TEM characterization of Ge precipitates in an Al-1.6at% Ge alloy

The growth mechanism and morphology of Ge precipitates in an Al-Ge alloy was characterized by a combination of in-situ transmission electron microscopy, high-resolution transmission electron microscopy and three-dimensional electron tomography. Anisotropic growth of rod-shaped Ge precipitates was observed by in-situ transmission electron microscopy over different time periods, and faceting of the precipitates was clearly seen using high-resolution transmission electron microscopy and three-dimensional electron tomography. This anisotropic growth of rod-shaped Ge precipitates was enhanced by vacancy concentration as proposed previously, but also by surface diffusion as observed during the in-situ experiment. Furthermore, a variety of precipitate morphologies was identified by three-dimensional electron tomography.     

Recurrent infomax generates cell assemblies, neuronal avalanches, and simple cell-like selectivity

Recently multineuronal recording has allowed us to observe patterned firings, synchronization, oscillation, and global state transitions in the recurrent networks of central nervous systems. We propose a learning algorithm based on the process of information maximization in a recurrent network, which we call recurrent infomax (RI). RI maximizes information retention and thereby minimizes information loss through time in a network. We find that feeding in external inputs consisting of information obtained from photographs of natural scenes into an RI-based model of a recurrent network results in the appearance of Gabor-like selectivity quite similar to that existing in simple cells of the primary visual cortex. We find that without external input, this network exhibits cell assembly-like and synfire chain-like spontaneous activity as well as a critical neuronal avalanche. In addition, we find that RI embeds externally input temporal firing patterns to the network so that it spontaneously reproduces these patterns after learning. RI provides a simple framework to explain a wide range of phenomena observed in in vivo and in vitro neuronal networks, and it will provide a novel understanding of experimental results for multineuronal activity and plasticity from an information-theoretic point of view.     

Multi-contact vertical ladder climbing with an HRP-2 humanoid

We describe the research and the integration methods we developed to make the HRP-2 humanoid robot climb vertical industrial-norm ladders. We use our multi-contact planner and multi-objective closed-loop control formulated as a QP (quadratic program). First, a set of contacts to climb the ladder is planned off-line (automatically or by the user). These contacts are provided as an input for a finite state machine. The latter builds supplementary tasks that account for geometric uncertainties and specific grasps procedures to be added to the QP controller. The latter provides instant desired states in terms of joint accelerations and contact forces to be tracked by the embedded low-level motor controllers. Our trials revealed that hardware changes are necessary, and parts of software must be made more robust. Yet, we confirmed that HRP-2 has the kinematic and power capabilities to climb real industrial ladders, such as those found in nuclear power plants and large scale manufacturing factories (e.g. aircraft, shipyard) and construction sites.     

Object detection based on a robust and accurate statistical multi-point-pair model

In this paper, we propose a robust and accurate background model, called grayscale arranging pairs (GAP). The model is based on the statistical reach feature (SRF), which is defined as a set of statistical pair-wise features. Using the GAP model, moving objects are successfully detected under a variety of complex environmental conditions. The main concept of the proposed method is the use of multiple point pairs that exhibit a stable statistical intensity relationship as a background model. The intensity difference between pixels of the pair is much more stable than the intensity of a single pixel, especially in varying environments. Our proposed method focuses more on the history of global spatial correlations between pixels than on the history of any given pixel or local spatial correlations. Furthermore, we clarify how to reduce the GAP modeling time and present experimental results comparing GAP with existing object detection methods, demonstrating that superior object detection with higher precision and recall rates is achieved by GAP.     

Dependence of self-heating effects on operation conditions and device structures for polycrystalline silicon TFTs

Self-heating, a degradation mechanism of n-channel poly-Si thin-film transistors (TFTs) due to bias stress, has been investigated. The aim of this work is to study this effect in depth to be able to propose a device structure designed to reduce it. The variation of the threshold voltage (V/sub t/) shift with the stress-pulsewidth is related to the temperature rise due to the self-heating effect that depends on the stress-pulsewidth. Electron trapping in the oxide caused by the bias stress is considered to be enhanced by the TFT temperature rise owing to the self-heating. We show that copper-film-based TFTs, which have a substrate made of an extremely thin glass layer and a copper film exhibit much reduced self-heating and thus a decrease of V/sub t/ shift caused by the bias stress. These observations are interpreted using numerical simulations to estimate the temperature rise in the poly-Si channel region due to Joule heating.     

Role of number of consecutive voltage zero-crossings in propagation of water trees in polyethylene

Effects of superposition of a low-frequency (0.1 to 50 Hz) voltage and a high-frequency 2 kHz voltage on the growth of water trees in polyethylene are examined. It has become clear that both the number of total voltage zero-crossings during the whole voltage application period and the number of consecutive voltage zero-crossings in the instant of the polarity reversal of the low-frequency voltage play important roles in the length and shape of water trees. Namely, the water tree length becomes longer as the number of total zero-crossings increases. Furthermore, among the voltages with the same number of total zero-crossings, the length becomes even longer with a prolonged shape in the direction of electric field as the number of consecutive zero-crossings increases. Effects of superposition of a high-frequency voltage onto a dc voltage are also examined. In this case, the dc voltage seems not to have any influence to the tree growth. By assuming the presence of space charge around the water-tree tip, the effective zero-crossings become only sensitive to the high-frequency component. Therefore, this result also indicates that the number of voltage reversals at the tree tip plays a crucial role in the growth of water trees.     

Frequency characteristics of stiffness and damping effect of ferro fluid bearing

Damping characteristics and frequency characteristics of ferro fluid bearing (FFB) spindles were measured using a high-frequency vibration base driven by a piezo actuator. Using the high-frequency vibration base, high-frequency excitation was added to ferro fluid bearing spindles mounted on the vibration base, and it was proved that ferro fluid bearing spindles have effective damping. And the damping effect became larger with higher spindle rotational speed. Also we have measured spindle runout of a ferro fluid bearing spindle using a lock-in amplifier to increase S/N ratio and succeeded to measure nano meter order displacements.     

Back‐channel‐etched thin‐film transistor using c‐axis‐aligned crystal In–Ga–Zn oxide

Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c‐axis alignment, its a‐axis and b‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs.