Understanding the Meniscus‐Guided Coating Parameters in Organic Field‐Effect‐Transistor Fabrications

Meniscus‐guided coating (MGC) is mainly applicable on the soluble organic semiconductors with strong π–π overlap for achieving single‐crystalline organic thin films and high‐performance organic field‐effect‐transistors (OFETs). In this work, four elementary factors including shearing speed (v), solute concentration (c), deposition temperature (T), and solvent boiling point (T_b) are unified to analyze crystal growth behavior in the meniscus‐guided coating. By carefully varying and studying these four key factors, it is confirmed that v is the thickness regulation factor, while c is proportional to crystal growth rate. The MGC crystal growth rate is also correlated to latent heat (L) of solvents and deposition temperature in an Arrhenius form. The latent heat of solvents is proportional to T_b. The OFET channels grown by the optimized MGC parameters show uniform crystal morphology (Roughness R_q < 0.25 nm) with decent carrier mobilities (average µ = 5.88 cm² V^?1 s^?1 and highest µ = 7.68 cm² V^?1 s^?1). The studies provide a generalized formula to estimate the effects of these fabrication parameters, which can serve as crystal growth guidelines for the MGC approach. It is also an important cornerstone towards scaling up the OFETs for the sophisticated organic circuits or mass production.     

Kinetic‐Oriented Construction of MoS2 Synergistic Interface to Boost pH‐Universal Hydrogen Evolution

As a prerequisite for a sustainable energy economy in the future, designing earth‐abundant MoS₂ catalysts with a comparable hydrogen evolution catalytic performance in both acidic and alkaline environments is still an urgent challenge. Decreasing the energy barriers could enhance the catalysts' activity but is not often a strategy for doing so. Here, the first kinetic‐oriented design of the MoS₂‐based heterostructure is presented for pH‐universal hydrogen evolution catalysis by optimizing the electronic structure based on the simultaneous modulation of the 3d‐band‐offsets of Ni, Co, and Mo near the interface. Benefiting from this desirable electronic structure, the obtained MoS₂/CoNi₂S₄ catalyst achieves an ultralow overpotential of 78 and 81 mV at 10 mA cm^?2, and turnover frequency as high as 2.7 and 1.7 s^?1 at the overpotential of 200 mV in alkaline and acidic media, respectively. The MoS₂/CoNi₂S₄ catalyst represents one of the best hydrogen evolution reaction performing ones among MoS₂‐based catalysts reported to date in both alkaline and acidic environments, and equally important is the remarkable long‐term stability with negligible activity loss after maintaining at 10 mA cm^?2 for 48 h in both acid and base. This work highlights the potential to deeply understand and rationally design highly efficient pH‐universal electrocatalysts for future energy storage and delivery.     

Iterative design of variable fractional-order IIR differintegrators

In this paper, the variable fractional-order (VFO) differintegrator is designed based on IIR-typed Farrow structure. The stability of the designed VFO IIR differintegrator is achieved by incorporating a constrained function into the objective error function. But the minimization of the original objective error function is a highly nonlinear problem, so an iterative quadratic method is proposed to overcome it. Comparing with the design based on FIR-typed Farrow structure, several designed examples, including a VFO differintegrator, a pure VFO differentiator and a pure VFO integrator, are presented to demonstrate the effectiveness of the proposed method.     

BCB-bridged distributed wideband SPST switch using 0.25-/spl mu/m In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As metamorphic HEMTs

