Microstructural development and electrical properties of lead zirconate titanate composite films

Dihydroxyalcohols (DIOL route) and 2-methoxyethanol (MOE route) are two of the most commonly used solvents in preparing sol-gel lead zirconate titanate (PZT) films. The employment of the PT(MOE) film as a buffer layer for PZT(DIOL) films not only offers advantages of more precise film thickness and better adhesion to substrate, but also reduces the crystallization temperature, improves the surface smoothness, and increases the grain size of the PZT(DIOL)/PT(MOE) composite films. The PT (MOE) buffer layer also improves electrical properties, such as polarization-electric field behavior, fatigue endurance, and leakage behavior, of PZT films.     

The formation of ilmenite FeTiO3 powders by a novel liquid mix and H2/H2O reduction process

FeTiO₃ powder was prepared via a liquid mix and H₂/H₂O reduction process. First, an intermediate compound was synthesized by a liquid mix process. This precursor compound to FeTiO₃ was characterized by thermal analysis (TG/DTA) and Fourier Transform Infrared spectroscopy (FT-IR). Second, the precursor was annealed in the air, H₂/H₂O(g) mixing gas stream, respectively. The obtained powder was characterized by X-ray diffraction (XRD), energy dispersive X-ray analysis spectroscopy (EDAX) and scanning electron microscope (SEM). It was showed that pure and homogenous FeTiO₃ was successfully obtained below 600 °C.     

高强度放电灯电子镇流器在城市照明中的应用

本文介绍了HID电子镇流器在城市照明中的节能应用。     

Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study

This paper simulates a kind of new sub-50 nm n-type double gate MOS nanotransistors by solving coupled Poisson-Schrödinger equations in a self-consistent manner with a finite element method, and presents a systematic simulation-based study on quantum-mechanical effects, gate leakage current of FinFETs. The simulation results indicate that the deviation from the classical model becomes more important as the gate oxide, gate length and Fin channel width becomes thinner and the Fin channel doping increases. Gate tunneling current density reduces with the body thickness decreasing. Excessive scaling increases the gate current below Fin thickness of 5 nm. The gate current can be dramatically reduced beyond 10¹⁷ cm⁻³ with the Fin body doping increasing. In order to understand the influence of electron confinement, quantum mechanical simulation results are also compared with the results from the classical approach. Our simulation results indicate that quantum mechanical simulation is essential for the realistic optimization of the FinFET structure.     

PowerPoint2003中内、外部声音的运用和控制技术

介绍PowerPoint2003中内、外部声音的运用与控制技术.     

基于模糊AHP的TOPSIS评估方法研究

对于模糊环境下的评估,存在固有的不确定性和不精确性信息比较的情况。在AHP的框架下,通过三角模糊数表示元素之间的比较比率,定义了两个模糊数之间的距离,利用模糊综合扩展分析方法构造决策矩阵。根据理想近似方法,通过计算到正理想解和负理想解的距离求出每个方案的贴近系数,得出候选者的评估顺序,并举例说明了应用这个方法的计算过程。     

蓝芽技术的安全研究

本文首先提出蓝牙技术,然后分析了蓝牙的安全问题,最后,介绍了蓝牙技术的安全机制。     

电视节目远程录制与点播系统的设计及应用

在当今社会,每天全国卫星电视网传送出近百套电视节目,覆盖了文化、教育、科技、体育等大量有价值的内容,能否让希望保存这些资源的人或由于某些原因无法及时看到并录制自己所关注节目的人方便快捷地获得这些电视资源?电视节目远程录制与点播系统就可以让使用者很容易地获得所需的电视资源,本文将介绍本系统的设计思想和编程技术。