Epoxidation of high trans‐1,4‐polyisoprene and its properties

A new organic‐solvent‐free water‐phase suspension method was used to synthesize partially epoxidized high trans‐1,4‐polyisoprene (TPI) to improve its properties, including oil resistance and wet‐skid resistance. The epoxidation was conducted in an aqueous peracetic acid solution and on the TPI granules prepared by a bulk precipitation method with supported titanium catalyst. The effects of the synthesis conditions, including reaction temperature, reaction time, and pH value, on the epoxy content were investigated. Epoxidized trans‐1,4‐polyisoprene (ETPI) with epoxy contents between 10 and 80% were obtained within 4 h. Both the amorphous and crystalline regions of TPI were epoxidized. The crystallization properties decreased with increasing epoxy content. ETPIs possessed lower mechanical properties than TPI but could be enhanced by vulcanization. The oil resistance and wet‐skid resistance were significantly improved after epoxidation. © 2007 Wiley Periodicals, Inc. J Appl Polym Sci, 2008     

Dual band-notched ultra-wideband microstrip antenna using asymmetrical spurlines

A simple and novel ultra-wideband microstrip-fed antenna with dual band-notched characteristic is presented. By etching a pair of asymmetrical spurlines on the feedline, two notched bands of 600 MHz (3.95? 4.55 GHz) and 650 MHz (5.35?6.0 GHz) are achieved. Measured results show that this antenna operates from 2.5 to 12.0 GHz for voltage standing wave ratio less than 2, except two frequency notched bands of 3.95?4.55 GHz and 5.35?6.0 GHz. Moreover, this antenna has good omnidirectional radiation patterns in the H-plane.     

北京谱仪Ⅱ（BESⅡ）顶点探测器数据获取系统

北京谱仪（ＢＥＳⅡ）顶点探测器数据获取系统是北京谱仪数据获取系统的一部分，该子系统电子学采用快总线标准，本文描述了该系统的硬件结构和软件系统，软件包括快总线系统的微码软件和上层控制软件，该系统的死时间为１．５ｎｓ，对ＢＥＳⅡ系统总死时间的贡献小于０．５ｍｓ。     

3^n阶矩阵乘法的分块算法

针对３＾ｎ阶矩阵的乘法运行，给出了一种分块算法，其乘法运行量比常规的矩阵乘法计算方法和补零的基－２算法都有所减少。     

含油废水处理

在水量水质调查的基础上，本文提出了以出水回用为目的的含油废水隔油调节沉淀－混凝沉淀－砂滤处理工艺，动态模型试验表明，废水中油和ＣＯＤ的去除率分别达到９５％和９０％，出水浊度低于２，此水质完全可回用于有关生产车间。     

InGaAs（P）分别限制应变单量子阱激光器的优化设计

针对较常用的ＩｎＧａＡｓ（Ｐ）分别限制应变单量子阱激光器，给出了为得到最大净增益的优化设计参数。对于激射波长为１．５５μｍ的无应变激光器，最佳的光限制层波长为１．２４μｍ，厚度为１００ｎｍ。当阱材料引入压缩应变后．由于价带的有效状态密度减小，量子阱激光器的微分增益变大，阱深的增大对增大线性增益的效果更加明显．所以最佳光限制层的波长将变短，为１．２０μｍ