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This paper proposes an economic model for the synthetic chart. The synthetic chart is an integration of the chart and the CRL chart. A simplified algorithm to obtain the optimal parameters of the synthetic chart which minimizes the expected cost function is introduced. Numerical examples based on different values of input parameters are given, and sensitivity analyses of the parameters are performed. The input parameters which have a significant impact on the cost and choice of optimal parameters of the synthetic chart are identified. The effect of incorrect estimation of the input parameters is also investigated, and it is found that the optimal design parameters are quite robust to changes in the input parameters, except the shift parameter. It is also shown that if the chart cannot be operated at the economically optimal level, there is still a large choice of parameters to choose from which does not result in a large increase in cost. All the above analyses and results are based on numerical examples and verified through simulation over a wide range of parameter values. Comparisons are also performed among the synthetic Shewhart and EWMA charts. Based on the numerical examples and simulation over a wide range of parameter values, it is shown that the synthetic chart has better economic performance than the other two control charts under most conditions. Copyright © 2011 John Wiley & Sons, Ltd.  相似文献   
104.
Yoon KJ  Lee MH  Kim GH  Song SJ  Seok JY  Han S  Yoon JH  Kim KM  Hwang CS 《Nanotechnology》2012,23(18):185202
A tri-stable memristive switching was demonstrated on a Pt/TiO?/Pt device and its underlying mechanism was suggested through a series of electrical measurements. Tri-stable switching could be initiated from a device in unipolar reset status. The unipolar reset status was obtained by performing an electroforming step on a pristine cell which was then followed by unipolar reset switching. It was postulated that tri-stable switching occurred at the location where the conductive filament (initially formed by the electroforming step) was ruptured by a subsequent unipolar reset process. The mechanism of the tri-stable memristive switching presented in this article was attributed to the migration of oxygen ions through the ruptured filament region and the resulting modulation of the Schottky-like interfaces. The assertion was further supported by a comparison study performed on a Pt/TiO?/TiO(2-x)/Pt cell.  相似文献   
105.
An approach to the surface modification of TiO2 nanoparticles was described based on the thiol functionalization of TiO2 followed by thiol-lactam initiated radical polymerization (TLIRP) of methyl methacrylate (MMA). FT-IR, XRD and XPS analyses confirmed the grafting of the polymer on the TiO2 surface. TGA analysis revealed superior thermal stability of PMMA-g-TiO2 compared with PMMA. TEM measurements and time-dependent phase monitoring suggested much higher colloidal stability of PMMA-g-TiO2 than TiO2 in toluene. The controlled nature of the TLIRP of MMA from the surface of TiO2 was determined by GPC analysis.  相似文献   
106.
Energy transfer in self‐assembled ionic liquids (ILs) and iron oxyhydroxide nanocrystals and the controlled surface chemistry of functionalized nanomaterials for photocatalytic applications are reported. Self‐assembled ILs play the role of multifunctional materials in terms of constructing a well‐designed nanostructure, controlling the surface chemistry, and triggering the energy transfer of functionalized materials. IL‐functionalized β‐FeOOH nanorods show ≈10‐fold higher performances than those of commercial materials due to the synergistic effect of well‐defined nanomaterials in diffusion‐controlled reactions, specific interactions with target pollutants, and energy transfers in hybrid materials. In particular, the energy transfer in C4MimCl‐functionalized β‐FeOOH nanorods enhances photocatalytic activity due to the generation of Fe2+. The strategy described herein provides new insight into the rational design of functionalized inorganic nanomaterials for applications in emerging technologies.  相似文献   
107.
In this paper, an integrated solid oxide fuel cell (SOFC) and biomass gasification system is modeled to study the effect of gasification agent (air, enriched oxygen and steam) on its performance. In the present modeling, a heat transfer model for SOFC and thermodynamic models for the rest of the components are used. In addition, exergy balances are written for the system components. The results show that using steam as the gasification agent yields the highest electrical efficiency (41.8%), power-to-heat ratio (4.649), and exergetic efficiency (39.1%), but the lowest fuel utilization efficiency (50.8%). In addition, the exergy destruction is found to be the highest at the gasifier for the air and enriched oxygen gasification cases and the heat exchanger that supplies heat to the air entering the SOFC for the steam gasification case.  相似文献   
108.
Friction stir welding (FSW) of dissimilar stainless steels, low nickel austenitic stainless steel and 409M ferritic stainless steel, is experimentally investigated. Process responses during FSW and the microstructures of the resultant dissimilar joints are evaluated. Material flow in the stir zone is investigated in detail by elemental mapping. Elemental mapping of the dissimilar joints clearly indicates that the material flow pattern during FSW depends on the process parameter combination. Dynamic recrystallization and recovery are also observed in the dissimilar joints. Among the two different stainless steels selected in the present study, the ferritic stainless steels shows more severe dynamic recrystallization, resulting in a very fine microstructure, probably due to the higher stacking fault energy.  相似文献   
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A highly flexible and transparent transistor is developed based on an exfoliated MoS2 channel and CVD‐grown graphene source/drain electrodes. Introducing the 2D nanomaterials provides a high mechanical flexibility, optical transmittance (~74%), and current on/off ratio (>104) with an average field effect mobility of ~4.7 cm2 V?1 s?1, all of which cannot be achieved by other transistors consisting of a MoS2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, a low Schottky barrier (~22 meV) forms at the MoS2/graphene interface, which is comparable to the MoS2/metal interface. The high stability in electronic performance of the devices upon bending up to ±2.2 mm in compressive and tensile modes, and the ability to recover electrical properties after degradation upon annealing, reveal the efficacy of using 2D materials for creating highly flexible and transparent devices.  相似文献   
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