浅论社会公正的重要性及其实现方法

社会公正是我们永恒追求的理想,对我们极其重要。概括起来说其作用如下:是巩固中国共产党执政地位的需要,是社会主义的本质要求,是整个社会价值体系的首要价值,是经济发展的推动力,是社会稳定的基础,是凝聚力量的源泉。但目前社会不公的现象屡见不鲜,形势比较严竣,要扭转这种局面,我们应该从切实实现司法公正、优化财政支出结构、解决三农问题、维护市场经济秩序、完善社会保障制度等几个方面着手。     

基于混合设计法的广义零件设计及其计算机实现

提出了广义零件的概念，并以某类广义零件(电子产品的壳体类零件)的设计为任务，应用现代设计方法的基本思想，对其设计中的Bottom-up与Top-down设计方法进行比较，总结两者的优缺点，提出了针对广义零件设计行之有效的流程方案，即基于单元特征构建及整体装配的零件设计方法.该设计方法支持并行工程及协同设计，易于数字化实现，并以某广义零件为例，通过通用3D设计软件，使该设计方法在计算机上得以实现.     

大型超市钢结构的制作与安装技术

结合马钢花园大型超市钢结构工程实践,介绍了马钢热轧H型钢在大型民用公共建筑中的制作与安装技术。     

弘扬地域文化创造人文校园

通过分析在开展人文教育、实现校园人文旅游和创造地域文明的要求下,提出了建设校园人文景观的意义;从校园文化内涵的挖掘、校园人文景观的规划途径两方面探讨了校园人文景观的规划策略,并以河北省实验中学校园景观规划加以佐证。     

基于时／空滤波噪声抑制算法和活动轮廓模型的血管内超声图像边缘提取

为解决血管内超声（IVUS）图像中严重的血液斑点噪声影响边缘提取方法的有效性问题，采用一种时／空滤波方法对IYUS图像进行降噪预处理，基于活动轮廓模型（Snake模型）和IVUS图像的边缘对比度特征量，利用Hopfield神经网络并结合模拟退火算法自动提取IVUS图像的冠脉血管壁内、外膜边缘．实验结果表明，该方法对序列IVUS图像处理有较好的可重复性和鲁棒性．     

DCS系统控制逻辑与联锁的分析及改进

针对DCS系统（分散控制系统班制逻辑、联锁上出现的问题进行分析和解决，阐述了完善改进控制逻辑的方法，提高了设备稳定运行。保证了机组长周期安全经济运行。     

产胞外耐高温纤维素酶细菌的获得和酶的纯化及性质研究

对从高温堆肥中分离得到的一株产胞外耐高温纤维素酶的细菌进行了生理生化鉴定,结果显示其属于嗜热脂肪芽孢杆菌。对其所产纤维素酶进行了分离纯化,该酶反应的最适温度约为66℃,最适pH值为7.0,至少有8个亚基。     

A 231-MHz, 2.18-mW 32-bit Logarithmic Arithmetic Unit for Fixed-Point 3-D Graphics System

A 32-bit fixed-point logarithmic arithmetic unit is proposed for the possible application to mobile three-dimensional (3-D) graphics system. The proposed logarithmic arithmetic unit performs division, reciprocal, square-root, reciprocal-square-root and square operations in two clock cycles and powering operation in four clock cycles. It can program its number range for accurate computation flexibility of 3-D graphics pipeline and eight -region piecewise linear approximation model for logarithmic and antilogarithmic conversion to reduce the operation error under 0.2%. Its test chip is implemented by 1-poly 6-metal 0.18-mum CMOS technology with 9-k gates. It operates at the maximum frequency of 231 MHz and consumes 2.18 mW at 1.8-V supply     

Modeling growth rate of HfO2 thin films grown by metal-organic molecular beam epitaxy

HfO₂ dielectric layers were grown on the p-type Si (100) substrate by metal-organic molecular beam epitaxy (MOMBE). Hafnium-tetra-butoxide, Hf(O·t-C₄H₉)₄ was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the HfO₂ film and intermediate SiO₂ layer were measured by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The properties of the HfO₂ layers were evaluated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), high frequency (HF) capacitance-voltage (C-V) measurement, and current-voltage (I-V) measurement. C-V and I-V measurements have shown that HfO₂ layer grown by MOMBE has a high dielectric constant (k) of 20-22 and a low-level of leakage current density. The growth rate is affected by various process variables such as substrate temperature, bubbler temperature, Ar and O₂ gas flows and growth time. Since the ratio of O₂ and Ar gas flows are closely correlated, the effect of variations in O₂/Ar flow ratio on growth rate is also investigated using statistical modeling methodology.     

Abnormal drain current (ADC) effect and its mechanism in FD SOI MOSFETs

A new type of abnormal drain current (ADC) effect in fully depleted (FD) silicon-on-insulator (SOI) MOSFETs is reported. It is found that the drain current becomes abnormally large for specific front- and back-gate voltages. The drain current exhibits a transient effect due to the floating body behavior and no longer follows the conventional interface coupling theory for these specific front- and back-gate bias conditions. It is shown that the ADC can be generated by the combination of gate-induced drain leakage, transient effects, and parasitic bipolar transistor action in FD SOI MOSFETs.