An efficient numerical approach, for determining the dispersioncharacteristics of dual-mode elliptical-core optical fibers

Based on vectorial formulations which combine the surface integral equation method and the finite-element method, a novel numerical approach is proposed for calculating the dispersion coefficients of dual-mode elliptical-core fibers with arbitrary refractive index profiles. By differentiating the original formulations involving the propagation constant β and the guided mode fields H_x and H_y once and twice with respect to the normalized frequency V, the new formulations for {dβ/dV, dH_x/dV, dH_y/dV} and for {d²β/dV², d² H_x/dV², d²H_y/dV² } are obtained respectively. Once {β, H_x, H_y } is solved through the eigenvalue procedure which dominates the computing time, only a few matrix manipulations are required to obtain {dβ/dV, dH_x/dV, dH_y/dV} and {d²β/dV², d²H_x/dV² , d²H_y/dV²}. Some numerical examples are examined to see the influence of different refractive index distributions with dips on the dispersions of the four nondegenerate LP ₁₁ modes for elliptical-core fibers     

A new simplified threshold-voltage model for n-MOSFETs with nonuniformly doped substrate and its application to MOSFET's miniaturization

The formulation, verification, and application of a new simplified 2-D threshold voltage model for n-MOSFETs with nonuniformly doped substrate profile are provided, in which the averaged normal field at the Si/SiO/sub 2/ interface in the active channel is quoted from a simplified solution of two-dimensional Poisson equation using the Green function technique. Starting with the expression of this average normal field, a simple threshold-voltage model for short-channel n-MOSFETs with nonuniformly doped substrate profile is explicitly expressed in terms of device structures and terminal voltages by considering parabolic source-drain boundary potentials. Moreover, the effects of the junction depth on the threshold voltage are examined in detail. It is shown that the DIBL effect cannot be completely eliminated by simply increasing the substrate doping concentration. Comparisons among developed model, 2-D numerical analysis, and experimental data have been made and the accuracy of the developed analytical model has been verified. In addition, a direct extension of our model to the case of uniformly doped substrates leads to a new constraint equation for device miniaturization.<>     

MOSFET亚阈特性分析与低温按比例缩小理论的研究

器件尺寸按比例缩小是实现超大规模集成电路的有效途径，但寄生和二级效应却将器件限在一定的水平，本文在对比分析常温与低温下小尺寸器件效应的基础上，重点研究了ＭＯＳ器件亚阈特性对器件性能及按比例缩小的影响，并根据低温工作的特点，提出了ＭＯＳ器件一种低温按比例缩小规则，该原则对低温器的优化设计，从而更大程度在提高电路与系统性能具有重要的指导意义。     

A millimeter-wave omnidirectional dielectric rod metallic gratingantenna

A new millimeter-wave omnidirectional dielectric rod metallic grating antenna is investigated theoretically and experimentally, in this paper. The radiation characteristics of the antenna are carefully investigated by a rigorous formulation for the TE₀₁-mode and TM₀₁-mode excitation in the Ka-band frequency range. Based on the analysis, an omnidirectional antenna excited by the TE₀₁ mode is designed and measured. The measured results are compared with theoretical predictions and good agreement is found. Extensive numerical results are given to establish some useful guidelines for the design of the omnidirectional antenna     

用于X光激光实验的反射式线聚焦光学系统的设计和分析

基于三维光线追迹的象差计算,对卢瑟福实验室用离轴球面反射线聚焦系统作了分析。然后,首次提出了用于X光激光实验的两类新的反射式线聚焦构型,即反射式光楔列阵和光锥列阵系统,并作了计算。最后,对所得结果作了比较和讨论。     

珠江口盆地(西部)早第三纪古环境分析

珠江口盆地(西部)早第三纪的古环境变迁与盆地的形成及演化紧密相关。早第三纪盆地演化经历了4个阶段。第一阶段,盆地早期拉张,以粗粒沉积物沉积为主,部分地域发育小湖盆。第二阶段,盆地稳定下沉,是富营养性湖泊的鼎盛期,形成优质湖相烃源岩。第三阶段,湖盆萎缩,煤系沼泽发育,形成湖相和煤系两类重要烃源岩。第四阶段,古湖泊消亡,海水漫进,滨浅海砂岩体发育,形成油气勘探的有利目的层。     

Menke条件下甲苯的固体酸催化选择性硝化

在Ｍｅｎｋｅ条件下，固体酸能对硝酸盐硝化甲苯的位置选择性产生影响，在所选的几种固体酸中皂土和高岭土是较好的对位选择性硝化催化剂，能使硝化产物的对邻比率达１．１～１．５。     

铯原子激光共振电离

用Ｎｄ：ＹＡＧ及其泵浦的染料激光进行铯原子三步共振电离。求解了非饱和共振过程速率方程，计算出基态和激发态共振吸收截面，给出电离效率分别与激发电离速率以及作用时间的变化关系，得到饱和激发电离的流量条件和通量条件。