In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As metamorphic high-electron mobility transistor (mHEMT) dc-30 GHz distributed single-pole-single through (SPST) switches were designed and fabricated using the low-/spl kappa/ benzocyclobutene (BCB) bridged technology. The current gain cutoff frequency, and the electron transit time of In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As mHEMTs have been investigated. By analyzing the extrinsic total delay time, the effective velocity of electrons can be estimated, and the average velocity is 2.3/spl times/10/sup 7/cm/s. The dc-30 GHz distributed wideband SPST switch exhibits an insertion loss of less than 5.5 dB, and an isolation larger than 30 dB, which is the first demonstration of the high-isolation of InAlAs-InGaAs mHEMTs monolithic switch. As to the power performance, this switch can handle the power up to 12 dBm at 2.4 GHz. After over 250 h of 85-85 (temperature =85/spl deg/C, humidity =85%) environmental evaluation, this BCB passivated and bridged microwave and monolithic integrated circuit switch demonstrates reliable RF characteristics without any significant performance change, which proves that this process using the low-/spl kappa/ BCB layer is attractive for millimeter-wave circuit applications.     

Design and implementation of n-scroll chaotic attractors from a general jerk circuit

This paper proposes a novel nonlinear modulating function approach for generating n-scroll chaotic attractors based on a general jerk circuit. The systematic nonlinear modulating function methodology developed here can arbitrarily design the swings, widths, slopes, breakpoints, equilibrium points, shapes, and even the general phase portraits of the n-scroll chaotic attractors by using the adjustable sawtooth wave, triangular wave, and transconductor wave functions. The dynamic mechanism and chaos generation condition of the general jerk circuit are further investigated by analyzing the system stability. A simple block circuit diagram, including integrator, sawtooth wave and triangular wave generators, buffer, switch linkages, and voltage-current conversion resistors, is designed for the hardware implementations of various 3-12-scroll chaotic attractors via switchings of the switch linkages. This is the first time to experimentally verify a 12-scroll chaotic attractor generated by an analog circuit. In particular, the recursive formulas of system parameters and real physical circuit parameters are rigorously derived for the hardware implementations of the n-scroll chaotic attractors. Moreover, the adjustability of the nonlinear modulating function and the rigorous recursive formulas together provide a theoretical principle for the hardware implementations of various chaotic attractors with a large number of scrolls.     

Doping Effects on Thermoelectric Properties in the Mg2Sn System

A weak point of Mg₂X thermoelectrics is the absence of a p-type composition, which motivates research into the Mg₂Sn system. Mg₂Sn thermoelectrics were fabricated by a vacuum melting method and a spark plasma sintering process. As a result, Mg₂Sn single phases were acquired in a wide range of Mg-to-Sn atomic ratios (67:33 to 71:29), showing slightly different thermoelectric characteristics. However, the thermoelectric properties of the undoped system were not sufficient for application in commercial production. To maximize the p-type characteristics, many atoms [Ni (VIIIA), Cu (IB), Ag (IB), Zn (IIB), and In (IIIB)] were doped into the Mg₂Sn phase. Among them, the power factor values increased only in the Ag-doped case. Ag-doping resulted in a power factor that was more than 10 times larger than the value in the undoped case. This result could be important for developing p-type polycrystalline thermoelectrics in the Mg₂X (X?=?Si, Sn) system. However, other atoms [Ni (VIIIA), Cu (IB), Zn (IIB), and In (IIIB)] were not determined to act as acceptor atoms. The maximum ZT value for the Ag-doped Mg₂Sn thermoelectric was more than 0.18, which is comparable to the value for the n-type Mg₂Si system.     

应用于暂时粘结、基片保护和MOEMS封装的新型材料

随着微电子制造商持续缩小晶体管基极和其他元件的尺寸,集成电路的密度不断增大,电路连接工艺中开始使用低k介电质和铜导电体。为了进一步提高电路整体性能与射电频率性能、缩小体积、降低电源损耗、提高散热效率,承载电路的基片的厚度正在持续变薄。常规的工艺已经无法加工先进的超薄基片。为了解决这个工艺中的难题,BrewerScience利用自己先进的材料、工艺、机械设备的研究开发水平,正在开发一套崭新的超薄基片的加工操作流程。介绍用于将超薄基片暂时粘结到另一载体的系列材料和流程,完成加工以后,基片和载体可以很容易地分离。另外,对用于保护基片的新型涂料也进行了介绍。在对基片进行薄化和切割的时候,这种涂料可以对基片提供有效的保护。最后,介绍了高透明高折射材料,这些材料用在高亮度发光二极管(HB-LED)和微光电机械系统(MOEMS)中,可以降低由封装引起的光损耗。     

