General-purpose high-speed integrated lock-in amplifier with 30 dB dynamic reserve at 20 MHz

We present the design of a general-purpose high-speed integrated lock-in amplifier (LIA). The LIA measures the amplitude and phase of the input signal with frequencies from 15 to 20 MHz at SNR as low as ?30 dB. The magnitude measurement circuitry relies on the band-pass filter and current integrator to extract the signal amplitude. The phase measurement circuitry relies on the phase-locked loop to extract the phase difference between the input signal and the reference signal. The designed LIA is fabricated in TSMC 0.18 μm technology. The LIA consumes 37 mW of power. The output signal dynamic range is 300 mV for 600 mV input signal variation, and therefore the output-to-input sensitivity is approximately 0.5 V/V.     

一种新型的左右手传输线超宽带滤波器

超宽带系统需要超宽带滤波器的相对带宽达到110%,并且使用常见的材料设计它,使其结构紧凑、价格便宜。该文将介绍用左右手传输线结构设计的新型超宽带滤波器。另外,利用微带线和共面波导相结合的方式来简化设计、缩小尺寸。其仿真结果证明了利用复合材料可产生负介电常数和负磁导率,滤波器在通带3.8到10.6GHz内的插入损耗小于1.0db。并且其中心频带附近的群时延约为0.20ns,这个群时延足够小,以至于它可以应用到无线通信系统中。     

下一代PON技术的发展

结合FSAN/ITU-T标准组织的权威观点,介绍了下一代PON系统的演进原则和演进路线;着重阐述了当前NG-PON1和NG-PON2的各种热点候选技术。     

IC卡式家用电度表设计

以单片机为核心,设计出IC卡式家用电度表,实现了预收费、报警、显示、断电和防作弊等功能。论文从硬件电路和软件设计两方面进行论述,并提出电度表的网络化管理思路。     

双基区大功率快恢复二极管的研究

提出了在采用VB=94ρ0n.7数学模型设计双基区p+pinn+结构快速软恢复FRD大功率二极管结构参数中引入η=Wi/Xm=0.25数学模型的方法。采用Si片扩铂和电子辐照共同控制基区少子寿命及分布,并利用该设计方法对ZKR1 000 A/2 600 V结构参数进行了优化设计。对设计参数进行了实验验证,结果表明,器件参数满足设计指标,达到国外同类产品水平。说明该设计方法及各种参数的选取是正确的,寿命控制技术是有效的。为p+pinn+结构二极管设计与制造提供了一种具有重要的指导意义和参考价值的新方法。     

侧墙技术在相变存储器中的应用

从相变存储器(phase change random access memory,PCRAM)的基本结构和工作原理出发,首先介绍了PCRAM的技术优势、面临的技术挑战、常用的解决策略以及存在的相应问题;接着阐述了在微电子加工中广泛应用的关键工艺——侧墙技术,并将其在PCRAM中的应用成果进行了分类;然后从加热电极的制备、相变材料限制结构的制备、新相变材料的制备与表征和器件间互联等4个方面展开叙述;最后展望了该技术在相变存储领域应用发展的趋势。侧墙技术因其具备自对准的特点,制备工艺可控性好,制备精度不依赖于光刻精度,在纳米技术飞速发展的今天,侧墙技术将会在更高精度上发挥其作用。     

Doping Effects on Thermoelectric Properties in the Mg2Sn System

A weak point of Mg₂X thermoelectrics is the absence of a p-type composition, which motivates research into the Mg₂Sn system. Mg₂Sn thermoelectrics were fabricated by a vacuum melting method and a spark plasma sintering process. As a result, Mg₂Sn single phases were acquired in a wide range of Mg-to-Sn atomic ratios (67:33 to 71:29), showing slightly different thermoelectric characteristics. However, the thermoelectric properties of the undoped system were not sufficient for application in commercial production. To maximize the p-type characteristics, many atoms [Ni (VIIIA), Cu (IB), Ag (IB), Zn (IIB), and In (IIIB)] were doped into the Mg₂Sn phase. Among them, the power factor values increased only in the Ag-doped case. Ag-doping resulted in a power factor that was more than 10 times larger than the value in the undoped case. This result could be important for developing p-type polycrystalline thermoelectrics in the Mg₂X (X?=?Si, Sn) system. However, other atoms [Ni (VIIIA), Cu (IB), Zn (IIB), and In (IIIB)] were not determined to act as acceptor atoms. The maximum ZT value for the Ag-doped Mg₂Sn thermoelectric was more than 0.18, which is comparable to the value for the n-type Mg₂Si system.     

非线性负折射率材料表面TE电磁波的空间稳定特性分析

针对电磁波在正负非线性材料界面处的传播,研究了两种稳定状态下电磁波的物理特性。理论分析和数值计算表明,该界面处电磁波的传播存在着频率通带,且带宽仅与两种材料的固有属性有关。得出前向表面波和后向表面波均可以在这种非线性导波系统中传播,并且在一定条件下,随着频率的变化,前向表面波和后向表面波可以在两种材料中跃变。推论出两种稳定传播的电磁波场峰值位置随传播功率的变化也能实现在两种材料中跃变,并逐渐向界面靠近,而传播功率较大的稳定态电场峰值几乎靠着界面。     

CISPR15 A1:2006对灯具电磁骚扰测试新增的要求

本文介绍了灯具电磁骚扰测试标准CISPR15对灯具辐射电磁场骚扰的新要求.同时也介绍了相应的实验室的应对策略.