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121.
The purpose of this study was to analyze the symbolization of colors as cultural codes, based on costume colors. In order to study the significance of colors in cultural changes, we carried out a quantitative analysis and interpreted it from the perspective of cultural semiotics. The range of this study was focused on Korean costume colors, over diverse diachronic stages of Korean culture. For this study 1535 color samples were collected, measured with a spectrophotometer, and analyzed quantitatively according their diachronic stages of origin. As a result, red, blue, and yellow were found to be the most frequently used colors during the Chosun Dynasty, a period based on Confucianism. These colors acted as cultural codes with cultural significance. During the Modern times pink, light blue, and black increased in frequency and represented the reception of western culture, the changing sex role of women in society, and utilitarianism. In these days, neutral colors and grayish tones of all colors are the most significant colors of high frequency. The use of such colors is closely related to industrialization, mechanization, functionalism, and the changes of women's sex roles in the societies. They are used as cultural codes, especially to emphasize a rational and masculine image rather than a feminine image. © 2006 Wiley Periodicals, Inc. Col Res Appl, 32, 71–79, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/col.20290  相似文献   
122.
Studies the anomalous variations of the OFF-state leakage current (IOFF) in n-channel poly-Si thin-film transistors (TFTs) under static stress. The dominant mechanisms for the anomalous IOFF can be attributed to (1) IOFF increases due to channel hot electrons trapping at the gate oxide/channel interface and silicon grain boundaries and (2) IOFF decreases due to hot holes accumulated/trapped near the channel/bottom oxide interface near the source region. Under the stress of high drain bias, serious impact ionization effect will occur to generate hot electrons and hot holes near the drain region. Some of holes will be injected into the gate oxide due to the vertical field (~(V_Gstress V_Dstress)/T OX) near the drain and the others will be migrated from drain to source along the channel due to lateral electric field (~V_Dstress/LCH)  相似文献   
123.
A general model, based on double film theory, is developed to study absorption with chemical reactions. In the liquid film region, the model is a set of differential equations that describe the mass transfer accompanying several chemical reactions; the resolution of the system is achieved by the finite difference method using an implicit scheme combined with Newton's method. Continuity equations and equilibrium coefficients are exploited in the treatment of the bulk region, which is based on the Newton‐Raphson method; the results are used directly as boundary conditions in the liquid film equations. Maxwell‐Stefan equations have been used as a rigorous approach in this model.  相似文献   
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A method is proposed which avoids many limitations associated with traditional B-coefficient loss coefficient calculation. The proposed method, unlike the traditional B-coefficient method, is very fast and can handle line outages. The method utilizes network sensitivity factors which are established from DC load flow solutions, Line outage distribution factors (ODFs) are formulated using changes in network power generations to simulate the outaged line from the network. The method avoids the use of complicated reference frame transformations based upon Kron's tenser analysis. The necessity of data normalization used in least squares and the evaluation of the slope of &thetas;j versus PGn is not necessary with the proposed method. Using IEEE standard 14-bus and 30-bus systems, the method's results are compared against results obtained from an AC load flow program (LFED). The method's solution speed is compared to that of the LFED method, the base case database method and the conventional B-coefficient method based on Ajn-factor. The proposed method is easy to implement and, when compared to other methods, has exhibited good accuracy and rapid execution times. The method is well suited to online dispatch applications  相似文献   
127.
An aperture-coupled offset dual-disk dielectric resonator antenna of very high permittivity is investigated experimentally. It is found that the new configuration offers an impedance bandwidth 4.6 times wider than that of the single element. The voltage standing wave ratio, radiation patterns, and antenna gain of the configuration are studied  相似文献   
128.
Abstract: This article combines the neighborhood effects and spatial mismatch frameworks into a single model explaining how geographic factors contribute to unemployment. Using National Longitudinal Survey of Youth (1979) data, I estimate a two‐step model that separately models the effects of segregation and spatial mismatch. The first model predicts educational attainment as a function of exposure to residential segregation as a youth. The second model predicts unemployment probability as an adult as a function of educational attainment and spatial mismatch. The empirical results show that segregation does have discernable effects on educational attainment for blacks, but not for whites. I also find that spatial mismatch affects unemployment probability for blacks, but such an effect is hardly present for whites. A partial equilibrium analysis using predictions from the models shows that large changes in either segregation levels or the central city/suburban distribution of the black population would yield only moderate decreases in unemployment probability for the black population overall. Yet despite small predicted effects, these results should be viewed with caution because the general equilibrium effects of a large scale movement of blacks and whites across metropolitan space are largely impossible to predict with current data.  相似文献   
129.
We have designed a mixer Schottky barrier diode (SBD) for use in the submillimeter wave region with a structure optimized for minimum noise temperature. The dependence of mixer noise temperature upon thickness and doping density of the epitaxial layer and diode diameter of SBDs was simulated within the framework of existing theories. Special care was taken to formulate the SBD current-voltage and capacitance-voltage relations in a way that correctly describes the behavior of real SBDs.  相似文献   
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