HDPE/CB-GP复合材料体系电性质的研究

当HDPE含量46％（质量分数，以下同）、其它添加剂（如抗氧剂、阻燃剂、交联剂和润滑剂等辅助填料）的含量11％，两种导电填料石墨（GP）和碳黑（CB）的总含量为43％时，研究结果表明石墨含量的变化对HDPE/CB-GP复合材料室温电阻率、阴C强度和后NTC强度有显著的影响．HDPE/CB-GP复合材料中GP的含量〈8．6％时，样品的室温电阻率〈30Ω·m，PTC强度〉7、后NTC强度〈1．3；电阻率．温度曲线经过17次冷热循环后重现性好，复合材料具有实际应用价值；GP在复合材料中为层片状结构。     

APDT-00三极放电管全自动打印机的研制

介绍了新近研制的APTD - 0 0三极放电管全自动打印机的结构特点及整机设计的关键技术 ,阐述了自动上料机构、打印机构和控制电路的设计     

ISDN的现状和发展

９０年代将是ＩＳＤＮ和宽带ＩＳＤＮ迅速发展的年代，本文介绍了国外Ｎ－ＩＳＤＮ和Ｂ－ＩＳＤＮ的发展动向，并结合我国通信网的现状，对发展ＩＳＤＮ（Ｂ－ＩＳＤＮ）提出若干建议。     

Voigt线型的微分消卷积

通过频域内的近似处理得到了洛仑兹线型微分消卷积的实用算符。推广到高斯、洛仑兹线型的复合情形即Ｖｏｉｇｔ线型，亦可得到它的消卷积算符。把所得算符应用于单峰、多峰情形，对各种不同的组合形式，分别得到了消卷积谱，其分辨率提高因子Ｋ与复合线型中洛仑兹成分的多少有关。     

低相噪,低杂波数字锁相环路滤波器的设计

较详细地分析数字锁相频率合成器的相位噪声，着重用控制论方法对低相噪、低杂波锁相环的环路滤波器进行设计，并用某Ｓ波段频率合成器的实验结果进行了验证。     

Formation mechanism of bainitic ferrite and carbide

Superledges on the broad faces of bainitic ferrite plates have been observed with transmission electron microscope (TEM). The observed superledges, ranging from less than 1 to 24 nm in height, are imaged in three dimension by way of tilt operation under TEM. Also, an array of smaller superledges are observed to pile up in front of a secondary phase. Pileup of superledges in front of a barrier is indicative of the mobility of an individual superledge. The precipitation of carbide associated with bainitic ferrite is also studied. It is observed that a carbide of a wedgelike shape may exist in front of a superledge with its tip(i.e., thinner end) penetrating the austenite and its root (the other end) originating at α:γ boundary. This condition indicates that the observed carbides may nucleate at the austenite side of α:γ phase boundary and grow toward austenite matrix. This article is based on a presentation made at the Pacific Rim Conference on the “Roles of Shear and Diffusion in the Formation of Plate-Shaped Transformation Products,” held December 18-22, 1992, in Kona, Hawaii, under the auspices of ASM INTERNATIONAL’S Phase Transformations Committee.     

New efficient designs for XOR and XNOR functions on the transistorlevel

Two new methods are proposed to implement the exclusive-OR and exclusive-NOR functions on the transistor level. The first method uses non-complementary signal inputs and the least number of transistors. The other one improves the performance of the prior method but two more transistors are utilized. Both of them have been fully simulated by HSPICE on a SUN SPARC 2 workstation     

职工持股计划在中国:理论上可行,实践上慎行

在对中美两国的职工持股计划进行分析后,本文认为职工持股计划在中国,理论上可行,但在实践中 需要谨慎行事。