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101.
P Sánchez García 《Canadian Metallurgical Quarterly》1997,114(1):157-63; discussion 164-7
102.
Z Hradil 《Canadian Metallurgical Quarterly》1992,46(5):R2217-R2220
103.
Translated from Khimicheskoe i Neftyanoe Mashinostroenie, No. 1, pp. 14–15, January, 1992. 相似文献
104.
The Vesilind settling velocity function forms the basis of flux theory used both in state point analysis (for design and capacity rating) and one-dimensional dynamic models (for dynamic process modelling). This paper proposes new methods to address known shortcomings of these methods, based on an extensive set of batch settling tests conducted at different scales. The experimental method to determine the Vesilind parameters from a series of bench scale settling tests is reviewed. It is confirmed that settling cylinders must be slowly stirred in order to represent settling performance of full scale plants for the whole range of solids concentrations. Two new methods to extract the Vesilind parameters from settling test series are proposed and tested against the traditional manual method. Finally, the same data set is used to propose an extension to one-dimensional (1-D) dynamic settler models to account for compression settling. Using the modified empirical function, the model is able to describe the batch settling interface independently of the number of layers. 相似文献
105.
The optimal design of the high power plate and grid modulated selective amplifier is examined in this paper. For the analysis purposes, the linear model of constant plate current characteristics for HF power triode is applied. The carrier wave state of the unmodulated amplifier is chosen so to enable the realization of the high levels of modulation. The results are obtained immediateZy, and the estimated error is acceptable. The estimated characteristic values of this high power and high efficiency HF amplifier are shown in the corresponding diagrams. 相似文献
106.
A new analytical method has been developed for the determination of the reactive lysine content of soya bean protein. The method is based on the reaction of the free basic groups of the protein with 1-phenylazo-2 naphthol-6,8 disulphonic acid. With regard to the stoichiometry of the procedure, it has been proved, contrary to earlier reports, that the basic amino acids, histidine, arginine and lysine, each combine with one mole of the dye. After acylation with propionic anhydride lysine alone loses its dye reactivity. The usefulness of the proposed method has been demonstrated by the determination of the reactive lysine content of several untreated, heat-treated and acid-treated soya bean samples. The results show that heat damage of about 5% in reactive lysine content can be measured in 1·5 h with good reproducibility. 相似文献
107.
108.
Ma Z.J. Chen J.C. Liu Z.H. Krick J.T. Cheng Y.C. Hu C. Ko P.K. 《Electron Device Letters, IEEE》1994,15(3):109-111
It has been reported that high-temperature (~1100°C) N2 O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N2O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO2 interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO2 interface is essential to effectively prevent boron diffusing into the underlying silicon substrate 相似文献
109.
Shye Lin Wu Chung Len Lee Tan Fu Lei Chen C.F. Chen L.J. Ho K.Z. Ling Y.C. 《Electron Device Letters, IEEE》1994,15(4):120-122
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device 相似文献
110.
González Roberto Cortéz; Biever Joan L.; Gardner Glen T. 《Canadian Metallurgical Quarterly》1994,31(3):515
Discusses the theoretical and clinical applications of the postmodern paradigm of social constructionism as a basis for counseling culturally different clients. Such applications avoid the trap of perpetuating the status-quo when working with minority and marginalized clientele. The main points of multiculturalism and social constructionism are summarized, and issues of mutual concern to both perspectives are examined. Applications to psychotherapy are explored, and the challenges of applying the social constructionist approach to culturally competent counseling are discussed. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献