Calculations of the Elastic Scattering Properties of Ultra-cold Francium Isotopes

The calculations of the elastic scattering properties of ultra-cold francium isotopes are reported in detail. A parametric model potential for the triplet molecular states of the Fr₂ is represented, and the scattering lengths a_t and the effective range r_e are calculated using WKB and Numerov methods for Fr--Fr in the triplet state. The convergence of these scattering properties depending on a K⁰ parameter and core radius is also investigated using two methods: Quantum Defect Theory and analytical formula of Symskoviski.     

Synthesis and electrochemical,in situ spectroelectrochemical,electrical and gas sensing properties of ball-type homo- and hetero-dinuclear phthalocyanines with four [1a,8b-dihydronaphtho[b]naphthofuro[3,2-d]furan-7,10-diyl] bridges

The new mono-nuclear Fe^II 2 and ball-type homo-dinuclear Fe^II–Fe^II 3 phthalocyanines have been synthesized from the corresponding 4,4′-(1a,8b-dihydronaphtho[b]naphthofuro[3,2-d]-furan-7,10-diyl)bis(oxy)diphthalonitrile 1 while ball-type hetero-dinuclear Fe^II–Co^II phthalocyanine 4 was synthesized from 2. The compounds have been characterized by elemental analysis, UV–vis, IR and MALDI-TOF-mass spectroscopies. The redox behaviours of the complexes were identified by controlled-potential coulometry, cyclic voltammetry and differential pulse voltammetry measurements on Pt in dimethylsulfoxide containing tetrabutylammonium perchlorate. The assignments of the redox processes and the understanding of the interactions between the metal phthalocyanine units in 3 and 4 were achieved by the combined evaluation of the voltammetric and in situ spectroelectrochemical outcomes. Complex 3 showed ring-based mixed-valence behaviour as a result of the considerable interaction between the phthalocyanine rings. On the other hand, the interactions between the two metal phthalocyanine units of 4 were found to be much weaker than those in 3. The potential application of molecular organic semiconductors needs the control adjustment of conductivity. Ac and dc conductivity measurements were performed with the applied external electric filed. At high frequency, the conduction follows the universal power law and conduction mechanism can be explained by classical hopping barriers mechanism for the system.     

CVD-based tungsten carbide schottky contacts to 6H-SiC for very high-temperature operation

In this study, tungsten carbide, with its hardness, chemical inertness, thermal stability and low resistivity (25 μΩ cm)¹ is shown as a reliable contact material to n- and p-type 6H-SiC for very high temperature applications. WC films with thicknesses of 100–150 nm were deposited by chemical vapor deposition (CVD) from a WF₆/C₃H₈/H₂ mixture at 1173 K. A method to pattern CVD-tungsten carbide is suggested. TEM analysis of as deposited samples displayed a clear and unreacted interface. The electrical investigations of the p-type 6H-SiC Schottky contacts revealed a high rectification ratio and a low reverse current density (6.1 × 10⁻⁵ A cm⁻², −10 V) up to 773 K. On n-type, a low barrier (Φ_Bn=0.79 eV) at room temperature was observed. The low Φ_Bn value suggests WC to be promising as an ohmic contact material on highly doped n-type epi-layers. We will show a temperature dependence for the barrier height of tungsten carbide contacts that can be related to the simultaneous change in the energy bandgap, which should be considered when designing SiC devices intended for high temperature operation.     

Influence of dry and wet cleaning on the properties of rapid thermal grown and deposited gate dielectrics

Various silicon surface cleaning processes for rapid thermal in-situ polysilicon/ oxide/silicon stacked gate structures have been evaluated. Metal-oxide-semiconductor capacitors were fabricated to assess the effects of cleaning on the quality of gate oxide structures produced by both rapid thermal oxidation (RTO) and rapid thermal chemical vapor deposition (RTCVD). Excellent electrical properties have been achieved for both RTO and RTCVD gate oxides formed on silicon wafers using either an ultraviole/zone (UV/O₃) treatment or a modified RCA clean. On the contrary, poor electrical properties have been observed for RTO and RTCVD gate oxides formed on silicon wafers using a high temperature bake in Ar, H₂, or high vacuum ambient. It has also been found that the electrical properties of the RTCVD gate oxides exhibit less dependence upon cleaning conditions than those of RTO gate oxides. This work demonstrates that initial surface condition prior to gate oxide formation plays an important role in determining the quality of RTO and RTCVD gate oxides.     

Formation of titanium and cobalt germanides on Si (100) using rapid thermal processing

Titanium and cobalt germanides have been formed on Si (100) substrates using rapid thermal processing. Germanium was deposited by rapid thermal chemical vapor deposition prior to metal evaporation. Solid phase reactions were then performed using rapid thermal annealing in either Ar or N₂ ambients. Germanide formation has been found to occur in a manner similar to the formation of corresponding silicides. The sheet resistance was found to be dependent on annealing ambient (Ar or N₂) for titanium germanide formation, but not for cobalt germanide formation. The resistivities of titanium and cobalt germanides were found to be 20 μΩ-cm and 35.3μΩ-cm, corresponding to TiGe₂ and Co₂Ge, respectively. During solid phase reactions of Ti with Ge, we have found that the Ti₆Ge₅ phase forms prior to TiGe₂. The TiGe₂ phase was found to form approximately at 800° C. Cobalt germanide formation was found to occur at relatively low temperatures (425° C); however, the stability of the material is poor at elevated temperatures.     

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Codierte Modulation in modernen Übertragungssystemen

Modern communication systems offer high speed and reliable data transmission services. The quality of these services is achieved by combining coded multi-level modulation techniques and modern digital signal processing (Viterbi-decoding) in the receiver. In this paper we first present an introduction to Trellis Coded Modulation (TCM) and then some new results on unversal techniques adapted for the AWGN-channel as well as for the fading channel. It is shown that TCM is well suited for communication channels with time variant characteristics (e.g. mobile communication channels), especially when our new codes are applied.