Uniform Concentric Circular Arrays With Frequency-Invariant Characteristics—Theory, Design, Adaptive Beamforming and DOA Estimation

This paper proposes a new digital beamformer for uniform concentric circular arrays (UCCAs) having nearly frequency-invariant (FI) characteristics. The basic principle is to transform the received signals to the phase mode and remove the frequency dependency of the individual phase mode through the use of a digital beamforming or compensation network. As a result, the far-field pattern of the array, which is governed by a set of variable beamformer weights, is electronically steerable, and it is approximately invariant over a wider range of frequencies than conventional uniform circular arrays (UCAs). This also makes it possible to design the compensation network and the beamformer weights separately. The design of the compensation network is formulated as a second order cone programming (SOCP) problem and is solved optimally for minimax criterion. By employing the beamspace approach using the outputs of a set of fixed UCCA frequency-invariant beamformers (FIBs), a new beamspace MUSIC algorithm is proposed for estimating the direction-of-arrivals (DOAs) of broadband sources. Since the beampatterns of the UCCA-FIB is approximately invariant with frequency and is governed by a small set of weights, a very efficient adaptive beamformer using the minimum variance beamforming (MVB) approach can be developed. Simulation results using broadband Gaussian and multisinusoidal inputs show that the proposed adaptive UCCA-FIB is numerically better conditioned than the conventional broadband tapped-delay-line-based adaptive beamformers, due to the FI property and significantly fewer numbers of adaptive parameters. Consequently, a higher output signal-to-inference-plus-noise ratio over the conventional tapped-delay-line approach is observed. The usefulness of the proposed UCCA-FIB in broadband DOA estimation is also verified by computer simulation     

Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II–VI Tunnel Insulators Showing Three-State Behavior

This paper presents an indium gallium arsenide (InGaAs) quantum dot gate field-effect transistor (QDG-FET) that exhibits an intermediate “i” state in addition to the conventional ON and OFF states. The QDG-FET utilized a II–VI gate insulator stack consisting of lattice-matched ZnSe/ZnS/ZnMgS/ZnS/ZnSe for its high-κ and wide-bandgap properties. Germanium oxide (GeO _x )-cladded germanium quantum dots were self-assembled over the gate insulator stack, and they allow for the three-state behavior of the device. Electrical characteristics of the fabricated device are also presented.     

The Design and Construction of a Movable Image-Based Rendering System and Its Application to Multiview Conferencing

Image-based rendering (IBR) is an promising technology for rendering photo-realistic views of scenes from a collection of densely sampled images or videos. It provides a framework for developing revolutionary virtual reality and immersive viewing systems. While there has been considerable progress recently in the capturing, storage and transmission of image-based representations, most multiple camera systems are designed to be stationary and hence their ability to cope with moving objects and dynamic environment is somewhat limited. This paper studies the design and construction of a movable image-based rendering system based on a class of dynamic representations called plenoptic videos, its associated video processing algorithms and an application to multiview audio-visual conferencing. It is constructed by mounting a linear array of 8 video cameras on an electrically controllable wheel chair and its motion is controllable manually or remotely through wireless LAN by means of additional hardware circuitry. We also developed a real-time object tracking algorithm and utilize the motion information computed to adjust continuously the azimuth or rotation angle of the movable IBR system in order to cope with a given moving object in a large environment. Due to imperfection in tracking and mechanical vibration encountered in movable systems, the videos may appear very shaky and a new video stabilization technique is proposed to overcome this problem. The usefulness of the system is illustrated by means of a multiview conferencing application using a multiview TV display. Through this pilot study, we hope to disseminate useful experience for the design and construction of movable IBR systems with improved viewing freedom and ability to cope with moving object in a large environment.