Solution-Processed High-<Emphasis Type="Italic">k</Emphasis> Dielectric,ZrO<Subscript>2</Subscript>, and Integration in Thin-Film Transistors

We report a sol–gel method to deposit a high-k dielectric, zirconium oxide (ZrO₂). This solution-based approach has advantages of easy processing and low fabrication cost. Effects of annealing temperatures on dielectric properties, such as tunneling current density and capacitance density, are reported. Morphological and chemical characterizations suggest that the process temperature can be kept at or below 300°C. We have employed the solution-processed ZrO₂ dielectric in a zinc tin oxide thin-film transistor. Saturation mobility of 4.0 cm²/V s at operating voltage of 2 V has been observed. The measured subthreshold swing is 74 mV/decade, which is the result of the combination of an electronically clean dielectric/semiconductor interface and high insulator capacitance.     

A Novel Uplink MIMO Transmission Scheme in a Multicell Environment

Uplink multiple-input multiple-output (MIMO) transmission scheme is developed for time division duplex (TDD) systems in a multicell environment. We propose a precoding scheme that maximizes the total achievable rate and works in the decentralized manner with only locally available channel state information (CSI) at each transmitter. We first establish and solve a decentralized optimization problem for the case of multiple-input single-output (MISO) channels, introducing a new precoding design metric called signal to generated interference plus noise ratio (SGINR). By extending the result to general MIMO channels, we propose an SGINR-based precoding scheme where the number of transmit streams is selected adaptively to the surrounding environments. Simulation results confirm that the proposed precoding scheme offers significant throughput enhancement in multicell environments.     

Downlink Capacity Analysis of Collaborative Crossed Timeslots in CDMA TDD Systems

Traffic asymmetry between uplink and downlink is expected to be a remarkable 3G characteristic in cellular mobile multimedia communications. CDMA system with TDD is a good solution to this traffic asymmetry. However, the level of traffic asymmetry may be significantly different from a cell to another cell. To tackle this problem and to support the traffic hot spot, crossed slots are examined. The use of crossed slots is restricted within a certain range of a cell by investigating the inter-cell interference and the maximum planned load factor. We examine the radius of inner zone and discuss the capacity of downlink crossed slots for various neighbor cell environments. Computational results show that the capacity increase in the target cell is outstanding by reducing the service range of neighbor cells. When all six neighbors reduce their service range by 20%, the capacity at target cell crossed slot is increased by 35%. Monte Carlo simulation is performed with large scale fading to verify the numerical analysis.

High-performance C60 and picene thin film field-effect transistors with conducting polymer electrodes in bottom contact structure

C₆₀ and picene thin film field-effect transistors (FETs) in bottom contact structure have been fabricated with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) electrodes for a realization of mechanical flexible organic FETs. The C₆₀ thin film FETs showed n-channel enhancement-type characteristics with the field-effect mobility μ value of 0.41 cm² V^?1 s^?1, while the picene thin film FET showed p-channel enhancement-type characteristics with the μ of 0.61 cm² V^?1 s^?1. The μ values recorded for C₆₀ and picene thin film FETs are comparable to those for C₆₀ and picene thin film FETs with Au electrodes.     

Designing a Stable Cathode with Multiple Layers to Improve the Operational Lifetime of Polymer Light‐Emitting Diodes

The short device lifetime of blue polymer light‐emitting diodes (PLEDs) is still a bottleneck for commercialization of self‐emissive full‐color displays. Since the cathode in the device has a dominant influence on the device lifetime, a systematic design of the cathode structure is necessary. The operational lifetime of blue PLEDs can be greatly improved by introducing a three‐layer (BaF₂/Ca/Al) cathode compared with conventional two‐layer cathodes (BaF₂/Al and Ba/Al). Therefore, the roles of the BaF₂ and Ca layers in terms of electron injection, luminous efficiency, and device lifetime are here investigated. For efficient electron injection, the BaF₂ layer should be deposited to the thickness of at least one monolayer (～3 nm). However, it is found that the device lifetime does not show a strong relation with the electron injection or luminous efficiency. In order to prolong the device lifetime, sufficient reaction between BaF₂ and the overlying Ca layer should take place during the deposition where the thickness of each layer is around that of a monolayer.     

