Enhanced electron emission from phosphorus-doped diamond-cladsilicon field emitter arrays

Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function. Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones. After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities     

Exact evaluation of laser linewidth requirements for optical PSKhomodyne communication systems with balanced PLL receivers

The power penalty induced by imperfect phase recovery in PSK homodyne communication systems with balanced phase-locked loop receivers are exactly evaluated. Optimum phase deviations between the mark-state and the space-state bits are used in this study. This study for the first time shows the imperfect-phase-recovery-induced power penalty as a function of laser linewidth with optimum phase deviations considered. It can be estimated from the theoretical result that an optimal balanced PLL receiver requires the laser linewidth as Δν⩽1.15×10^-6× (bit rate) in contrast to the previous reported one Δν⩽5.88×10^-6× (bit rate). We also point out here that the previously reported laser linewidth requirement was wrongly estimated     

Modeling Power Supply Noise in Delay Testing

Excessive power supply noise during test can cause overkill. This article discusses two models for supply noise in delay testing and their application to test compaction. The proposed noise models avoid complicated power network analysis, making them much faster than existing power noise analysis tools. can cause performance degradation and     

Guest Editors' Introduction: Attacking Functional Verification through Hybrid Techniques

Hybrid techniques are effective for exploring interesting corner cases, coverage holes, invariant variations, and so forth, in the general area of directed functional validation. However, despite the emergence of several effective hybrid validation techniques, several questions still remain. The five articles in this special issue help explain some of the different facets of this area.     

High-temperature sensible-heat storage options

Alkali-metal carbonate salts meet the requirements for high-temperature solar central receiver systems, but because of their corrosiveness they present special problems in the design of storage tanks. In order to reduce corrosion and temperature sufficiently to retain strength in the storage containing wall, internal and thermal insulation is required. We present design options and operation criteria for sensible-heat, molten-salt storage with internal insulation.     

Integrated magnetic full wave converter with flexible output inductor

A new integrated magnetic full wave DC/DC power converter that provides flexible transformer design by incorporating an independent output inductor winding is introduced. The transformer is implemented on a traditional three-leg magnetic core. The inductor winding can be separately designed to control the output current ripple. The cross-sectional area of the inductor core leg can be reduced dramatically. The operation and performance of the proposed circuit are verified on a 100 W prototype converter.     

Effect of exponentially graded base doping on the performance ofGaAs/AlGaAs heterojunction bipolar transistors

The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×10¹⁹ cm^-3 at the emitter edge to 5×10¹⁸ cm^-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×10¹⁹ cm^-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40%