德国微装配技术研究的几个方向

德国不伦瑞克技术大学机床与加工技术研究所在微装配技术研究方面很有影响，具有代表性。文章分析总结了该所的研究成果，指出其研究方向、研究现状及尚待完善之处。     

Non-contact methods of measuring moisture concentration in external layers of building partitions II—Monitoring of the water vapour condensation on porous surfaces

This paper present the results of the investigation into a potential application of laser radiation for the detection of phase transition processes occurring on the surface layers of porous materials. An attempt was made to discuss in the approximation equations, the relationships between coefficients of the reflected light, the temperature and humidity of the surrounding environment. Laser light reflected from the porous surface carries information about the roughness of the structure. The presence of water microdrop on the surface of the porous material, as a result of condensation and thus a phase transition, leads to the phase displacement of individual rays, which is represented by different images. Therefore, a comprehensive analysis of the reflected light parameters allows a dynamic study of the phase transition phenomena without mechanical intervention.     

Photovaractor for remote optical control of microwave circuits

A photovaractor for the remote optical control of microwave circuits was studied. The photovaractor was fabricated as a p-i-n photodiode placed in a pigtailed fiber optical module. The study of the impedance in the frequency range up to 3 GHz in darkness and under illumination has shown that the photovaractor capacitance strongly depends on the incident optical power. The capacitance variation of the photovaractor diode under illumination is discussed     

Characterization of rectangular waveguide with a pseudochiral /spl Omega/ slab

A mode matching approach has been employed for evaluating the matrix S of the section of rectangular waveguide with pseudochiral /spl Omega/ slab. Scattering characteristics for different localizations of the /spl Omega/ slab in the guide are predicted numerically and verified by measurements. Based on the numerical analysis, the scattering properties of the guides are discussed. Scattering parameters are next applied in an optimization procedure to extract constitutive parameters of the /spl Omega/ slab used in experiment.     

Propagation of flicker in electric power networks due to windenergy conversions systems

Wind energy conversion systems (WECS) produce fluctuating output power, which may cause voltage fluctuations and flicker. Flicker assessment in networks may be difficult since its evaluation requires long computing time and special procedures to calculate the flicker severity index, Pst. In this paper, a frequency domain method to study flicker propagation is presented. This method is based on propagation of frequency components from WECS output currents throughout the grid. In this way, a fast flicker analysis in a network of any size can be performed. Also, an algorithm for flicker measurement in the frequency domain, which allows Pst calculation, is proposed. Several study cases have been performed, and results have been compared with time domain simulations, showing good agreement between them     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.     

Ka-band solid-state pulsed Gunn oscillator and power combiner

GaAs Gunn diodes were fabricated for pulse source application at 8 mm wave band and operated with pulsewidths of 0.05 to 2.0 microseconds and duty cycles of 0.001 to 0.01. Peak pulse output power levels of 0.8–1.2W are achieved and the maximum available power is 1.6W with the highest efficiency of 6.5 percent. A simple and compact pulsed power combiner is also given in this paper.