Analysis of the mechanism of die soldering in aluminum die casting

A mechanism of soldering of an aluminum alloy die casting to a steel die is proposed. A soldering critical temperature is postulated, at which iron begins to react with aluminum to form an aluminum-rich liquid phase and solid intermetallic compounds. The liquid joins the die with the casting upon solidification. The critical temperature is determined by the elements in both the casting alloy and the die material and is equal to the solidus temperature of the resulting alloy. The critical temperature is used to predict the onset of die soldering, and the local liquid fraction is related to the soldering tendency. Experiments have been carried out to validate the concept and to determine the critical temperature for die soldering in an iron-aluminum system. Thermodynamic calculations are used to determine the critical temperature and soldering tendency for the cases of pure aluminum and a 380 alloy in a steel mold. Factors affecting the soldering tendency are discussed, and methods for reducing die soldering are suggested.     

DST在塔河油田碳酸岩油藏的应用

塔河油田碳酸岩油藏是定容体油藏,若发育的裂缝、溶洞延伸不远,定容体的规模较小,则无开采价值,因此有必要判断钻遇的储集体规模大小.小定容体最显著的特征就是天然能量消耗和地层压力下降明显,DST测试是判断定容体油藏的好方法.由于常规测试受岩性、裂缝产状、泥浆侵入、含液性、地层各向异性等因素的不确定影响,使得常规测试储层响应特征具有多重性,只能初步判断裂缝溶洞的发育带,因此可以利用DST测试技术了解显示层段产液性质和产能,判断油气水层.     

下一代无线通信概念和技术

下一代无线通信(NextG:Next-generationwireless)的主流是随时随地的无线通信系统和无缝的高质量无线业务。概述了随时随地的无线通信和业务发展情况,并且介绍了为下一代无线通信的发展提供基础的关键技术。     

SCB火工品的研究与发展

文章评述了半导体桥火工品问世以来的研究成果与发展趋势。主要内容有半导体桥作用机理、半导体桥的结构与封装、半导体桥火工品的特点、半导体桥火工品的应用、半导体桥火工品的研究和发展趋势。     

石油沥青60℃动力粘度测定影响因素的探讨

粘度是表征沥青稠度的一个重要指标。通过论述石油沥青粘度测定法(真空毛细管法)中毛细管的选择、温度、真空度、取样量等对试验结果的影响及试验过程中的其它注意事项,表明了在测定石油沥青的60℃动力粘度时,必须严格按照试验方法的要求进行测定,以保证试验结果的准确性。     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

固液分离水力旋流除砂器的数值模拟

利用CFD软件,采用雷诺应力模型分别计算了300型和250型水力旋流除砂器的内流场,得到了2种水力旋流除砂器的轴向、径向、切向速度及压强的分布曲线。通过对所得结果的分析,发现模拟结果基本符合旋流除砂器的运行规律。比较2种旋流除砂器的内流场,表明改进的300型水力旋流除砂器的结构及分离能力优于原来250型水力旋流除砂器,为水力旋流除砂器的优化设计和选型提供了可靠的设计依据。     

Finite element piezothermoelasticity analysis and the active control of FGM plates with integrated piezoelectric sensors and actuators

 An efficient finite element model is presented for the static and dynamic piezothermoelastic analysis and control of FGM plates under temperature gradient environments using integrated piezoelectric sensor/actuator layers. The properties of an FGM plate are functionally graded in the thickness direction according to a volume fraction power law distribution. A constant displacement-cum-velocity feedback control algorithm that couples the direct and inverse piezoelectric effects is applied to provide active feedback control of the integrated FGM plate in a closed loop system. Numerical results for the static and dynamic control are presented for the FGM plate, which consists of zirconia and aluminum. The effects of the constituent volume fractions and the influence of feedback control gain on the static and dynamic responses of the FGM plates are examined. Received: 13 March 2002 / Accepted: 5 March 2003 The work described in this paper was supported by a grant awarded by the Research Grants Council of the Hong Kong Special Administrative Region, China (Project No. CityU 1024/01E).     

Verbal Representation and Therapeutic Change in Anaclitic and Introjective Inpatients.

This study examined the relation between changes in clinical functioning and changes in verbal expression in 81 seriously disturbed and treatment-resistant young adults seen in a comprehensive, psychoanalytically oriented inpatient treatment. Clinical functioning was evaluated with a battery of clinical and social measures. Verbal representations were assessed using computer-assisted scoring of Thematic Apperception Test responses. Changes in the frequency of verbal content and style in the narratives of these patients covaried with changes in clinical functioning. Significantly different covariations of verbal and clinical change, particularly differences in covariates of referential activity, were found for patients with anaclitic versus introjective personality configurations. The implications of these findings for understanding and treating severe psychopathology are discussed. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-/spl mu/m-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V/sub pp/ differential output swing, a distributed 40-Gb/s driver amplifier with 6-V/sub pp/ differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.