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71.
鄂尔多斯盆地东部奥陶系盐下储层预测 总被引:1,自引:0,他引:1
鄂尔多斯盆地奥陶系的膏盐岩沉积面积达5×104km2,天然气的勘探程度很低。为此,利用测井技术和地震反演技术对盐下储层进行了预测。首先,通过对盐下沉积特征的综合分析,对盐下储集层段的发育层位和主要储集岩类型进行了描述;然后,采用ELAN测井技术对盐下储层的物性进行了分析,认为盐下储层的物性在普遍较差的背景上存在相对发育的层段和区带;最后,利用全局优化多道地震反演技术,对岩下储层进行了预测,认为盐下存在的局部隆起是圈闭和储层发育的有利区带。 相似文献
72.
73.
An optimization model for placement of wavelength converters to minimize blocking probability in WDM networks 总被引:7,自引:0,他引:7
Suixiang Gao Xiaohua Jia Chuanhe Huang Ding-Zhu Du 《Lightwave Technology, Journal of》2003,21(3):684-694
The introduction of wavelength converters in wavelength division multiplexing (WDM) networks can reduce the blocking probabilities of calls. In this paper, we study the problem of placing a given number of converters in a general topology WDM network such that the overall system blocking probability is minimized. The original contributions of this work are the following: 1) formulation of success probability in a network as a polynomial function of the locations of converters; 2) proposal of an optimization model of the converter placement problem as the minimization of a polynomial function of 0-1 variables under a linear constraint, so that standard optimization tools can be employed to solve the problem; and 3) design of a search algorithm that can efficiently find the optimal solution to the converter placement problem. Experiments have been conducted to demonstrate the effectiveness of the proposed model and the efficiency of the algorithm. 相似文献
74.
75.
Dong-Soo Yoon Jae Sung Roh Sung-Man Lee Hong Koo Baik 《Journal of Electronic Materials》2003,32(8):890-898
The effect of a thin RuOx layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuOx/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si
contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuOx/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no
formation of a thin RuOx layer at the RuOx surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film
by pre-annealing leads to the formation of a thin RuOx layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity
of diffusion paths. In particular, the RuOx layer in a nonstoichiometric state is changed to the RuO2-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer.
Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the
RuOx/TiN/poly-Si/Si contact system. 相似文献
76.
77.
Ting Gang Zhu Uttiya Chowdhury Michael M. Wong Jonathan C. Denyszyn Russell D. Dupuis 《Journal of Electronic Materials》2002,31(5):406-410
In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky
rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers
grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5
V at 100 A/cm2 are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage
in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm2, and a forward-voltage drop of 3.5 V at a current density of 100 A/cm2. It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC
substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge
terminations in mesageometry GaN Schottky rectifiers has also been studied. 相似文献
78.
The purpose of this paper is to evaluate two methods of assessing the productivity and quality impact of Computer Aided Software Engineering (CASE) and Fourth Generation Language (4GL) technologies: (1) by the retrospective method; and (2) the cross-sectional method. Both methods involve the use of questionnaire surveys. Developers' perceptions depend on the context in which they are expressed and this includes expectations about the effectiveness of a given software product. Consequently, it is generally not reliable to base inferences about the relative merits of CASE and 4GLs on a cross-sectional comparison of two separate samples of users. The retrospective method that requires each respondent to directly compare different products is shown to be more reliable. However, there may be scope to employ cross-sectional comparisons of the findings from different samples where both sets of respondents use the same reference point for their judgements, and where numerical rather than verbal rating scales are used to measure perceptions. 相似文献
79.
一、SQL简介 如果说七十年代关系数据库还处于研制实验阶段,那么到了八十年代大量关系数据库商用产品的面市几乎占据了整个数据库市场,其中的原因在于它们使用了统一的语言界面,那就是,SQL成为了关系数据库的通用语言。 1974年.IBM公司San Jose研究实验室的D.D.Chamberlin在开发SEQUEL-XRM原型时提出了SE-QUEL(Structured English Query Language),1976年又修改成为SEQUEL/2.也就是目前的SQL(StructuredQuer Language)。SEQUEL/2主要成形于IBM的Sys-tem R原型中[2],并在原有基础上大加扩展,其后逐渐完善并最终成为一种完备的结构化数据库查询语言。 相似文献
80.
Jan van Eijck 《Formal Aspects of Computing》1994,6(1):766-787
Presuppositions of utterances are the pieces of information you convey with an utterance no matter whether your utterance is true or not. We first study presupposition in a very simple framework of updating propositional information, with examples of how presuppositions of complex propositional updates can be calculated. Next we move on to presuppositions and quantification, in the context of a dynamic version of predicate logic, suitably modified to allow for presupposition failure. In both the propositional and the quantificational case, presupposition failure can be viewed as error abortion of procedures. Thus, a dynamic assertion logic which describes the preconditions for error abortion is the suitable tool for analysing presupposition. 相似文献