Feasibility study on cellular network analysis with patterned cell culture microdevice

In order to realize cellular network analysis on a chip-based system, our group has been developing a patterned cell culture microdevice with pillars in an array for tapping cells into space surrounded by the pillars. The pillar structures has advantages to trap both adhesive and non-adhesive cells and to precisely control positions of cells and distances between cells for understanding effects of various cell patterns on functions of a cellular network such as cell proliferation, differentiation, and network formation. In this paper, HeLa cell cultivation with the patterned cell culture microdevice having a pillar array fabricated by dry film of thick negative photoresist SU-8 on a glass substrate was executed as a feasibility study on a cellular network analysis. The results revealed that the device performance was found to be enough to culture HeLa cells for more than 48 h. In addition, relative extensibility of blocks of multiple cells compared with single cells tapped on the device was observed. Thus, the patterned cell culture microdevice proposed here could be applicable to analysis of cellular functions.     

Gate length scalability of n-MOSFETs down to 30 nm: Comparisonbetween LDD and non-LDD structures

Gate length scalability of LDD and non-LDD n-MOSFETs are investigated in terms of resistance to short-channel effects. Extremely small gate electrodes are delineated using electron beam direct writing and highly selective dry-etching techniques. An LDD MOSFET with As-implanted 15-nm-deep junctions shows a superior scalability down to 30 nm. In contrast, in the case of a non-LDD MOSFET having Sb-δ-doped 18-nm-deep junctions, the drain induced barrier lowering (DIBL) mechanism limits the minimum gate length to around 80 nm, at which favorable device operation is achieved. The difference between built in potential of source/drain junctions (around 0.1 eV) of LDD and non-LDD devices is found to remarkably affect short channel characteristics in the sub-0.1-μm region     

Suppressive Fair Buffer Management Policy for Intermittently Connected Mobile Ad Hoc Networks

Wireless Personal Communications - We propose a suppressive fair buffer management policy for intermittently connected mobile ad-hoc networks. So far, several buffer management policies have been...     

Fabrication of MOD-derived YBCO films on [001]LaAlO/sub 3/ and their application to /spl lambda//4 CPW SIR BPFs

Chemically derived epitaxial thin films of YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) are fabricated on [001]LaAlO/sub 3/ substrates by the metalorganic-deposition (MOD) process, which has advantages of high quality, nonvacuum, low-cost, and large-scale production of high-T/sub c/ superconducting films. The MOD-derived YBCO films have a sharp transition at the critical temperature (90.4 K) and a high-quality film with a surface resistance of 0.13 m/spl Omega/ (30 K, 9.98 GHz) is obtained. As a microwave application, simple and compact bandpass filters (BPFs) using /spl lambda//4 coplanar-waveguide. stepped-impedance resonators are demonstrated on the YBCO films. A two-stage Chebyshev BPF of center frequency of 5.731 GHz, bandwidth of 135 MHz, and insertion loss of 0.29 dB with little input power dependency in a power range less than 10 dBm is realized on the film.     

A low-impedance open-bitline array for multigigabit DRAM

The noise-generating mechanisms inherent in the open-bitline DRAM array using the 6F² (F: feature size) memory cells and techniques for reducing the noise are described. The sources of differential noise coupled to the paired bitlines laid out in two arrays are the p-well, cell plate, and the group of nonselected wordlines. It was found, by simulation and by experiment with a 0.13-μm 256-Mb test chip, that the level of noise is dramatically reduced by using a low-impedance array with careful layout featuring low-resistivity materials, tight bridging between pairs of adjacent arrays, and a small array, achieving a comparable level of noise to that seen in the twisted and folded-bitline array. On basis of these results, it turns out that the open-bitline array has a strong chance of revival in the multigigabit generation, as long as these noise reduction techniques are applied     

Purification and characterization of the Clostridium josui porphobilinogen deaminase encoded by the hemC gene from a recombinant Escherichia coli

The porphobilinogen deaminase encoded by the Clostridium josui hemC gene was purified from a recombinant Escherichia coli strain and its properties were characterized. The optimal temperature and pH of the purified enzyme were 65 degrees C and 7.0, respectively. This enzyme was quite thermostable: it retained 86% of the original activity after incubation at 70 degrees C for 1 h. The Km and Vmax values of the enzyme were 65 microM and 3.3 micromol/h/mg for porphobilinogen, respectively.     

