An isolated ZVS/ZCS flyback converter using the leakage inductanceof the coupled inductor

This paper describes a simple and effective way to modify an existing hard-switched flyback power converter into a circuit with zero-voltage switching (ZVS) and zero-current switching (ZCS). The key improvement is to turn the unattractive features of the coupled inductor leakage inductance and snubber capacitor into attractive ones. The coupled inductor leakage inductance and snubber are used to form a quasi-resonant circuit to facilitate ZVS/ZCS of all power devices. The operating principles of the power converter and experimental results are presented     

Is layering, harmful? [remote procedure call]

Remote procedure call (RPC) mechanisms over the US Department of Defense transmission control protocol. (TCP) can produce behavior analogous to the silly window syndrome because of a mismatched interface between the socket and the TCP modules. The detection and diagnosis of the problem are addressed. Some pointers to a design approach that could avoid the problems of mismatched communication layers are provided     

A recurrent neural network for solving a class of general variational inequalities.

This paper presents a recurrent neural-network model for solving a special class of general variational inequalities (GVIs), which includes classical VIs as special cases. It is proved that the proposed neural network (NN) for solving this class of GVIs can be globally convergent, globally asymptotically stable, and globally exponentially stable under different conditions. The proposed NN can be viewed as a modified version of the general projection NN existing in the literature. Several numerical examples are provided to demonstrate the effectiveness and performance of the proposed NN.     

High-breakdown-voltage AlSbAs/InAs n-channel field-effecttransistors

InAs channel field-effect transistors of 1-μm gate length were grown by molecular beam epitaxy and observed to operate at channel electric fields (20 kV/cm) higher than previously demonstrated and several times greater than the threshold for impact ionization in bulk InAs. Voltage gains on the order of 10 were observed with transconductances as high as 414 mS/mm and output conductances as low as 33 mS/mm. These voltage gains are comparable to those of GaAs-based devices and are the highest observed for InAs channel devices. The results demonstrate the potential for practical room-temperature operation of InAs FETs     

一种可用于可调谐环行Ti：Al_2O_3激光器的宽带单向器

本文介绍一种宽带单向器的原理及设计。选用ＴＧＧ作磁旋光介质，旋光石英晶片作补偿片，所设计的色散补偿型宽带单向器预计可在７００～１０００ｎｍ波长范围内实现环行激光腔中的单向行波运行；将其应用在可调谐环行Ｔｉ：Ａｌ２Ｏ３激光器中，获得了良好的实验结果。