Nanostructured Bulk Silicon as an Effective Thermoelectric Material

Thermoelectric power sources have consistently demonstrated their extraordinary reliability and longevity for deep space missions and small unattended terrestrial systems. However, more efficient bulk materials and practical devices are required to improve existing technology and expand into large‐scale waste heat recovery applications. Research has long focused on complex compounds that best combine the electrical properties of degenerate semiconductors with the low thermal conductivity of glassy materials. Recently it has been found that nanostructuring is an effective method to decouple electrical and thermal transport parameters. Dramatic reductions in the lattice thermal conductivity are achieved by nanostructuring bulk silicon with limited degradation in its electron mobility, leading to an unprecedented increase by a factor of 3.5 in its performance over that of the parent single‐crystal material. This makes nanostructured bulk (nano‐bulk) Si an effective high temperature thermoelectric material that performs at about 70% the level of state‐of‐the‐art Si_0.8Ge_0.2 but without the need for expensive and rare Ge.     

Energy Loss Mechanism in Organic and Inorganic Light-Emitting Diodes

We report that there exists a similar energy loss mechanism in fluorescent/phosphorescent organic light-emitting diodes (F/P OLEDs) and inorganic semiconductor optoelectronic devices [1310-nm InGaAsP-InP superluminescent diodes (SLDs)]. The loss of energy in inorganic SLDs based on thickness-altered asymmetric multiple quantum-well (QW) structures occurs depending sensitively on the sequence of QWs, an analogous behavior also observed in F/P OLEDs depending on the sequence of phosphorescent dopants for different colors. It is shown that such an energy (power) loss is evitable by placing long-wavelength QWs near the p-side in inorganic SLDs and similarly long-wavelength phosphors near the hole-transporting layer in F/P OLEDs.     

A 3-DOF MR-Compatible Device for Magic Angle Related In Vivo Experiments

The "magic angle" effect consists of the increase in signal intensity observed at a tendon or cartilage in a magnetic resonance image, when the tissue is oriented at an angle of approximately 55deg with respect to the main magnetic field B₀. The exploitation of this phenomenon is often used to assist diagnosis of tendinous and other diseases, although practical difficulties derived from positioning target tissue at the desired orientation inside closed-bore scanners has made this exploitation hard to implement. A 3-DOF MR-compatible mechatronic system has been developed to position a variety of limbs at the magic angle inside a closed- bore scanner, actuated by a custom-developed pneumatic air motor. The system is capable of locating the desired anatomy with high accuracy, and is designed to position the target tissue at a minimal distance from the isocenter. The compatibility of the system is demonstrated, producing negligible artifacts and an insignificant reduction in signal to noise of the image. Preliminary clinical trials scanning the Achilles tendon of healthy volunteers prove the functionality of the device. An increase in signal intensity of up to 21-fold has been recorded in the tendon at the magic angle.     

Analysis of Failure Mechanism in Anisotropic Conductive and Non-Conductive Film Interconnections

Failure behaviors of anisotropic conductive film (ACF) and non-conductive film (NCF) interconnects were investigated by measuring the connection resistance. The four-point probe method was used to measure the connection resistance of the adhesive joints constructed with Au bump on Si chip and Cu pad on flexible printed circuit. The interconnection reliability was evaluated by multiple reflow process. The connection resistance of the ACF joints was markedly higher than that of NCF joints, mainly due to the constriction of the current flow and the intrinsic resistance of the conductive particles in ACF joints. The connection resistances of both interconnections decreased with increasing bonding force, and subsequently converged to about 10 and 1 mOmega at a bonding force of 70 and 80 N, for the ACF and NCF joints, respectively. During the reflow process, two different conduction behaviors were observed: increased connection resistance and the termination of Ohmic behavior. The former was due to the decreased contact area caused by z-directional swelling of the adhesives, whereas the latter was caused by either contact opening in the adhesive joints or interface cracking.