A New Approach to Suppress the Effect of Machining Error for Waveguide Septum Circular Polarizer at 230 GHz Band in Radio Astronomy

A new stepped septum-type waveguide circular polarizer (SST-CP) was developed to operate in the 230 GHz band for radio astronomy, especially submillimeter-band VLBI observations. For previously reported SST-CP models, the 230 GHz band is too high to achieve the design characteristics in manufactured devices because of unexpected machining errors. To realize a functional SST-CP that can operate in the submillimeter band, a new method was developed, in which the division surface is shifted from the top step of the septum to the second step from the top, and we simulated the expected machining error. The SST-CP using this method can compensate for specified machining errors and suppress serious deterioration. To verify the proposed method, several test pieces were manufactured, and their characteristics were measured using a VNA. These results indicated that the insertion losses were approximately 0.75 dB, and the input return losses and the crosstalk of the left- and right-hand circular polarization were greater than 20 dB at 220–245 GHz on 300 K. Moreover, a 230 GHz SST-CP was developed by the proposed method and installed in a 1.85-m radio telescope receiver systems, and then had used for scientific observations during one observation season without any problems. These achievements demonstrate the successful development of a 230 GHz SST-CP for radio astronomical observations. Furthermore, the proposed method can be applicable for observations in higher frequency bands, such as 345 GHz.     

The structure and maximal gain of CW-pumped GaP-AlGaP semiconductor Raman amplifier with tapers on both sides

GaP-AlGaP waveguide semiconductor Raman amplifiers (SRAs) tapered on both sides were fabricated by high-quality GaP-AlGaP liquid phase epitaxial growth using the temperature difference method with controlled vapor pressure (TDM-CVP), photolithography patterning, and reactive ion etching with PCl/sub 3/ gas. Although the finesse of the both-sides-tapered waveguide SRA is lower than previous values for straight or one-side-tapered waveguides, the CW-pumped gain was maximized, and a maximal gain of 4.2 dB was obtained. This letter presents the effect of tapered structures in SRA with CW pumping amplification.     

Block Copolymer Permeable Membrane with Visualized High‐Density Straight Channels of Poly(ethylene oxide)

A simple fabrication, scalable to centimeter scale, of a permeable membrane made of block copolymer containing molecular transport channels is demonstrated by coating photo‐crosslinkable liquid‐crystalline block copolymer, consisting of poly(ethylene oxide) (PEO) and poly(methacrylate) (PMA) bearing stilbene (Stb) mesogens in the side chains (PEO₁₁₄‐b‐PMA(Stb)₅₂), onto a sacrificial cellulose acetate film substrate. After thermal annealing, perpendicularly aligned and hexagonally arranged PEO cylindrical domains with a surface density of 10¹¹ cm^?2 were formed and then fixed efficiently by photo‐crosslinking the stilbene moieties in the PMA(Stb) domains by [2 + 2] dimerization. The fully penetrating straight PEO cylindrical domains across the 480‐nm‐thick membrane were well‐defined and visualized as molecule‐transport channels. After exfoliated by removal of the cellulose acetate layer, the membrane could be transferred onto another substrate by either scooping or a horizontal lifting method. Throughout the processes, the fully penetrating PEO channels across the membrane are preserved to open at both ends. A simple permeation experiment demonstrates that rhodamine dyes permeate efficiently through the PEO cylindrical channels of the annealed membrane but not across a non‐annealed one.     

Photodetectors monolithically integrated on SOI substrate foroptical pickup using blue or near-infrared semiconductor laser

We made photodetectors on a silicon-on-insulator (SOI) substrate by a 0.35-μm BiCMOS fabrication process to detect the signal light used in an optical disk system. Investigating their characteristics at two wavelengths, 410 and 780 nm, for different structures, we found that the thickness of the silicon crystalline layer on the insulator strongly affected the frequency response at the longer wavelength, while the cutoff frequency was over 500 MHz for the shorter wavelength. We also simulated the frequency response