Nonlinear mapping performance analysis of the polynomial perceptron

The nonlinear mapping ability of the polynomial perceptron (PP) is analysed, which shows that any continuous functions can be approximated to any given accuracy by the polynomial perceptron with small degree L(L>or=2) and the nonlinear mapping ability of the PP is approximately the same as that of the multilayer perceptron (MLP). Numerical results are given.<>     

GexSi1—x／Si应变层超晶格的结构特性与器件应用

近年来,Ge_xSi_(1-x)/Si 应变层超晶格的研究日渐活跃与成熟。本文试从半导体物理与器件应用的角度出发,着重介绍了这种超晶格的各种结构特性,并简要评述了以 Ge_xSi_(1-x)/Si 异质结形成的各种新型半导体器件的研究进展。     

GaN材料生长研究

用常压ＭＯＣＶＤ方法我们在蓝宝石（０００１）、Ｓｉ（１１１）衬底上，成功地制备出ＧａＮ单晶薄膜材料，取得了ＧａＮ材料的初步测试结果。纯度ＧａＮ为ｎ型，载流子浓度为１０１７～１０１８ｃｍ－３，迁移率为２００～３５０ｃｍ２／Ｖ·ｓ，双晶衍射半峰宽为７′，室温ＰＬ光谱本征发光波长为３７０ｎｍ，并首次观察到掺ＺｎＧａＮ呈ｐ型电导。     

N-苄基丙烯酰胺的合成

以丙烯腈和苯甲醇为原料，浓硫酸作催化剂，合成了N-苄基丙烯酰胺（N-BAA）。考察了反应温度、反应时间和催化剂用量等因素对产物收率的影响，得出了最佳反应条件：n（丙烯腈）：n（苯甲醇）：n（浓硫酸）=3：1：1．2，反应时间3h，反应温度60℃。在最佳条件下，N-BAA的收率可达92％。每100g粗产物用10％氢氧化钠溶液提纯，精制产物纯度可达99．80％，熔点为64～65℃。通过红外光谱对产物结构进行了表征。     

过钻头测井技术——一种新的测井数据采集方式毕

过钻头测井技术是一种新的测井数据采集方式，被评为2005年国际石油科技十大进展之一。介绍了过钻头测井技术的工作原理和实例，分析了过钻头测井技术的优点。通过电缆测井和随钻测井对比的分析，认为过钻头测井不仅会成为水平井、大斜度井及困难井眼条件首选测量方式，也会逐渐在直井中推广普及。     

齐鲁PE100级燃气管专用料的研制

对齐鲁PE100级燃气管专用料DGDB2480HBK的力学性能、耐慢速裂纹增长性能、熔体强度等进行了研究与分析。结果表明,DGDB2480HBK的耐慢速裂纹增长性能在500h以上;熔体强度在1.0MPa以上;200℃氧化诱导期在65min左右;具有良好的加工性能,专用料的性能完全满足国内生产燃气管的要求。     

900℃空气退火对L-MBE生长的ZnO薄膜发光特性的影响

采用激光分子束外延法在蓝宝石衬底(0001)上生长了高度c轴择优取向的高质量ZnO薄膜,在空气中对生长的薄膜进行900℃退火处理,并对退火前后样品的结晶质量、发光特性采用X射线衍射(XRD)、变温光致发光(PL)研究.退火处理后的ZnO薄膜(0002)面XRDθ-2θ扫描曲线强度明显增强.在光致发光实验中,观测到薄膜分别在3.352,3.309和3.237eV附近有3个明显的近紫外发光峰,分别对应自由激子发射、中性施主或受主束缚激子I9及其声子伴线1Lo.随着温度升高,峰位逐渐向长波方向移动(即所谓"红移"),半高宽(FWHM)逐渐展宽;在发光谱中,来自于晶体缺陷的深能级(DL)区发光强度极小.     

Fluorinated and Alkylthiolated Polymeric Donors Enable both Efficient Fullerene and Nonfullerene Polymer Solar Cells

In this work, four donor (D)–acceptor (A) copolymers based on benzodithiophene (BDT) and benzothiadiazole (BT) with different alkylthiolated and/or fluorinated side chains are developed for efficient fullerene and nonfullerene polymer solar cells (PSCs). The synergistic effect of sulfuration and fluorination on the optical absorption, energy level, crystallinity, carrier mobility, blend morphology, and photovoltaic performance is investigated systematically. By incorporating sulfur atoms onto the side chains, a little blueshifted but significantly increased absorption can be obtained for PBDTS‐FBT compared to PBDT‐FBT . On the other side, a little more blueshifted but much stronger absorption and much lower‐lying highest occupied molecular orbital (HOMO) level can be realized for PBDTF‐FBT when introducing fluorine atoms instead of sulfur atoms. With the combination of both fluorination and sulfuration strategies, PBDTS‐FBT exhibits the best absorption ability, lowest HOMO energy level, and highest crystallinity, which make PBDTSF‐FBT devices show the highest power conversion efficiency (PCE) of 10.69% in fullerene PSCs and 11.66% in nonfullerene PSCs. The PCE of 11.66% is the best value for PSCs based on BT‐containing copolymer donors reported so far. The results indicate that fluorination and sulfuration have a synergistically positive effect on the performance of D–A photovoltaic copolymers and their solar cell devices.     

一种低温漂CMOS带隙基准电压源的设计

阐述了一种采用了一阶温度补偿技术设计的CMOS带隙基准电压源电路。该电路采用Chartered0.25 μm N阱CMOS工艺实现。基于HSPICE的仿真结果表明:当温度在-25℃到85℃之间变化时该电路输出电压的温度系数为12.10~(-6)/℃、。在3.3 V电源电压下的功耗为3.8 mW,属于低温漂、低功耗的基准电压源。