壳聚糖负载稀土化合物催化环氧乙烷与环氧丙烷共聚合反应研究

研究以壳聚糖(Cs)作为高分子金属催化剂载体,制得负载稀土金属化合物的高分子金属催化剂,应用于环氧乙烷(BO)和环氧丙烷(PO)的共聚合反应.研究发现以三异丁基铝(Al(i-Bu)3)为助催化剂,乙酰丙酮(Acac)为第三组分时,该体系的催化活性高达192 kg*copolymer/mol*Y,比非负载型稀土催化体系活性提高1个数量级以上.环氧乙烷和环氧丙烷的竞聚率r 1(EO)、r 2(PO)分别为2.75±0.02和0.55±0.01;并用13C-NMR谱和DSC谱对共聚物结构进行了表征.     

添加物对Fe_2O_3超微粒的稳定作用

粒子的尺寸直接关系着气敏元件性能的好坏．为了防止Ｆｅ２Ｏ３超微粒在气敏元件烧结过程中长大，我们在纯Ｆｅ２Ｏ３中掺入５ｍｏｌ％碱土金属离子，利用ＸＲＤ和ＴＥＭ系统研究了掺杂物对Ｆｅ２Ｏ３超微粒子的稳定作用，并对由掺杂引起的Ｆｅ２Ｏ３电学性质的变化作了初步探讨．     

Analysis of the drude model in metallic films

A method, believed to be new, to simulate Drude parameters for collective oscillation of the free carriers in metallic films is proposed. Plasma resonance frequency and relaxation were simulated simultaneously from both the real and the imaginary parts of the dielectric function of a metallic film after consideration of their correlation in the Drude model. As examples, the contributions of the electrons in Ag films and of the free carriers in metallic silicide, NbSi(2) and TaSi(2), films have been studied.     

Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures

A pseudomorphic Al0.5Ga0.5As/In0.25Ga0.75As/GaAs asymmetric quantum wire (QWR) structure was grown on GaAs V-grooved substrate by low pressure metal organic vapor phase epitaxy. The formation of crescent shaped QWRs at the bottom of the V-grooves was confirmed by both transmission electron microscopy and photoluminescence (PL) spectra. The temperature dependence of PL spectra demonstrated a fast decrease of the sidewall quantum well PL intensity with increasing temperature, which originates from relaxation of carriers from well to wire region. The self-aligned dual implantation technique was successfully used to selectively disable the adjacent quantum structures. Decrease of the PL intensity of QWR at 8 K was observed after selective implantation, which resulted from a decreased number of carriers relaxed from adjacent quantum structures.     

Effect of carrier screening on ZnO-based resistive switching memory devices

The carrier screening effect occurs commonly in dielectric materials. It reduces the electric potential gradient, thus negatively affecting the functionality of resistive random access memory (RRAM) devices. An Au/ZnO film/Al-doped ZnO device fabricated in this work exhibited no resistive switching (RS), which was attributed to the carrier screening effect. Therefore, annealing was used for alleviating the screening effect, significantly enhancing the RS property. In addition, different on/off ratios were obtained for various bias values, and the screening effect was accounted for by investigating electron transport mechanisms. Furthermore, different annealing temperatures were employed to modulate the free carrier concentration in ZnO films to alleviate the screening effect. The maximal on/off ratio reached 10⁵ at an annealing temperature of 600 °C, yielding the lowest number of free carriers and the weakest screening effect in ZnO films. This work investigates the screening effect in RS devices. The screening effect not only modulates the characteristics of memory devices but also provides insight into the mechanism of RS in these devices.

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介质薄膜的透射光谱测量及其光学参数的分析

介绍介质薄膜透射光谱的测量以及基于分析薄膜透射光谱的计算薄膜光学参数的方法。对制备在玻璃基板上的二氧化钛、二氧化硅和氧化锌薄膜进行了可见光谱区的透射比测量，并用包络线方法和最优化方法对这些透明薄膜的光学参数进行了计算和分析。着重讨论了最优化方法在分析薄膜光学参数中的应用及其误差分析。此外，还对包络线方法和最优化方法进行了比较。     

4D动感数字电影控制系统的研究与实现

4D动感数字电影是信息时代数字化技术高速发展的产物,针对目前市场4D动感数字电影技术的现状,采用服务器/客户端的控制模式,提出了基于计算机网络的4D动感数字电影控制方案。将编辑数字电影的特效参数进行数据库存储,播放时利用局域网实现多端同步播放控制,根据播放数字电影的信息准确读取相应的编辑好的特效动作,实现4D动感影院环境的仿真控制,真正达到动感功能和影片播放的同步,提高数字电影特效效果从而营造4D效果。     

工作流管理系统设计与实现

近年来,分布式工作流系统已经成为计算机方面的研究热点。工作流管理系统能够在生产设计过程中提高效率、降低成本、提高竞争力。随着网络技术和软件技术的发展,工作流系统已经得到了广泛的应用。通过介绍工作流管理系统的基本概念和结构,提出了一种基于J2EE的工作流管理系统的设计方案,使用shark开源工作流引擎,采用分布式策略将工作流系统功能模块化。通过对总体过程进行描述,各个模块间的相互配合工作,实现了B/S结构的工作流管理系统并应用于飞行器设计系统中。