含氮金刚石结构中Jahn-Teller畸变效应的计算

研究了由J.Bourgoin和M.Lannoo提出的半导体内Jahn-Teller畸变效应的计算理论。应用Bourgoin和Lannoo的方法研究了含中心氮杂质金刚石结构的Jahn-Teller畸变问题,计算了34C+N簇团的T2模耦合沿%111&晶向的Jahn-Teller畸变效应,结果与实验相符。     

动感像素全息母版图案的设计制作研究

本文介绍了一种新颖的数码像素全息高速拍摄装置来实现全息母版的制作。提出和介绍了运用Photoshop软件一些特殊的图像处理功能设计制作动感像素全息图的方法,并结合多种防伪技术,使产生的图案具有不可仿制的图形畸变特点,并列举了设计实例。     

On the Feasibility of Growing Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 Single Crystals

Pb[(Zn_1/3Nb_2/3)_0.91Ti_0.09]O₃ (PZNT91/9) single crystals were grown by two methods: from solution using PbO as a self‐fluxing agent (SC method) and directly from the melt without fluxing (MC method). In both growth methods, an allomeric Pb[(Mg_1/3‐Nb_2/3)_0.69Ti_0.31]O₃ (PMNT69/31) single crystal was used as a seed. X‐ray diffraction patterns of ground crystals showed that phase‐pure perovskite PZNT91/9 single crystals were successfully fabricated by the above two methods. The composition of the crystals obtained by both the SC and MC methods was analyzed using X‐ray fluorescence, which confirmed that the crystal composition is close to the nominal value, although volatilization of PbO and segregation during crystal growth are inevitable. The MC PZNT91/9 crystals exhibit excellent piezoelectric properties, with the piezoelectric constant, d₃₃, in the range of 1800–2200 pC N^–1. This value is comparable to that of the SC crystals. However, the MC crystals show an abnormal dielectric behavior. In contrast with the SC crystals, in the MC crystals a much broader dielectric peak appears in the dielectric response curves, accompanied by a much lower peak temperature of around 105 °C. Furthermore, frequency dispersion is apparent over a much wider temperature range (even more apparent than in pure relaxors), where a large, i.e., about 70 °C, full width at half maximum (FWHM) for the dielectric peaks is observed in the dielectric response. It is speculated that such an unusual phenomenon correlates with defects, microinhomogeneities, and polar regions in the as‐grown MC crystals. The origins of this abnormality have not been interpreted in detail until now. However, optical observation of the domain structure confirms that both the SC and MC crystals possess complex structural states.     

Thermo-Sensitive Ba0.64Sr0.36TiO3 Thin Film Capacitors for Dielectric Type Uncooled Infrared Sensors

Ba_0.64Sr_0.36TiO₃ (BST) thin films are prepared on Pt/Ti/SiO₂/Si₃N₄/SiO₂/Si substrates by a sol-gel method. Thermo-sensitive BST thin film capacitors with a Metal-Ferroelectrics-Metal (M-F(BST)-M) structure are fabricated as the active elements of dielectric type uncooled infrared sensors. XRD are employed to analyze the crystallographic structures of the films. AFM observations reveal a smooth and dense surface of the films with an average grain size of about 35 nm. Rapid temperature annealing (RTA) process is a very efficient way to improve crystallization quality. The preferable annealing temperature is 800°C for 1 min. The butterfly shaped C-V curves of the capacitors indicate the films have a ferroelectric nature. The dielectric constant and dielectric loss of the films at 100 kHz are 450 and 0.038, respectively. At 25°C, where the thermo-sensitive capacitors work, the temperature coefficient of dielectric constant (TCD) is about 5.9 %/°C. These results indicate that the capacitors with sol-gel derived BST thin films are promising to develop dielectric type uncooled infrared sensors.     

Formation and inhibition of free radicals in electrically stressed and aged insulating polymers

