基于虚拟插件的SOC内核互连方法的研究

传统的IC设计方法已无法适应新的片上系统（System On a Chip,SOC）设计要求,需要根本的变革,即从以功能设计为基础的传统IC设计流程转变到以功能整合为基础的SOC设计全新流程。SOC设计以IP的设计复用和功能组装、整合来完成。随着以IP核复用为基础的SOC设计技术的发展,在实际设计时如何有效地对众多IP供应商提供IP核进行有效互联的问题日益受到重视。文章基于标准的接口协议——虚拟元件接口（VCI,Virtual Component Interface）,探索了一条快速、简便、稳定且易于验证的SOC内核互连的方案。     

线性光放大器的宽带自发辐射噪声分析

建立含有垂直光场(VCL)的线性光放大器(LOAs)稳态仿真模型,考虑了宽带噪声特性、端面反射和纵向空间烧孔效应。计算了在不同输入信号功率和垂直腔分布布喇格反射器(DBR)反射率下总的输出ASE噪声功率、噪声系数(NF)、前向和后向传输的ASE噪声光子速率和噪声谱分布的变化。结果表明,与传统光放大器(SOAs)相比,在增益非饱和区,LOA有很好的噪声钳制作用,ASE噪声几乎不随信号功率的改变而变化。在增益饱和区,破坏了VCL的钳制作用,NF有所上升,但上升的速率小于SOA。提高DBR反射率,总的输出ASE噪声功率减小,但NF有所增大。     

Design of objective lens with reflective spherical Fresnel zone plate

An objective lens composed of a spherical Fresnel zone plate mirror and aspheric mirrors is designed.The Fresnel zone plate with a spherical shape is analyzed, and the method to approximately replace the aspherical mirror with spherical Fresnel zone plate is deduced. The objective lens is designed with a single spherical Fresnel zone plate mirror and three aspherical mirrors. Under the condition of 100 × magnification,2.5 Fresnel number and 120° field angle, the modulation transfer function can reach above 40% at 0.6 line pairs/mm on the magnification side, and the distortion is less than 2.2%. This method can provide a reference for the application of Fresnel zone plate in visible light imaging, and has a bright future with the continuous development of the fabrication technique of Fresnel devices.     

A portable functional imaging instrument for psychology research based on near-infrared spectroscopy

To aid psychology researches on the function of the prefrontal cortex, a 16-channel brain functional imaging instrument based on near-infrared spectroscopy is developed. The probe of the instrument, covering a detection area of 15 cm x 4.4 cm of the prefrontal cortex, is made flexible and is easy to fix to the forehead. By employing multi-wavelength LEDs as light sources, using integrated detectors and choosing a USB-interface-based data acquisition device, the whole system is portable and convenient to use, which is good for psychological experiments. The system software is developed using Visual C++ 6.0, which controls the imaging process, measurement data plotting and storage. The maximal temporal resolution is about 100 ms. Noise and long-term drift test are given. The Valsalva maneuver experiment is used to validate the reliability of the instrument for monitoring hemodynamic changes.     

手机病毒防治方法及其发展趋势分析

首先介绍了手机病毒的基本概念和发展历史,然后重点探讨了手机病毒的防治方法、并对其发展趋势进行了深入的分析。     

新时期怎样打造一张低成本高质量的广电综合业务陬

阐述当今广电城域网组网方式的发展方向,包括全网1550nm,EPON＋EOC,光接收机后无源分配到户等等,就新时期怎样打造一张低成本高质量的广电综合业务网提出自己的看法。     

Bandwidth-reduced Brillouin optical time-domain analysis based on a quarter of the frequency of modulation

Aiming at the problem of high requirement for the signal generator in the Brillouin optical time-domain analysis(BOTDA) system, a quarter of the Brillouin frequency shift(BFS) of modulation is proposed to reduce the required bandwidth of the sensing system. A functional model for solving the intensity of each-order sideband of the output light of electro-optic modulator(EOM) is proposed and applied, so the spectrum with suppressed the carrier and the first-order sidebands while maximizing the se...     

大尺度信干比共享下的基站协作干扰协调

在基于正交频分多址接入(OFDMA)技术的蜂窝移动小区中,小区间的干扰是影响系统性能的主要因素。多点协调(CoMP)技术被视为能够协调小区间干扰的主要手段。在下行多点协作传输系统中,小区基站采用三向天线来对小区划分扇区,从而消除了相邻小区边缘处的干扰。各扇区分别计算扇区内用户的大尺度信干比(SIR),小区之间通过共享大尺度信干比信息,对各自服务的用户按照一定的规则进行匹配,对小区中心用户的SIR和边缘用户的SIR进行了折中,从而有效解决小区边缘用户由于小区间干扰带来的低信干噪比(SINR)问题。仿真结果表明,本文提出的用户匹配算法以较小的反馈开销,较大的提高了小区边缘用户的信干噪比和系统吞吐量。      

一种自适应小生境分布性保持策略

 小生境技术被广泛应用在多目标进化的分布性保持方面.但是,小生境半径不易控制等限制了其在分布性保持等方面的发展.本文提出了一种自适应小生境分布性保持策略(Adaptive Niche,AN).AN通过对Pareto解集生成最小生成树来自适应调整小生境半径,同时扩大搜索小生境半径并改变计算方法使之能够识别小生境边沿的个体,便于对其修剪与评价.通过与NSGA-II,SPEA2在不同形状测试函数上进行对比实验,结果表明,AN能够对Pareto最优面进行高效地分布性保持.     

Cu掺杂CaCu_3Ti_4O_(12)陶瓷的介电性能和晶界特征

采用传统的固相反应工艺制备了Cu掺杂的CaCu3Ti4O12(Cu-CCTO)陶瓷。采用Schottky热电子发射模型研究了其晶界特征。研究了保温时间对Cu-CCTO陶瓷的介电性能和晶界特征的影响。结果表明:保温时间从1 h延长到30 h,Cu-CCTO陶瓷在100 kHz下的介电损耗保持在0.135,相对介电常数由3 600增至20 000以上。随着保温时间的延长,Cu-CCTO陶瓷的I-V非线性系数由1.8增至3.37,但击穿电场强度却由1 500 V/cm降至约700 V/cm。随着保温时间的延长,Cu-CCTO陶瓷的势垒高度和耗尽层宽度均增加。