailed temperature dependence studies, employing the Gaussian disorder model, indicate that the SiO₂ gate dielectric contributes between 60 and 90 meV of energetic disorder in the charge hopping manifold. Besides SiO₂ gate dielectric, similar effects can also be observed for other polar insulators including polymeric PMMA and BCB, or HMDS-modified SiO₂. However, when a common non-polar polymer, polystyrene (PS), is employed as the dielectric layer, the dipolar energetic disorder becomes negligible. Holes effectively experience bulk-like transport on the PS gate dielectric surface. TFT mobilities extracted from all five organic HTs are in excellent agreements with TOF mobilities. The present study should have broad applications in the transport characterization of amorphous organic semiconductors.     

Coil‐Capacitor Circuit Design of a Transcutaneous Energy Transmission System to Deliver Stable Electric Power

A new transcutaneous energy transmission (TET) system was developed for transmitting electrical power to an implanted device, such as an artificial heart in a patient's body. This new design can maintain a stable output voltage independent of the load resistance. The system includes a compensation capacitor to reduce energy loss and increase power transfer efficiency. Experimental results show that the output voltage of the receiving coil changes very little as the load resistance varies from 14.8 Ω to 15 kΩ, which corresponds to a change in output power from 0.1 to 97 W.     

Design and Implementation of a Multimodal Input Device Using a Web Camera

We propose a novel input pointing device called the multimodal mouse (MM) which uses two modalities: face recognition and speech recognition. From an analysis of Microsoft Office workloads, we find that 80% of Microsoft Office Specialist test tasks are compound tasks using both the keyboard and the mouse together. When we use the optical mouse (OM), operation is quick, but it requires a hand exchange delay between the keyboard and the mouse. This takes up a significant amount of the total execution time. The MM operates more slowly than the OM, but it does not consume any hand exchange time. As a result, the MM shows better performance than the OM in many cases.     

A novel approach to characterization of progressive breakdown in high-k/metal gate stacks

Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO₂/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for extraction of the PBD time and its dependence on gate voltage are reported.     

Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates

We investigated the low temperature reactions between the Ti films created by the ionized sputtering process and the (001) single crystal silicon wafers using high resolution transmission electron microscopy and x-ray diffractometry. We observed that the amorphous Ti-Si intermixed layer is formed at the Ti-Si interface whose thickness increased with the thickness of the deposited Ti films. The amorphous interlayer grew upon annealing treatments at the temperatures below 450°C. We also observed that the crystallization of the amorphous interlayer occurred upon annealing at 500°C. The first formed phase is Ti₅Si₃ in contact with Ti films, which is epitaxial with Ti films. Upon further annealing at 500°C, the Ti₅Si₄ phase and C49 TiSi₂ phase formed in the regions close to Ti films and Si substrates, respectively.