Previous work has shown that prebreakdown, electrical aging, and breakdown phenomena are directly associated with charge carriers injected from electrical contacts and their subsequent dissociative trapping and recombination. In addition, the energy released from each trapping or recombination event is dissipated in the breaking of the bonds of macromolecules, thus forming free radicals and new traps in the electrically stressed insulating polymers, as predicted by Kao's model. It is this gradual degradation process that leads to electrical aging and destructive breakdown. New experimental results are presented to confirm previous findings and a new approach to inhibit the degradation process by the incorporation of suitable dopants into the polymer. The concentration of free radicals in the polymer increases with an increasing electric field at a fixed stress time of 250 h and with increasing stress time at a fixed electric field of 833 kV cm^?1. The concentration of free radicals is directly related to the concentration of new traps created by stress. However, when suitable dopants are incorporated, the initiation voltage for the occurrence of electrical treeing and the breakdown strength are both increased. The dopants tend to create shallow traps and have little effect on the deep trap concentration. This implies that the dopants act as free‐radical scavengers that tend to satisfy the unpaired electrons of the broken bonds, which create new acceptor‐like electron traps and new shallow traps. By doing so, the shallow traps screen the deep traps, thereby reducing the energy released during trapping and recombination and the probability of breaking the macromolecular bonds and causing structural degradation. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 89: 3416–3425, 2003     

面积坐标法构造含转角自由度的四结点膜元

以四边形面积坐标作为工具,构造了两个含转角自由度的广义协调四边形单元AQ4和lAQ4。它们通过强式分片检验,与同类单元相比,具有很高的计算精度,能消除梯形闭锁现象,有很强的抗网格畸变的能力。     

Nd3+:Y0.5Gd0.5VO4晶体生长和基本特性

Nd^3 :Y0.5Gd0.5VO4晶体作为一种新的激光材料，可以用中频感应加热提拉法生长。X射线粉末衍射分析表明它的结构与Nd^3 :YVO4晶体结构相同，它的晶格常数介于YVO4和NdVO4晶格常数之间。用ICP光谱法测定晶体中Nd^3 含量为0．8at％，分凝系数为0．8，与Nd^3 :GdVO4晶体中Nd^3 的分凝系数0．78相当；用称重法测定其密度为5．00g／cm^3；用稳态纵向热流法测出其室温热导率为12．5W／mK。实验表明Nd^3 :Y0.5Gd0.5VO4晶体有希望作为高功率ID泵浦激光晶体材料。     

电信运营企业项目融资初探

通过对电信运营企业多渠道融资的必要性的阐述，论证了项目融资是电信运营企业可选的一种融资方式，并有针对性地提出了电信运营企业实施项目融资的模式及应注意的问题。     

Lead-free piezoelectric ceramics with composition of (0.97−x)Na1/2Bi1/2TiO3-0.03NaNbO3-xBaTiO3

Compositions in (Na_1/2Bi_1/2)TiO₃ based ternary system, (0.97 – x) (Na_1/2Bi_1/2)TiO₃-0.03NaNbO₃-xBaTiO₃ (x = 0, 0.01, 0.02, 0.04, 0.05, 0.06, 0.08) are synthesized using conventional solid state reaction method. Influence of BaTiO₃ on crystal structure, dielectric and piezoelectric properties are investigated. All compositions can form single perovskite phase. Powder x-ray diffraction patterns can be indexed assuming a pseudo-cubic structure. Lattice constant increases with the increase of BaTiO₃ concentration. Rhombohedral distortion is observed in poled samples with BaTiO₃ concentration up to 6 mol%. Temperature dependence of dielectric constant and dissipation factor measurement reveals that all compositions experience two phase transitions: from ferroelectric to antiferroelectric and from antiferroelectric to paraelectric. Both transition temperatures, T _c and T _f, are lowered due to introduction of BaTiO₃. Ferroelectric to antiferroelectric phase transition has relaxor characteristics. Piezoelectric properties have relatively higher value around 1 mol% to 4 mol% BaTiO₃. In ceramics with x = 0.02, thickness electromechanical coupling factor (k _t) of 0.51 and piezoelectric charge constant (d ₃₃) of 110 × 10^–12 C/N are obtained. Addition of small amount of BaTiO₃ (x = 0.01, 0.02) improves piezoelectric properties compared to NBT-NN binary system, while T _f remains above 140°C, higher than that of NBT-BT binary system composition with similar piezoelectric properties. This is in favor of the possible application of them as lead-free piezoelectric ceramics.     

单向实时数字视频传输中帧同步锁定技术研究

提出一种适用于单向实时数字视频传输系统的帧同步锁定方案。其方法在接收端采用本地参考时钟、状态机、锁相环，并结合CIMT编码方式实现系统自动维持帧同步锁定，而无需周期性加入帧同步码。对该帧同步锁定方案与周期性加入帧同步码强制锁定方案进行性能比较．并将其应用到单向实时数字视频光纤传输系统中。实验证明，系统自动实现帧同步锁定的方案是单向实时数字视频传输系统实现帧同步锁定的最佳方案。